FR2326031A1 - Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer - Google Patents

Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer

Info

Publication number
FR2326031A1
FR2326031A1 FR7529608A FR7529608A FR2326031A1 FR 2326031 A1 FR2326031 A1 FR 2326031A1 FR 7529608 A FR7529608 A FR 7529608A FR 7529608 A FR7529608 A FR 7529608A FR 2326031 A1 FR2326031 A1 FR 2326031A1
Authority
FR
France
Prior art keywords
layer
substrate
conversion layer
thin film
transmission operation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7529608A
Other languages
French (fr)
Other versions
FR2326031B1 (en
Inventor
Yvan Raverdy
Henri Rougeot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7529608A priority Critical patent/FR2326031A1/en
Priority to DE19762642687 priority patent/DE2642687A1/en
Priority to JP11376676A priority patent/JPS5242360A/en
Publication of FR2326031A1 publication Critical patent/FR2326031A1/en
Application granted granted Critical
Publication of FR2326031B1 publication Critical patent/FR2326031B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

The assembly has a monocrystalline conversion layer (2) in which the impinging photons are absorbed, to produce free electrons, an activation layer (4) on this, to give the photocathode negative electron affinity, an amorphous transparent support (5) for layer (2), and an annularnlayer (1) around layer (2) on the side coated with layer (4) and consisting of the substrate from which layer (2) is produced by epitaxy. This construction overcomes restriction on the choice of materials due to the need to match the thermal characteristics of the (glass) substrate and the other parts. The ring provides the required stiffness. The (glass) substrate and (GaAs) conversion layer have the same coeff.of expansion and the support metals above the temp. at which the (Cs +Cs2O) activivation layer is applied. The ring can consist of GaAs, AlAs or GaAlAs.
FR7529608A 1975-09-26 1975-09-26 Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer Granted FR2326031A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7529608A FR2326031A1 (en) 1975-09-26 1975-09-26 Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer
DE19762642687 DE2642687A1 (en) 1975-09-26 1976-09-22 PHOTOCATODE
JP11376676A JPS5242360A (en) 1975-09-26 1976-09-24 Thin layer photoelectric cathode for image pickup tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7529608A FR2326031A1 (en) 1975-09-26 1975-09-26 Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer

Publications (2)

Publication Number Publication Date
FR2326031A1 true FR2326031A1 (en) 1977-04-22
FR2326031B1 FR2326031B1 (en) 1978-09-22

Family

ID=9160512

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7529608A Granted FR2326031A1 (en) 1975-09-26 1975-09-26 Thin film photocathode utilising transmission operation - has substrate reduced to stiffening ring around conversion layer

Country Status (3)

Country Link
JP (1) JPS5242360A (en)
DE (1) DE2642687A1 (en)
FR (1) FR2326031A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3242737A1 (en) * 1982-11-19 1984-05-24 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt METHOD FOR PRODUCING A SEMICONDUCTOR PHOTOCATHOD

Also Published As

Publication number Publication date
JPS5242360A (en) 1977-04-01
DE2642687A1 (en) 1977-03-31
FR2326031B1 (en) 1978-09-22

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Legal Events

Date Code Title Description
ST Notification of lapse