GB1476471A - Gallium arsenide photocathodes - Google Patents
Gallium arsenide photocathodesInfo
- Publication number
- GB1476471A GB1476471A GB326374A GB326374A GB1476471A GB 1476471 A GB1476471 A GB 1476471A GB 326374 A GB326374 A GB 326374A GB 326374 A GB326374 A GB 326374A GB 1476471 A GB1476471 A GB 1476471A
- Authority
- GB
- United Kingdom
- Prior art keywords
- glass
- substrate
- jan
- cathode
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
1476471 Photocathodes STAXDABD TELEPHONES & CABLES Ltd 16 Jan 1975 [24 Jan 1974] 03263/74 Heading H1D [Also in Division B3] A transmission type photocathode comprises an active GaAs layer 3 and a GaAlAs layer 4 bonded with solder glass 5 (see Division C1) to a spinel or sapphire substrate 6. The cathode is prepared by growing on a P-type GaAs substrate 2, blocking P-type GaAs layer 1, and layers 3, 4. The outer surfaces are then passivated with pyrolytic SiO 2 . The spinel substrate 6 is coated with glass 5 outgassed and lapped. The assembly 1 ... 4 is pressed against the glass and heated with the glass softens. Layers 1, 2 are removed by electrochemical and non-selective bubble etching as described in Specification 1,448,600. The cathode is activated with Cs.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB326374A GB1476471A (en) | 1975-01-16 | 1975-01-16 | Gallium arsenide photocathodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB326374A GB1476471A (en) | 1975-01-16 | 1975-01-16 | Gallium arsenide photocathodes |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1476471A true GB1476471A (en) | 1977-06-16 |
Family
ID=9755039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB326374A Expired GB1476471A (en) | 1975-01-16 | 1975-01-16 | Gallium arsenide photocathodes |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1476471A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0041119A1 (en) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Cold electron emission device |
FR2515870A1 (en) * | 1981-11-04 | 1983-05-06 | Labo Electronique Physique | PHOTOCATHODE FOR ELECTRONIC TUBE ENTRY COMPRISING A SEMICONDUCTOR DEVICE WITH TRANSMISSION PHOTO-EMISSION |
FR2553934A1 (en) * | 1983-10-19 | 1985-04-26 | Labo Electronique Physique | SEMICONDUCTOR STRUCTURE-VITREOUS SUPPORT AND DEVICES PRODUCED WITH SUCH A STRUCTURE |
GB2244853A (en) * | 1985-12-31 | 1991-12-11 | Int Standard Electric Corp | Method of making photocathodes for image intensifier tubes |
-
1975
- 1975-01-16 GB GB326374A patent/GB1476471A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0041119A1 (en) * | 1980-06-02 | 1981-12-09 | International Business Machines Corporation | Cold electron emission device |
FR2515870A1 (en) * | 1981-11-04 | 1983-05-06 | Labo Electronique Physique | PHOTOCATHODE FOR ELECTRONIC TUBE ENTRY COMPRISING A SEMICONDUCTOR DEVICE WITH TRANSMISSION PHOTO-EMISSION |
EP0078583A1 (en) * | 1981-11-04 | 1983-05-11 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Input photo cathode for an electronic tube comprising a semiconductor device as transmitting photo emitter |
FR2553934A1 (en) * | 1983-10-19 | 1985-04-26 | Labo Electronique Physique | SEMICONDUCTOR STRUCTURE-VITREOUS SUPPORT AND DEVICES PRODUCED WITH SUCH A STRUCTURE |
EP0139334A2 (en) * | 1983-10-19 | 1985-05-02 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Semiconductor-glass support structure and devices provided with such a structure |
EP0139334A3 (en) * | 1983-10-19 | 1985-06-19 | Laboratoires D'electronique Et De Physique Appliquee L.E.P. | Semiconductor-glass support structure and devices provided with such a structure |
GB2244853A (en) * | 1985-12-31 | 1991-12-11 | Int Standard Electric Corp | Method of making photocathodes for image intensifier tubes |
GB2244853B (en) * | 1985-12-31 | 1992-03-18 | Int Standard Electric Corp | Method of making photocathodes for image intensifier tubes |
US5298831A (en) * | 1985-12-31 | 1994-03-29 | Itt Corporation | Method of making photocathodes for image intensifier tubes |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |