KR950033623A - 액정표시장치 및 그 제조방법 - Google Patents

액정표시장치 및 그 제조방법 Download PDF

Info

Publication number
KR950033623A
KR950033623A KR1019950012968A KR19950012968A KR950033623A KR 950033623 A KR950033623 A KR 950033623A KR 1019950012968 A KR1019950012968 A KR 1019950012968A KR 19950012968 A KR19950012968 A KR 19950012968A KR 950033623 A KR950033623 A KR 950033623A
Authority
KR
South Korea
Prior art keywords
thin film
wirings
lower substrate
liquid crystal
metal
Prior art date
Application number
KR1019950012968A
Other languages
English (en)
Inventor
요코 와쿠이
노부타케 코니시
Original Assignee
카나이 쯔또무
가부시기가이샤 히다찌세이사구쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 카나이 쯔또무, 가부시기가이샤 히다찌세이사구쇼 filed Critical 카나이 쯔또무
Publication of KR950033623A publication Critical patent/KR950033623A/ko

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은, 액정표시장치, 특히 박막트랜지스터 구동액정표시장치 및 그 제조방법에 관한 것으로서, 신호선의 배선수율, 최종 보호막의 평탄성을 향상시킨 장치 및 방법을 제공하는 것을 목적으로 한 것이며, 그 구성에 있어서, 복수의 주사배선과, 이들에 매트릭스형상으로 교차하는 복수의 영상신호배선과, 이들 배선의 각각의 교차점에 대응해서 형성된 복수의 박막트랜지스터와, 이들 복수의 박막트랜지스터의 각각에 접속된 복수의 화소전극을 가진 하부기판과, 상기 하부기판에 대향해서 배설되고, 상기 각각의 화소전극에 대향하는 공통전극을 가진 상부기판과, 상기 하부기판 및 상부기판사이에 봉입된 액정층을 가지고, 상기 복수의 주사배선의 각각은 대응하는 상기 각각의 박막트랜지스터의 게이트전극을 구성하도록, 상기 하부 기판위에 형성되고, 이들 주사배선은 기둥형상결정을 가진 금속막으로 이루어지고, 이 금속위에는 이 금속의 자기정합산화막이 형성되어 있는 것을 특징으로 하는 액정표시장치 및 제조방법을 실현한다.

Description

액정표시장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 박막트랜지스터 구동액정표시장치의 1화소의 모식단면도.

Claims (1)

  1. 복수의 주사배선과, 이들에 매트릭스형상으로 교차하는 복수의 영상신호배선과, 이들 배선의 각각의 교차점에 대응해서 형성된 복수의 박막트랜지스터와, 이들 복수의 박막트랜지스터의 각각에 접속되 복수의 화소전극을 가진 하부기판과, 상기 하부기판에 대향해서 배설되고, 상기 각각의 화소전극에 대향하는 공통전극을 가진 상부기판과, 상기 하부기판 및 상부기판사이에 봉입된 액정층을 가지고, 상기 복수의 주사배선의 각각은 대응하는 상기 각각의 박막트랜지스터의 게이트전극을 구성하도록, 상기 하부 기판위에 형성되고, 이들 주사배선은 기둥형상 결정을 가진 금속막으로 이루어지고, 이 금속위에는 이 금속의 자기정합산화막이 형성되어 있는 것을 특징으로 하는 액정표시장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950012968A 1994-05-27 1995-05-24 액정표시장치 및 그 제조방법 KR950033623A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-114935 1994-05-27
JP11493594A JPH07321328A (ja) 1994-05-27 1994-05-27 薄膜トランジスタ駆動液晶表示装置およびその製法

Publications (1)

Publication Number Publication Date
KR950033623A true KR950033623A (ko) 1995-12-26

Family

ID=14650307

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950012968A KR950033623A (ko) 1994-05-27 1995-05-24 액정표시장치 및 그 제조방법

Country Status (3)

