KR960001783B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR960001783B1
KR960001783B1 KR1019920000835A KR920000835A KR960001783B1 KR 960001783 B1 KR960001783 B1 KR 960001783B1 KR 1019920000835 A KR1019920000835 A KR 1019920000835A KR 920000835 A KR920000835 A KR 920000835A KR 960001783 B1 KR960001783 B1 KR 960001783B1
Authority
KR
South Korea
Prior art keywords
output
data
serial
address pointer
port
Prior art date
Application number
KR1019920000835A
Other languages
English (en)
Korean (ko)
Other versions
KR920015374A (ko
Inventor
다쯔오 이까와
시게루 오시마
Original Assignee
가부시끼가이샤 도시바
아오이 죠이찌
도시바 마이크로일렉트로닉스 가부시끼가이샤
다께다이 마사다까
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바, 아오이 죠이찌, 도시바 마이크로일렉트로닉스 가부시끼가이샤, 다께다이 마사다까 filed Critical 가부시끼가이샤 도시바
Publication of KR920015374A publication Critical patent/KR920015374A/ko
Application granted granted Critical
Publication of KR960001783B1 publication Critical patent/KR960001783B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/20—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits using counters or linear-feedback shift registers [LFSR]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
KR1019920000835A 1991-01-23 1992-01-22 반도체 기억 장치 KR960001783B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-006427 1991-01-23
JP3006427A JP2549209B2 (ja) 1991-01-23 1991-01-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR920015374A KR920015374A (ko) 1992-08-26
KR960001783B1 true KR960001783B1 (ko) 1996-02-05

Family

ID=11638090

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920000835A KR960001783B1 (ko) 1991-01-23 1992-01-22 반도체 기억 장치

Country Status (5)

Country Link
US (1) US5239509A (ja)
EP (1) EP0496391B1 (ja)
JP (1) JP2549209B2 (ja)
KR (1) KR960001783B1 (ja)
DE (1) DE69220256T2 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2768175B2 (ja) * 1992-10-26 1998-06-25 日本電気株式会社 半導体メモリ
JPH06333384A (ja) * 1993-05-19 1994-12-02 Toshiba Corp 半導体記憶装置
GB2283342B (en) * 1993-10-26 1998-08-12 Intel Corp Programmable code store circuitry for a nonvolatile semiconductor memory device
US5526311A (en) * 1993-12-30 1996-06-11 Intel Corporation Method and circuitry for enabling and permanently disabling test mode access in a flash memory device
EP0668561B1 (en) * 1994-02-22 2002-04-10 Siemens Aktiengesellschaft A flexible ECC/parity bit architecture
US5553238A (en) * 1995-01-19 1996-09-03 Hewlett-Packard Company Powerfail durable NVRAM testing
US5657287A (en) * 1995-05-31 1997-08-12 Micron Technology, Inc. Enhanced multiple block writes to adjacent blocks of memory using a sequential counter
US6214706B1 (en) * 1998-08-28 2001-04-10 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
US20020078311A1 (en) * 2000-12-20 2002-06-20 Fujitsu Limited Multi-port memory based on DRAM core
US7120761B2 (en) 2000-12-20 2006-10-10 Fujitsu Limited Multi-port memory based on DRAM core
US6920072B2 (en) * 2003-02-28 2005-07-19 Union Semiconductor Technology Corporation Apparatus and method for testing redundant memory elements
GB2403574B (en) 2003-07-03 2005-05-11 Micron Technology Inc Compact decode and multiplexing circuitry for a multi-port memory having a common memory interface
KR100655081B1 (ko) * 2005-12-22 2006-12-08 삼성전자주식회사 가변적 액세스 경로를 가지는 멀티 포트 반도체 메모리장치 및 그에 따른 방법
KR100745374B1 (ko) * 2006-02-21 2007-08-02 삼성전자주식회사 멀티포트 반도체 메모리 장치 및 그에 따른 신호 입출력방법
JP5086577B2 (ja) * 2006-07-28 2012-11-28 株式会社日立超エル・エス・アイ・システムズ 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4227244A (en) * 1978-11-30 1980-10-07 Sperry Corporation Closed loop address
JPS62277700A (ja) * 1986-05-24 1987-12-02 Hitachi Electronics Eng Co Ltd ビデオｒａｍテスト方式
JPH0760594B2 (ja) * 1987-06-25 1995-06-28 富士通株式会社 半導体記憶装置
JPH0283899A (ja) * 1988-09-20 1990-03-23 Fujitsu Ltd 半導体記憶装置
JPH02187989A (ja) * 1989-01-13 1990-07-24 Nec Corp デュアルポートメモリ
JP2953737B2 (ja) * 1990-03-30 1999-09-27 日本電気株式会社 複数ビット並列テスト回路を具備する半導体メモリ

Also Published As

Publication number Publication date
JP2549209B2 (ja) 1996-10-30
EP0496391A2 (en) 1992-07-29
EP0496391B1 (en) 1997-06-11
DE69220256D1 (de) 1997-07-17
EP0496391A3 (en) 1993-09-29
KR920015374A (ko) 1992-08-26
DE69220256T2 (de) 1997-10-30
JPH056696A (ja) 1993-01-14
US5239509A (en) 1993-08-24

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