FR2404308A1 - ARRANGEMENT OF MULTICOLORED LIGHT-EMITTING DIODES - Google Patents

ARRANGEMENT OF MULTICOLORED LIGHT-EMITTING DIODES

Info

Publication number
FR2404308A1
FR2404308A1 FR7824961A FR7824961A FR2404308A1 FR 2404308 A1 FR2404308 A1 FR 2404308A1 FR 7824961 A FR7824961 A FR 7824961A FR 7824961 A FR7824961 A FR 7824961A FR 2404308 A1 FR2404308 A1 FR 2404308A1
Authority
FR
France
Prior art keywords
arrangement
emitting diodes
multicolored light
light
multicolored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7824961A
Other languages
French (fr)
Other versions
FR2404308B1 (en
Inventor
Frank Fu Fang
Kwang Kuo Shih
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2404308A1 publication Critical patent/FR2404308A1/en
Application granted granted Critical
Publication of FR2404308B1 publication Critical patent/FR2404308B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/956—Making multiple wavelength emissive device

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)

Abstract

Arrangement de diodes émettrices de lumière multicolores. Il utilise un substrat semi-conducteur contenant une région en matériau semi-conducteur AB1-x Cx présentant une variation de concentration de B1-x Cx où 0 < x < 1. La valeur de x croît graduellement dans la couche AB1-x Cx de sorte que des diodes puissent être fabriquées dans le substrat à des points de concentration particuliers où la lumière peut être émise.Arrangement of multicolored light-emitting diodes. It uses a semiconductor substrate containing a region of semiconductor material AB1-x Cx exhibiting a variation in concentration of B1-x Cx where 0 <x <1. The value of x gradually increases in the layer AB1-x Cx of so that diodes can be fabricated in the substrate at particular concentration points where light can be emitted.

FR7824961A 1977-09-21 1978-08-21 ARRANGEMENT OF MULTICOLORED LIGHT-EMITTING DIODES Granted FR2404308A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/835,097 US4148045A (en) 1977-09-21 1977-09-21 Multicolor light emitting diode array

Publications (2)

Publication Number Publication Date
FR2404308A1 true FR2404308A1 (en) 1979-04-20
FR2404308B1 FR2404308B1 (en) 1980-11-28

Family

ID=25268568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7824961A Granted FR2404308A1 (en) 1977-09-21 1978-08-21 ARRANGEMENT OF MULTICOLORED LIGHT-EMITTING DIODES

Country Status (6)