Country Link
US (2) US5633738A (ko)
JP (1) JPH07321328A (ko)
KR (1) KR950033623A (ko)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07321328A (ja) * 1994-05-27 1995-12-08 Hitachi Ltd 薄膜トランジスタ駆動液晶表示装置およびその製法
US5990492A (en) * 1995-05-30 1999-11-23 Samsung Electronics Co., Ltd. Self-aligned thin-film transistor for a liquid crystal display having source and drain electrodes of different material
US6081308A (en) * 1996-11-21 2000-06-27 Samsung Electronics Co., Ltd. Method for manufacturing liquid crystal display
US6445004B1 (en) * 1998-02-26 2002-09-03 Samsung Electronics Co., Ltd. Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and a manufacturing method thereof
US6337520B1 (en) * 1997-02-26 2002-01-08 Samsung Electronics Co., Ltd. Composition for a wiring, a wiring using the composition, manufacturing method thereof, a display using the wiring and manufacturing method thereof
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0903613B1 (en) * 1997-09-17 2003-01-02 Matsushita Electric Industrial Co., Ltd. Reflective liquid crystal display device
US6512566B1 (en) * 1997-10-24 2003-01-28 Canon Kabushiki Kaisha Matrix substrate, liquid crystal display device using it, and method for producing the matrix substrate
KR100297204B1 (ko) * 1997-10-24 2001-10-24 구본준, 론 위라하디락사 액정표시장치용어레이기판
JP3968484B2 (ja) * 1998-02-18 2007-08-29 ソニー株式会社 薄膜トランジスタの製造方法
US6140668A (en) * 1998-04-28 2000-10-31 Xerox Corporation Silicon structures having an absorption layer
JP4169896B2 (ja) * 1999-06-23 2008-10-22 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタとその製造方法
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
JP4118484B2 (ja) * 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
TW462135B (en) * 2000-08-04 2001-11-01 Acer Display Tech Inc Method for manufacturing the electronic device of thin film transistor display
KR100579181B1 (ko) * 2000-12-06 2006-05-11 삼성에스디아이 주식회사 하프-디벨로프를 이용한 셀프-얼라인 패턴형성방법
JP4920140B2 (ja) * 2001-05-18 2012-04-18 ゲットナー・ファンデーション・エルエルシー 液晶表示装置及びその製造方法
TW574532B (en) * 2001-07-18 2004-02-01 Au Optronics Corp Method for manufacturing reflective TFT LCD devices with coarse diffusing surfaces
JP2003045874A (ja) 2001-07-27 2003-02-14 Semiconductor Energy Lab Co Ltd 金属配線およびその作製方法、並びに金属配線基板およびその作製方法
JP3953320B2 (ja) * 2001-12-28 2007-08-08 三洋電機株式会社 表示装置及びその製造方法
TWI296062B (en) * 2001-12-28 2008-04-21 Sanyo Electric Co Liquid crystal display device
JP3995476B2 (ja) * 2001-12-28 2007-10-24 三洋電機株式会社 表示装置及びその製造方法
KR100885013B1 (ko) * 2002-01-03 2009-02-20 삼성전자주식회사 박막 트랜지스터 및 액정 표시 장치
US7638800B2 (en) * 2002-01-15 2009-12-29 Samsung Electronics Co., Ltd. Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same
TWI230304B (en) * 2002-03-04 2005-04-01 Sanyo Electric Co Display device with reflecting layer
JP4097521B2 (ja) * 2002-12-27 2008-06-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4262521B2 (ja) * 2003-05-28 2009-05-13 シャープ株式会社 表示装置及びその検査方法
US7248306B2 (en) * 2004-07-23 2007-07-24 Hewlett-Packard Development Company, L.P. Method of making active matrix display
KR101213871B1 (ko) * 2005-12-15 2012-12-18 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
TWI455306B (zh) * 2006-03-02 2014-10-01 Freescale Semiconductor Inc 具有金屬電移設計之射頻功率電晶體裝置及其方法
US7525152B2 (en) * 2006-03-02 2009-04-28 Freescale Semiconductor, Inc. RF power transistor device with metal electromigration design and method thereof
US20080268220A1 (en) * 2007-04-25 2008-10-30 Paul Olliges Thermal insulative product and related methods
KR100938897B1 (ko) * 2008-02-11 2010-01-27 삼성모바일디스플레이주식회사 액정표시장치 및 그 구동방법
KR20100028367A (ko) * 2008-09-04 2010-03-12 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TWI409883B (zh) * 2010-11-29 2013-09-21 E Ink Holdings Inc 圖案化金屬層之方法以及利用其之半導體元件製造方法
US8633044B2 (en) * 2011-02-01 2014-01-21 Sharp Kabushiki Kaisha Display device and method for fabricating same
KR20200073715A (ko) 2018-12-14 2020-06-24 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
CN112114460B (zh) * 2020-09-23 2022-12-23 北海惠科光电技术有限公司 基于阵列基板的绝缘单元及其制备方法、阵列基板及其制备方法、显示机构

