GB1427209A - Lattice matched heterojunction devices - Google Patents

Lattice matched heterojunction devices

Info

Publication number
GB1427209A
GB1427209A GB4441573A GB4441573A GB1427209A GB 1427209 A GB1427209 A GB 1427209A GB 4441573 A GB4441573 A GB 4441573A GB 4441573 A GB4441573 A GB 4441573A GB 1427209 A GB1427209 A GB 1427209A
Authority
GB
United Kingdom
Prior art keywords
lattice
matched
type
inp
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4441573A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of GB1427209A publication Critical patent/GB1427209A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H01J31/501—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output with an electrostatic electron optic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)

Abstract

1427209 Epitaxial growth VARIAN ASSOCIATES 21 Sept 1973 [22 Sept 1972] 44415/ 73 Heading B1S [Also in Division H1] A lattice-matched (within 0.5%) semiconductor heterojunction device is formed by epitaxial deposition, preferably from the liquid phase, or a quaternary InGaAsP alloy on an InP substrate. In Fig. 1 point 108 represents the composition of an InGaAsP alloy latticematched to InP. Conditions such as solution composition, temperature, cooling rate etc, for sliding boat liquid phase epitaxial deposition of such lattice-matched heterojunctions are disclosed. Fig. 7 shows a double heterojunction laser comprising successive lattice-matched layers of Sn, Ta or Sa doped n type InP 127, p type In GaAsP 128 and p type InP 131 on an n type Te doped InP substrate 126. Fig. 6 shows a photocathode 111 for an infrared image intensifier tube 112. The photocathode 111 comprises an n type InP substrate 113 provided with an anti-reflective coating 114 and having epitaxially deposited thereon from this liquid phase a lattice-matched layer 115 of InGaAsP. A low work-function casein oxide layer 116 is provided on the layer 115.
GB4441573A 1972-09-22 1973-09-21 Lattice matched heterojunction devices Expired GB1427209A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29145772A 1972-09-22 1972-09-22

Publications (1)

Publication Number Publication Date
GB1427209A true GB1427209A (en) 1976-03-10

Family

ID=23120368

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4441573A Expired GB1427209A (en) 1972-09-22 1973-09-21 Lattice matched heterojunction devices

Country Status (2)

Country Link
JP (1) JPS58208195A (en)
GB (1) GB1427209A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2418970A1 (en) * 1978-03-03 1979-09-28 Thomson Csf LASER DIODE WITH DISTRIBUTED RESONATOR
FR2532474A1 (en) * 1982-08-28 1984-03-02 Int Standard Electric Corp METHOD FOR OBTAINING LAYERS OF GAXIN1-XASYP1-Y FOR PHOTODETECTOR
EP0345086A1 (en) * 1988-06-03 1989-12-06 Varian Associates, Inc. Single crystal output screen
EP4376044A1 (en) * 2022-11-22 2024-05-29 L3Harris Technologies, Inc. Design of lattice matched photocathodes for extended wavelengths

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH068239B2 (en) * 1985-05-16 1994-02-02 株式会社トーキン Liquid phase epitaxial growth method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3218205A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of iii-v compounds
US3447976A (en) * 1966-06-17 1969-06-03 Westinghouse Electric Corp Formation of heterojunction devices by epitaxial growth from solution
JPS4921990B1 (en) * 1969-07-23 1974-06-05

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2418970A1 (en) * 1978-03-03 1979-09-28 Thomson Csf LASER DIODE WITH DISTRIBUTED RESONATOR
FR2532474A1 (en) * 1982-08-28 1984-03-02 Int Standard Electric Corp METHOD FOR OBTAINING LAYERS OF GAXIN1-XASYP1-Y FOR PHOTODETECTOR
GB2127219A (en) * 1982-08-28 1984-04-04 Int Standard Electric Corp Method of making gainasp layers for photodetectors
EP0345086A1 (en) * 1988-06-03 1989-12-06 Varian Associates, Inc. Single crystal output screen
US4929867A (en) * 1988-06-03 1990-05-29 Varian Associates, Inc. Two stage light converting vacuum tube
EP4376044A1 (en) * 2022-11-22 2024-05-29 L3Harris Technologies, Inc. Design of lattice matched photocathodes for extended wavelengths

Also Published As

Publication number Publication date
JPS58208195A (en) 1983-12-03
JPS6117797B2 (en) 1986-05-09

Similar Documents

Publication Publication Date Title
Cho Film deposition by molecular-beam techniques(Thin single crystalline film deposition by molecular beam epitaxy of GaAs, describing surface structure observation with high energy electron diffraction)
US4835579A (en) Semiconductor apparatus
GB1008408A (en) Improved superconductors and method for the preparation thereof
Lockwood et al. Thin solution multiple layer epitaxy
GB1452917A (en) Transmission photocathode device and method of making the same
GB1528192A (en) Surface treatment of iii-v compound crystals
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
GB1427209A (en) Lattice matched heterojunction devices
Clough et al. Vapor-phase growth of epitaxial GaAs sub 1-x Sb sub x alloys using arsine and stibine(Vapor phase growth of epitaxial single crystalline GaAs-GaSb alloys using arsine and stibine)
US3234057A (en) Semiconductor heterojunction device
Piotrowski A new method of obtaining Cd/x/Hg/1-x/Te thin films(Cadmium mercury telluride thin film coatings preparation by HgTe layers deposition onto previously vapor deposited CdTe layers under isothermal conditions)
JPS52115185A (en) Vapor phase growing apparatus
GB1228717A (en)
JPS5247377A (en) Method of inactivating surface of group iii-v compound semiconductor
GB1529853A (en) Transferred electron devices
JPS5346047A (en) Photo video transducer
JPH01194476A (en) Semiconductor photodetector
FEDOTOV et al. Epitaxial growth of GaAs and In/x/Ga/1-x/As from a metallic melt/Epitaksial'noe narashchivanie sloev GaAs i In/x/Ga/1-x/As iz metallicheskogo rasplava/(Epitaxial GaAs films growth from solid solutions of InAs-GaAs system deposited on GaAs substrates, noting electron mobility and temperature effect)
JPS5624928A (en) Electrode forming method of semiconductor
Valatska et al. Investigation of the Growth Rate of an Epitaxial Layer by Thermoelectric Recrystallization
Rogalski Pb sub 1--x Sn sub x Te Photovoltaic Detectors for the Range of Atmospheric Window 8-14 mu m Prepared by a Modified Hot-Wall Evaporation Technique
JPS54114089A (en) Hall element using gallium arsenide crystal
JPS5429570A (en) Manufacture for semiconductor element
FR2217805A1 (en) Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
VIELAND et al. High temperature superconductor NB 3 Ga(Chemical vapor deposition of stoichiometric niobium gallium superconducting film)

Legal Events

Date Code Title Description
PS Patent sealed
PLE Entries relating assignments, transmissions, licences in the register of patents
PCNP Patent ceased through non-payment of renewal fee