Country Link
US (1) US4148045A (en)
JP (1) JPS5448188A (en)
CA (1) CA1107378A (en)
DE (1) DE2838818A1 (en)
FR (1) FR2404308A1 (en)
GB (1) GB1600212A (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54123884A (en) * 1978-03-17 1979-09-26 Hitachi Ltd Light emission diode of multi-color and its manufacture
JPS556687A (en) * 1978-06-29 1980-01-18 Handotai Kenkyu Shinkokai Traffic use display
JPS5696834A (en) * 1979-12-28 1981-08-05 Mitsubishi Monsanto Chem Co Compound semiconductor epitaxial wafer and manufacture thereof
US4577207A (en) * 1982-12-30 1986-03-18 At&T Bell Laboratories Dual wavelength optical source
US4543511A (en) * 1983-03-24 1985-09-24 Wisconsin Alumni Research Foundation Semiconductor electrodes having regions of graded composition exhibiting photoluminescence and electroluminescence
US5436192A (en) * 1989-03-24 1995-07-25 Xerox Corporation Method of fabricating semiconductor structures via photo induced evaporation enhancement during in situ epitaxial growth
JPH0327577A (en) * 1989-06-23 1991-02-05 イーストマン・コダックジャパン株式会社 Light emitting diode array
US5102824A (en) * 1990-11-05 1992-04-07 California Institute Of Technology Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions
US5126803A (en) * 1991-03-11 1992-06-30 The Boeing Company Broadband quantum well LED
WO1994015369A1 (en) * 1992-12-22 1994-07-07 Research Corporation Technologies, Inc. Group ii-vi compound semiconductor light emitting devices and an ohmic contact therefor
US5518934A (en) * 1994-07-21 1996-05-21 Trustees Of Princeton University Method of fabricating multiwavelength infrared focal plane array detector
JPH0856018A (en) * 1994-08-11 1996-02-27 Rohm Co Ltd Semiconductor light emitting device, and manufacture of semiconductor light emitting device
US6712481B2 (en) * 1995-06-27 2004-03-30 Solid State Opto Limited Light emitting panel assemblies
US5613751A (en) * 1995-06-27 1997-03-25 Lumitex, Inc. Light emitting panel assemblies
JP2930032B2 (en) * 1996-09-26 1999-08-03 日本電気株式会社 II-VI compound semiconductor light emitting device and method of manufacturing the same
JPH11233816A (en) * 1998-02-13 1999-08-27 Oki Electric Ind Co Ltd Semiconductor light emitting device and manufacture thereof
US6033926A (en) * 1998-06-04 2000-03-07 Lucent Technologies Inc. Method for making multiple wavelength semiconductor lasers on a single wafer
US6159758A (en) * 1999-07-09 2000-12-12 Lucent Technologies Inc. Method of improving laser yield for target wavelengths in epitaxial InGaAsP lasers based upon the thermal conductivity of the InP substrate
JP3486900B2 (en) * 2000-02-15 2004-01-13 ソニー株式会社 Light emitting device and optical device using the same
DE60231484D1 (en) * 2001-04-09 2009-04-23 Eveready Battery Inc IMPROVED LIGHTING DEVICE
DE10345413A1 (en) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Process for preparation of an epitaxial structural element based on a first group III/V compound semiconductor material system (SMS) with a first group V element on a substrate or buffer layer useful in semiconductor technology
EP1521295B1 (en) * 2003-09-30 2016-11-02 OSRAM Opto Semiconductors GmbH Method for forming an epitaxial layer sequence in a component and optoelectronic semiconductor chip
GB2409572B (en) * 2003-12-24 2006-02-15 Intense Photonics Ltd Generating multiple bandgaps using multiple epitaxial layers
EP2444713A1 (en) * 2010-10-19 2012-04-25 University College Cork A light source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333135A (en) * 1965-06-25 1967-07-25 Gen Electric Semiconductive display device
US3890170A (en) * 1972-02-29 1975-06-17 Motorola Inc Method of making a multicolor light display by graded mesaing
FR2317774A1 (en) * 1975-07-08 1977-02-04 Radiotechnique Compelec MONOLITHIC SEMICONDUCTOR POLYCHROME UNIT

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3611069A (en) * 1969-11-12 1971-10-05 Gen Electric Multiple color light emitting diodes
US3942065A (en) * 1974-11-11 1976-03-02 Motorola, Inc. Monolithic, milticolor, light emitting diode display device
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
JPS5648993B2 (en) * 1975-02-28 1981-11-19

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3333135A (en) * 1965-06-25 1967-07-25 Gen Electric Semiconductive display device
US3890170A (en) * 1972-02-29 1975-06-17 Motorola Inc Method of making a multicolor light display by graded mesaing
FR2317774A1 (en) * 1975-07-08 1977-02-04 Radiotechnique Compelec MONOLITHIC SEMICONDUCTOR POLYCHROME UNIT

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV700/70 *

Also Published As

Publication number Publication date
FR2404308B1 (en) 1980-11-28
GB1600212A (en) 1981-10-14
US4148045A (en) 1979-04-03
DE2838818A1 (en) 1979-03-29
JPS5448188A (en) 1979-04-16
CA1107378A (en) 1981-08-18

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Legal Events

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ST Notification of lapse