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5417573A (en) * 1977-07-08 1979-02-08 Kubota Ltd Apparatus for removing impurities
US5162933A (en) * 1990-05-16 1992-11-10 Nippon Telegraph And Telephone Corporation Active matrix structure for liquid crystal display elements wherein each of the gate/data lines includes at least a molybdenum-base alloy layer containing 0.5 to 10 wt. % of chromium
DE69121782T2 (de) * 1990-05-31 1997-01-30 Canon Kk Flüssigkristall-Farbanzeige und Verfahren zu seiner Herstellung
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
JP2999271B2 (ja) * 1990-12-10 2000-01-17 株式会社半導体エネルギー研究所 表示装置
JP3111478B2 (ja) * 1991-02-06 2000-11-20 三菱電機株式会社 金属薄膜のテーパーエッチング方法及び薄膜トランジスタ
KR960014823B1 (ko) * 1991-03-15 1996-10-21 가부시기가이샤 히다찌세이사구쇼 액정표시장치
JP3199404B2 (ja) * 1991-09-24 2001-08-20 松下電器産業株式会社 薄膜トランジスタの製造方法
JP3172841B2 (ja) * 1992-02-19 2001-06-04 株式会社日立製作所 薄膜トランジスタとその製造方法及び液晶表示装置
JPH06122982A (ja) * 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP2614403B2 (ja) * 1993-08-06 1997-05-28 インターナショナル・ビジネス・マシーンズ・コーポレイション テーパエッチング方法
JPH07321328A (ja) * 1994-05-27 1995-12-08 Hitachi Ltd 薄膜トランジスタ駆動液晶表示装置およびその製法

Also Published As

Publication number Publication date
US5756372A (en) 1998-05-26
US5633738A (en) 1997-05-27
JPH07321328A (ja) 1995-12-08

Similar Documents

Publication Publication Date Title
KR950033623A (ko) 액정표시장치 및 그 제조방법
KR980004297A (ko) 액티브 매트릭스 액정 디스플레이 패널 및 그것을 위한 배선설계 방법
KR950001373A (ko) 액정표시장치 및 그 제조방법
KR920018512A (ko) 액정표시장치
KR950019865A (ko) 액정표시장치 및 그 제조방법
KR960008393A (ko) 액정표시장치
KR930002864A (ko) 액정표시 장치
US5457553A (en) Thin-film transistor panel with reduced number of capacitor lines
KR970048747A (ko) 액정 표시 장치용 박막 트랜지스터 기판
ATE61673T1 (de) Matrixanzeige mit zusammengesetzten transistoren.
JPH052969B2 (ko)
KR960018696A (ko) 액티브매트릭스형 액정표시장치
KR930004792A (ko) 액정 표시 장치
KR970002412A (ko) 액정표시장치
KR960018729A (ko) 한 화소에 이중 배선과 복수의 트랜지스터를 구비한 액정 표시 장치
KR960035118A (ko) 액정표시장치
KR0182016B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판
KR970007423A (ko) 액정표시소자의 리페어구조 및 이의 형성방법
KR950029822A (ko) 액정 표시 장치
JP3049588B2 (ja) 薄膜トランジスタ液晶表示装置
JP3771982B2 (ja) 表示用半導体装置
KR19990003282A (ko) 평면 구동 방식의 액정 표시 장치용 기판
JP3552780B2 (ja) 液晶表示装置
KR970071099A (ko) 액정표시소자
JP2523587B2 (ja) アクテイブマトリツクス型液晶表示素子

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid