FR2217805A1 - Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer - Google Patents

Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer

Info

Publication number
FR2217805A1
FR2217805A1 FR7305050A FR7305050A FR2217805A1 FR 2217805 A1 FR2217805 A1 FR 2217805A1 FR 7305050 A FR7305050 A FR 7305050A FR 7305050 A FR7305050 A FR 7305050A FR 2217805 A1 FR2217805 A1 FR 2217805A1
Authority
FR
France
Prior art keywords
arsenide layer
gallium
infrared radiation
substrate
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7305050A
Other languages
French (fr)
Other versions
FR2217805B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR7305050A priority Critical patent/FR2217805A1/en
Priority to DE19742405611 priority patent/DE2405611A1/en
Priority to JP1591274A priority patent/JPS49114869A/ja
Publication of FR2217805A1 publication Critical patent/FR2217805A1/en
Application granted granted Critical
Publication of FR2217805B1 publication Critical patent/FR2217805B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

Photocathode for near-infrared radiation comprises a relatively thick substrate (10-500 mu) having the general formula Ga1-yAlyAs (0.4 y 1) and a thin layer 0.5-10 mu) epitaxially grown on the substrate consisting of a p-doped cpd. having the formula Ga1-xInxAs (0 x 0.5), which is pref. coated with a mono-atomic layer of an alkali metal or its cpd. to facilitate electron emission. The substrate is sufficiently thick to ensure mechanical strength. On the other hand, the substrate transmits a considerable part of photons falling thereon so that a sufficiently copious electron emission takes place.
FR7305050A 1973-02-13 1973-02-13 Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer Granted FR2217805A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7305050A FR2217805A1 (en) 1973-02-13 1973-02-13 Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
DE19742405611 DE2405611A1 (en) 1973-02-13 1974-02-06 TRANSPARENT SEMI-CONDUCTOR PHOTOCATHOD FOR RADIATION IN THE NEAR INFRARED RANGE AND PROCESS FOR PRODUCING SUCH A CATHOD
JP1591274A JPS49114869A (en) 1973-02-13 1974-02-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7305050A FR2217805A1 (en) 1973-02-13 1973-02-13 Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer

Publications (2)

Publication Number Publication Date
FR2217805A1 true FR2217805A1 (en) 1974-09-06
FR2217805B1 FR2217805B1 (en) 1979-01-26

Family

ID=9114768

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7305050A Granted FR2217805A1 (en) 1973-02-13 1973-02-13 Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer

Country Status (3)

Country Link
JP (1) JPS49114869A (en)
DE (1) DE2405611A1 (en)
FR (1) FR2217805A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4352117A (en) * 1980-06-02 1982-09-28 International Business Machines Corporation Electron source
JPH0371528A (en) * 1989-08-10 1991-03-27 Hamamatsu Photonics Kk Semiconductor photoelectric surface structure
JPH1196896A (en) * 1997-09-24 1999-04-09 Hamamatsu Photonics Kk Semiconductor photoelectric surface

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1239893A (en) * 1970-03-05 1971-07-21 Standard Telephones Cables Ltd Improvements in or relating to photocathodes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1239893A (en) * 1970-03-05 1971-07-21 Standard Telephones Cables Ltd Improvements in or relating to photocathodes

Also Published As

Publication number Publication date
FR2217805B1 (en) 1979-01-26
JPS49114869A (en) 1974-11-01
DE2405611A1 (en) 1974-08-15

Similar Documents

Publication Publication Date Title
GB1417187A (en) Electron gun
GB1299549A (en) Aiii-bv cathodes having a built-in gradient of potential energy for increasing the emission efficiency
FR2217805A1 (en) Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
GB1242660A (en) Improvements in or relating to luminescence diodes
GB1323620A (en) Shadow masks for use in colour picture tubes
CA937977A (en) Field emitting cathode with plural emitters
GB1453965A (en) Electron-emissive cathodes
EP0259878A3 (en) Electron emission element
GB1239893A (en) Improvements in or relating to photocathodes
FR2326031A1 (en) Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer
GB1476471A (en) Gallium arsenide photocathodes
FR2325175A1 (en) Monocrystalline photocathode operating with transmitted light - has conversion layer absorbing photons to generate free electrons
FR2284185A1 (en) Alkali metal-antimony electro-optical emission layer - for X-ray intensifier with low antimony content, giving high quantum yield
GB1427209A (en) Lattice matched heterojunction devices
GB666520A (en) Improvements in or relating to cathode ray tube envelopes
JAMES III-V photocathode with nitrogen doping for increased quantum efficiency[Patent]
JPS5210878A (en) Luminous compositions
ES431351A1 (en) Camera tube having a target with heterojunction
JPS51137370A (en) Electron line detector
LONGAIR et al. The diffusion of relativistic electrons from infra-red sources and their X-ray emission(Model for relativistic electrons diffusion from IR sources, determining injected electron spectrum distortion due to inverse Compton losses and X ray spectrum)
JPS5329090A (en) Semiconductor photo coupler
Baltramiejunas et al. Edge luminescence of epitaxial(single-crystal layers) CdSe at a high level of excitation
GB1441744A (en) Photocathodes
GB1475597A (en) Electron emissive materials and methods of preparation
KONIAKHINA et al. The excess radiation at heights of 200-500 km(Hypotheses for excess background radiation at 200-500 km, suggesting single high energy electrons or electron clusters)

Legal Events

Date Code Title Description
ST Notification of lapse