GB914260A - Improvements in or relating to the production of semi-conductor devices - Google Patents

Improvements in or relating to the production of semi-conductor devices

Info

Publication number
GB914260A
GB914260A GB28189/59A GB2818959A GB914260A GB 914260 A GB914260 A GB 914260A GB 28189/59 A GB28189/59 A GB 28189/59A GB 2818959 A GB2818959 A GB 2818959A GB 914260 A GB914260 A GB 914260A
Authority
GB
United Kingdom
Prior art keywords
plate
electrode
alloying
gold
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28189/59A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB914260A publication Critical patent/GB914260A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2924/01042—Molybdenum [Mo]
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Abstract

914,260. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Aug. 18, 1959 [Sept. 30, 1958], No. 28189/59. Class 37. A process for the manufacture of a semiconductor device comprises alloying a gold foil to a silicon body to form an electrode, providing at least one face of a molybdenum carrier plate with a gold coating the thickness of which is not more than <SP>1</SP>/ 30 th of the thickness of the gold foil, and alloying the gold-coated face of the Mo plate to the electrode at a temperature between 400‹ and 450‹ C. The Au coating on the Mo plate may be bonded to the plate by flashing at 900‹ C. in an inert atmosphere; it may be applied in several layers, each being independently flashed. Alternatively, as in the transistor shown, the Mo plate 14 is coated with successive layers of Ni 15, Ag 16, and Au 17, each layer being electrolytically deposited and flashed at 800‹ C. Completely coating the Mo plate enables it to be soft soldered to a metallic supporting or cooling body, and protects it when the device is etched in, e.g. a 1 : 1 mixture of hydrofluoric acid and nitric acid. The disc-shaped body 10 of P-type Si has an alloyed annular base electrode 21 of B-doped Au, and emitter and collector electrodes 18, 13, made by alloying Sb-doped Au foils to the body. Finally, the collector electrode 13 is alloyed with the Au layer 17 on the Mo plate by heating to between 400‹ and 450‹ C.
GB28189/59A 1958-09-30 1959-08-18 Improvements in or relating to the production of semi-conductor devices Expired GB914260A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60096A DE1110321B (en) 1958-09-30 1958-09-30 Alloy process for the production of a semiconductor device with a silicon body

Publications (1)

Publication Number Publication Date
GB914260A true GB914260A (en) 1963-01-02

Family

ID=7493849

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28189/59A Expired GB914260A (en) 1958-09-30 1959-08-18 Improvements in or relating to the production of semi-conductor devices

Country Status (6)

Country Link
BE (1) BE583120A (en)
CH (1) CH372385A (en)
DE (1) DE1110321B (en)
FR (1) FR1233332A (en)
GB (1) GB914260A (en)
NL (1) NL242265A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE620118A (en) * 1961-07-14
DE1295697B (en) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Semiconductor component and method for its manufacture
US3200490A (en) * 1962-12-07 1965-08-17 Philco Corp Method of forming ohmic bonds to a germanium-coated silicon body with eutectic alloyforming materials
GB1025453A (en) * 1964-01-29 1966-04-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE540780A (en) * 1954-08-26 1900-01-01
NL208617A (en) * 1955-05-10 1900-01-01

Also Published As

Publication number Publication date
DE1110321B (en) 1961-07-06
BE583120A (en) 1960-03-29
NL242265A (en) 1900-01-01
FR1233332A (en) 1960-10-12
CH372385A (en) 1963-10-15

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