KR950012788A - High efficiency light emitting element - Google Patents

High efficiency light emitting element Download PDF

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Publication number
KR950012788A
KR950012788A KR1019930022336A KR930022336A KR950012788A KR 950012788 A KR950012788 A KR 950012788A KR 1019930022336 A KR1019930022336 A KR 1019930022336A KR 930022336 A KR930022336 A KR 930022336A KR 950012788 A KR950012788 A KR 950012788A
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KR
South Korea
Prior art keywords
light emitting
region
conductive semiconductor
electrode
semiconductor layer
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Application number
KR1019930022336A
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Korean (ko)
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KR970003850B1 (en
Inventor
임경룡
Original Assignee
김희수
금성기전 주식회사
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Priority to KR1019930022336A priority Critical patent/KR970003850B1/en
Publication of KR950012788A publication Critical patent/KR950012788A/en
Application granted granted Critical
Publication of KR970003850B1 publication Critical patent/KR970003850B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 발광소자에 관한 것으로, 종래의 발광소자구조에서의 칩의 최상부 반도체층 표면에서의 빛이 반사에 의해 광변환 효율이 저하되는 것을 방지하기 위해 제1도전형의 반도체기판(15)과, 상기 제1도전형의 반도체기판(15)상에 형성된 제1도전형 반도체층(14), 상기 제1도전형 반도체층(14)상에 형성된 발광영역층(13), 상기 발광영역층(13)상에 형성된 전극접촉영역을 제외한 영역이 상기 전극접촉 영역의 두께보다 얇은 두께를 가지는 제2도전형 반도체층(17), 상기 제2도전형 반도체층(17)의 전극접촉영역상에 형성된 제2도전형 전극(11) 및 상기 제1도전형의 반도체기판(15)하부에 형성된 제1도전형 전극(16)을 구비한 것을 특징으로 하는 발광소자를 제공한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device, and in order to prevent light conversion efficiency from being degraded due to reflection of light on the top surface of a semiconductor layer of a chip in a conventional light emitting device structure, A first conductive semiconductor layer 14 formed on the first conductive semiconductor substrate 15, a light emitting region layer 13 formed on the first conductive semiconductor layer 14, and a light emitting region layer ( 13 except for the electrode contact region formed on the second conductive semiconductor layer 17 having a thickness thinner than that of the electrode contact region, and formed on the electrode contact region of the second conductive semiconductor layer 17. Provided is a light emitting device comprising a second conductive electrode (11) and a first conductive electrode (16) formed under the first conductive semiconductor substrate (15).

본 발명에 의하면 광변환 효율을 증가시킬 수 있게 된다.According to the present invention it is possible to increase the light conversion efficiency.

Description

고효율 발광소자High efficiency light emitting element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 발광소자 단면구조도,1 is a cross-sectional structure of a conventional light emitting device,

제2도는 종래의 발광소자칩을 응용한 예를 도시한 도면,2 is a view showing an example of applying a conventional light emitting device chip,

제3도는 종래의 발광소자칩의 불순물농도 대 칩의 두께를 나타낸 그래프,3 is a graph showing the impurity concentration of the conventional light emitting device chip versus the thickness of the chip,

제4도는 본 발명의 발광소자 단면구조도.4 is a cross-sectional view of the light emitting device of the present invention.

Claims (3)

양전하와 음전하의 결합에 의해 빛을 생성하는 발광영역과, 양전하 및 음전하를 주입시키기 위한 전극, 상기 전극으로부터 주입된 전하를 상기 발광영역으로 전달하는 반도체층들로 이루어진 발광소자에 있어서, 상기 발광영역으로부터 생성된 빛이 방출되는 측의 최상부 반도체층의 상기 전극과 접촉된 영역을 제외한 영역의 두께가 전극과 접촉되지 않은 영역의 두께보다 얇게 된 것을 특징으로 하는 발광소자.A light emitting device comprising a light emitting region for generating light by a combination of positive and negative charges, an electrode for injecting positive and negative charges, and a semiconductor layer for transferring charges injected from the electrode to the light emitting region, wherein the light emitting region And a thickness of a region other than the region in contact with the electrode of the uppermost semiconductor layer on the side from which light is emitted is thinner than the thickness of the region not in contact with the electrode. 제1도전형의 반도체기판(15)과, 상기 제1도전형의 반도체기판(15)상에 형성된 제1도전형 반도체층(14), 상기 제1도전형 반도체층(14)상에 형성된 발광영역층(13), 상기 발광영역층(13)상에 형성된 전극접촉영역을 제외한 영역이 상기 전극접촉 영역의 두께보다 얇은 두께를 가지는 제2도전형 반도체층(17), 상기 제2도전형 반도체층(17)의 전극접촉영역상에 형성된 제2도전형 전극(11) 및 상기 제1도전형의 반도체기판(15)하부에 형성된 제1도전형 전극(16)을 구비한 것을 특징으로 하는 발광소자.Light emission formed on the first conductive semiconductor substrate 15, the first conductive semiconductor layer 14 formed on the first conductive semiconductor substrate 15, and the first conductive semiconductor layer 14. The second conductive semiconductor layer 17 and the second conductive semiconductor having a thickness thinner than the thickness of the electrode contact region except for the region layer 13 and the electrode contact region formed on the light emitting region layer 13. And a second conductive electrode 11 formed on the electrode contact region of the layer 17 and a first conductive electrode 16 formed under the first conductive semiconductor substrate 15. device. 제2항에 있어서, 상기 제2도전형의 반도체층(17)의 전극접촉영역을 제외한 영역의 두께는 전극접촉영역의 두께의 1/2정도임을 특징으로 하는 발광소자.The light emitting device according to claim 2, wherein the thickness of the region except for the electrode contact region of the second conductive semiconductor layer (17) is about 1/2 of the thickness of the electrode contact region. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930022336A 1993-10-26 1993-10-26 High effect luminescence device KR970003850B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930022336A KR970003850B1 (en) 1993-10-26 1993-10-26 High effect luminescence device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930022336A KR970003850B1 (en) 1993-10-26 1993-10-26 High effect luminescence device

Publications (2)

Publication Number Publication Date
KR950012788A true KR950012788A (en) 1995-05-17
KR970003850B1 KR970003850B1 (en) 1997-03-22

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Application Number Title Priority Date Filing Date
KR1019930022336A KR970003850B1 (en) 1993-10-26 1993-10-26 High effect luminescence device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469986B1 (en) * 2001-09-18 2005-02-04 하용운 Painting composite for optical cable

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100469986B1 (en) * 2001-09-18 2005-02-04 하용운 Painting composite for optical cable

Also Published As

Publication number Publication date
KR970003850B1 (en) 1997-03-22

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