KR950010284B1 - 기준전압 발생회로 - Google Patents
기준전압 발생회로 Download PDFInfo
- Publication number
- KR950010284B1 KR950010284B1 KR1019920004474A KR920004474A KR950010284B1 KR 950010284 B1 KR950010284 B1 KR 950010284B1 KR 1019920004474 A KR1019920004474 A KR 1019920004474A KR 920004474 A KR920004474 A KR 920004474A KR 950010284 B1 KR950010284 B1 KR 950010284B1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode connected
- reference voltage
- pmos transistor
- drain electrode
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Dram (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004474A KR950010284B1 (ko) | 1992-03-18 | 1992-03-18 | 기준전압 발생회로 |
TW081102803A TW250603B (enrdf_load_stackoverflow) | 1992-03-18 | 1992-04-10 | |
GB9209196A GB2265478B (en) | 1992-03-18 | 1992-04-29 | Reference voltage generating circuit |
FR9205286A FR2688904B1 (fr) | 1992-03-18 | 1992-04-29 | Circuit de generation de tension de reference. |
DE4214106A DE4214106A1 (de) | 1992-03-18 | 1992-04-29 | Bezugsspannungsgeneratorschaltung |
ITMI921017A IT1254948B (it) | 1992-03-18 | 1992-04-29 | Circuito generatore di una tensione di riferimento |
JP4123538A JPH0643953A (ja) | 1992-03-18 | 1992-05-15 | 基準電圧発生回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004474A KR950010284B1 (ko) | 1992-03-18 | 1992-03-18 | 기준전압 발생회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930020658A KR930020658A (ko) | 1993-10-20 |
KR950010284B1 true KR950010284B1 (ko) | 1995-09-12 |
Family
ID=19330566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920004474A Expired - Fee Related KR950010284B1 (ko) | 1992-03-18 | 1992-03-18 | 기준전압 발생회로 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0643953A (enrdf_load_stackoverflow) |
KR (1) | KR950010284B1 (enrdf_load_stackoverflow) |
DE (1) | DE4214106A1 (enrdf_load_stackoverflow) |
FR (1) | FR2688904B1 (enrdf_load_stackoverflow) |
GB (1) | GB2265478B (enrdf_load_stackoverflow) |
IT (1) | IT1254948B (enrdf_load_stackoverflow) |
TW (1) | TW250603B (enrdf_load_stackoverflow) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9423034D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | A reference circuit |
DE69521287T2 (de) * | 1995-03-24 | 2002-05-02 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Schaltungsanordnung zur Erzeugung einer Referenzspannung und Detektion eines Versorgungsspannungsabfalls und zugehöriges Verfahren |
KR100496792B1 (ko) * | 1997-09-04 | 2005-09-08 | 삼성전자주식회사 | 기준전압발생회로 |
US6242972B1 (en) * | 1999-10-27 | 2001-06-05 | Silicon Storage Technology, Inc. | Clamp circuit using PMOS-transistors with a weak temperature dependency |
KR101133758B1 (ko) * | 2005-01-19 | 2012-04-09 | 삼성전자주식회사 | 센서 및 이를 구비한 박막 트랜지스터 표시판 |
JP5482126B2 (ja) * | 2009-11-13 | 2014-04-23 | ミツミ電機株式会社 | 参照電圧発生回路および受信回路 |
CN107015594A (zh) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | 一种偏置电流产生电路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56121114A (en) * | 1980-02-28 | 1981-09-22 | Seiko Instr & Electronics Ltd | Constant-current circuit |
US4464588A (en) * | 1982-04-01 | 1984-08-07 | National Semiconductor Corporation | Temperature stable CMOS voltage reference |
US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
US4847518A (en) * | 1987-11-13 | 1989-07-11 | Harris Semiconductor Patents, Inc. | CMOS voltage divider circuits |
GB2214333B (en) * | 1988-01-13 | 1992-01-29 | Motorola Inc | Voltage sources |
JP2674669B2 (ja) * | 1989-08-23 | 1997-11-12 | 株式会社東芝 | 半導体集積回路 |
KR920004587B1 (ko) * | 1989-10-24 | 1992-06-11 | 삼성전자 주식회사 | 메모리장치의 기준전압 안정화회로 |
-
1992
- 1992-03-18 KR KR1019920004474A patent/KR950010284B1/ko not_active Expired - Fee Related
- 1992-04-10 TW TW081102803A patent/TW250603B/zh active
- 1992-04-29 DE DE4214106A patent/DE4214106A1/de not_active Withdrawn
- 1992-04-29 IT ITMI921017A patent/IT1254948B/it active IP Right Grant
- 1992-04-29 GB GB9209196A patent/GB2265478B/en not_active Expired - Fee Related
- 1992-04-29 FR FR9205286A patent/FR2688904B1/fr not_active Expired - Fee Related
- 1992-05-15 JP JP4123538A patent/JPH0643953A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE4214106A1 (de) | 1993-09-23 |
ITMI921017A0 (it) | 1992-04-29 |
KR930020658A (ko) | 1993-10-20 |
GB9209196D0 (en) | 1992-06-17 |
ITMI921017A1 (it) | 1993-10-29 |
GB2265478A (en) | 1993-09-29 |
FR2688904A1 (fr) | 1993-09-24 |
GB2265478B (en) | 1996-01-03 |
TW250603B (enrdf_load_stackoverflow) | 1995-07-01 |
IT1254948B (it) | 1995-10-11 |
FR2688904B1 (fr) | 1994-06-03 |
JPH0643953A (ja) | 1994-02-18 |
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