GB1475597A - Electron emissive materials and methods of preparation - Google Patents

Electron emissive materials and methods of preparation

Info

Publication number
GB1475597A
GB1475597A GB3185374A GB3185374A GB1475597A GB 1475597 A GB1475597 A GB 1475597A GB 3185374 A GB3185374 A GB 3185374A GB 3185374 A GB3185374 A GB 3185374A GB 1475597 A GB1475597 A GB 1475597A
Authority
GB
United Kingdom
Prior art keywords
layer
gaas
electrons
etched
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3185374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Standard Electric Corp
Original Assignee
International Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Standard Electric Corp filed Critical International Standard Electric Corp
Publication of GB1475597A publication Critical patent/GB1475597A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/32—Secondary-electron-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

1475597 Cathode materials and processing INTERNATIONAL STANDARD ELECTRIC CORP 18 July 1974 [23 July 1973] 31853/74 Heading H1D To provide a free standing electron emitter a thin film 12 of gallium aluminium arsenide GaxAl 1-x As (preferably x = 0-0À7) is deposited epitaxially on a substrate 10 of GaAs, followed by a second epitaxial thin layer 14 of GaAs. The substrate 10 is etched through a ring of wax resist by e.g. an equivolume mixture of 30% v/v aqueous solution of H 2 O 2 and 0À28 g/ml solution of NH 4 OH which does not attack Ga x Al 1-x As, the etchant being adjusted according to the value of x. To act as a photocathode the outer surface of GaAs layer 14 is coated with ohmic contact layer 19; light is transmitted through the transparent Ga x Al 1-x As layer 12, electrons being emitted from the far side. Alternatively (Fig. 3 not shown) a further Ga x Al 1-x As layer may be deposited, the central part of the layer 12 being etched away with HCl which does not attack GaAs. The device now emits electrons from the upper face of layer 14 when light is transmitted from below through the added layer of Ga x Al 1-x As. To act as a secondary electron emitter the structure of Fig. 2 without ohmic contact 19 is further etched with HCl to remove the central part of the Ga x Al 1-x As layer 12. Electrons which fall on either side of the GaAs layer 14 then stimulate secondary emission from one or both scales. Typically the device may be 1-2 cm in diameter with layers 10, 12, 14 of thickness 500, 20-50, 3-8 microns respectively.
GB3185374A 1973-07-23 1974-07-18 Electron emissive materials and methods of preparation Expired GB1475597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38196273A 1973-07-23 1973-07-23

Publications (1)

Publication Number Publication Date
GB1475597A true GB1475597A (en) 1977-06-01

Family

ID=23507017

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3185374A Expired GB1475597A (en) 1973-07-23 1974-07-18 Electron emissive materials and methods of preparation

Country Status (2)

Country Link
FR (1) FR2239011B1 (en)
GB (1) GB1475597A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5986387A (en) * 1996-11-07 1999-11-16 Hamamatsu Photonics K.K. Transmission type electron multiplier and electron tube provided

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2574239B1 (en) * 1984-11-30 1987-01-23 Labo Electronique Physique IMAGE SENSOR FOR CAMERA OPERATING IN DAY-NIGHT MODE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5986387A (en) * 1996-11-07 1999-11-16 Hamamatsu Photonics K.K. Transmission type electron multiplier and electron tube provided

Also Published As

Publication number Publication date
FR2239011B1 (en) 1977-10-07
FR2239011A1 (en) 1975-02-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee