FR2418970A1 - LASER DIODE WITH DISTRIBUTED RESONATOR - Google Patents

LASER DIODE WITH DISTRIBUTED RESONATOR

Info

Publication number
FR2418970A1
FR2418970A1 FR7806099A FR7806099A FR2418970A1 FR 2418970 A1 FR2418970 A1 FR 2418970A1 FR 7806099 A FR7806099 A FR 7806099A FR 7806099 A FR7806099 A FR 7806099A FR 2418970 A1 FR2418970 A1 FR 2418970A1
Authority
FR
France
Prior art keywords
laser diode
distributed resonator
diode
resonator
distributed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7806099A
Other languages
French (fr)
Other versions
FR2418970B1 (en
Inventor
Pierre Hirtz
Baudoin De Cremoux
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7806099A priority Critical patent/FR2418970A1/en
Priority to GB7907280A priority patent/GB2015814B/en
Priority to DE19792908257 priority patent/DE2908257A1/en
Priority to JP2500379A priority patent/JPS5555596A/en
Publication of FR2418970A1 publication Critical patent/FR2418970A1/en
Application granted granted Critical
Publication of FR2418970B1 publication Critical patent/FR2418970B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/02—Constructional details
    • H01S3/04—Arrangements for thermal management
    • H01S3/042—Arrangements for thermal management for solid state lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention a pour objet une diode laser à résonateur distribué. La couche active de cette diode a une bande de conduction ou au moins des niveaux d'énergie plus bas que celles des couches épitaxiées dont elle est formée, et que celle de son substrat. Celui-ci est donc transparent à la longueur d'onde de la lumière émise. L'invention s'applique aux télécommunications optiques.The subject of the invention is a laser diode with a distributed resonator. The active layer of this diode has a conduction band or at least energy levels lower than those of the epitaxial layers from which it is formed, and than that of its substrate. This is therefore transparent to the wavelength of the light emitted. The invention applies to optical telecommunications.

FR7806099A 1978-03-03 1978-03-03 LASER DIODE WITH DISTRIBUTED RESONATOR Granted FR2418970A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR7806099A FR2418970A1 (en) 1978-03-03 1978-03-03 LASER DIODE WITH DISTRIBUTED RESONATOR
GB7907280A GB2015814B (en) 1978-03-03 1979-03-01 Laser diode having a distributed resonator
DE19792908257 DE2908257A1 (en) 1978-03-03 1979-03-02 LASER DIODE WITH DISTRIBUTED RESONATOR
JP2500379A JPS5555596A (en) 1978-03-03 1979-03-02 Laser diode having distribution resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7806099A FR2418970A1 (en) 1978-03-03 1978-03-03 LASER DIODE WITH DISTRIBUTED RESONATOR

Publications (2)

Publication Number Publication Date
FR2418970A1 true FR2418970A1 (en) 1979-09-28
FR2418970B1 FR2418970B1 (en) 1981-12-31

Family

ID=9205300

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7806099A Granted FR2418970A1 (en) 1978-03-03 1978-03-03 LASER DIODE WITH DISTRIBUTED RESONATOR

Country Status (4)

Country Link
JP (1) JPS5555596A (en)
DE (1) DE2908257A1 (en)
FR (1) FR2418970A1 (en)
GB (1) GB2015814B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1427209A (en) * 1972-09-22 1976-03-10 Varian Associates Lattice matched heterojunction devices
FR2282731A1 (en) * 1974-08-22 1976-03-19 Xerox Corp LASER WITH DISTRIBUTED RECEPTION, SEMICONDUCTOR WITH ELECTRIC PUMPING
FR2288405A1 (en) * 1974-10-15 1976-05-14 Xerox Corp HETEROJUNCTION DIODE LASER

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1427209A (en) * 1972-09-22 1976-03-10 Varian Associates Lattice matched heterojunction devices
FR2282731A1 (en) * 1974-08-22 1976-03-19 Xerox Corp LASER WITH DISTRIBUTED RECEPTION, SEMICONDUCTOR WITH ELECTRIC PUMPING
FR2288405A1 (en) * 1974-10-15 1976-05-14 Xerox Corp HETEROJUNCTION DIODE LASER

Also Published As

Publication number Publication date
GB2015814A (en) 1979-09-12
DE2908257A1 (en) 1979-09-13
FR2418970B1 (en) 1981-12-31
JPS5555596A (en) 1980-04-23
GB2015814B (en) 1982-06-03

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Legal Events

Date Code Title Description
CL Concession to grant licences
ST Notification of lapse