IT1254948B - Circuito generatore di una tensione di riferimento - Google Patents
Circuito generatore di una tensione di riferimentoInfo
- Publication number
- IT1254948B IT1254948B ITMI921017A ITMI921017A IT1254948B IT 1254948 B IT1254948 B IT 1254948B IT MI921017 A ITMI921017 A IT MI921017A IT MI921017 A ITMI921017 A IT MI921017A IT 1254948 B IT1254948 B IT 1254948B
- Authority
- IT
- Italy
- Prior art keywords
- reference voltage
- resistor
- generating circuit
- generator
- circuit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Control Of Electrical Variables (AREA)
- Dram (AREA)
Abstract
Circuito generatore di tensione di riferimento che riceve una corrente costante e genera una tensione di riferimento, generatore comprendente un generatore di tensione di riferimento 30 che eroga una tensione di riferimento determinata dal prodotto della corrente di riferimento per la resistenza del resistore collegando il resistore tra l'uscita del generatore di tensione di riferimento 30 e la massa. Il resistore è formato collegando in serie tra loro un diodo MOS e un transistor MOS controllato da una tensione di riferimento. In tal modo Il circuito è insensibile alla temperatura e alle variazioni dei processi di fabbricazione.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920004474A KR950010284B1 (ko) | 1992-03-18 | 1992-03-18 | 기준전압 발생회로 |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI921017A0 ITMI921017A0 (it) | 1992-04-29 |
ITMI921017A1 ITMI921017A1 (it) | 1993-10-29 |
IT1254948B true IT1254948B (it) | 1995-10-11 |
Family
ID=19330566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI921017A IT1254948B (it) | 1992-03-18 | 1992-04-29 | Circuito generatore di una tensione di riferimento |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPH0643953A (it) |
KR (1) | KR950010284B1 (it) |
DE (1) | DE4214106A1 (it) |
FR (1) | FR2688904B1 (it) |
GB (1) | GB2265478B (it) |
IT (1) | IT1254948B (it) |
TW (1) | TW250603B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9423034D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | A reference circuit |
EP0733959B1 (en) * | 1995-03-24 | 2001-06-13 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Circuit for generating a reference voltage and detecting an undervoltage of a supply voltage and corresponding method |
KR100496792B1 (ko) * | 1997-09-04 | 2005-09-08 | 삼성전자주식회사 | 기준전압발생회로 |
US6242972B1 (en) * | 1999-10-27 | 2001-06-05 | Silicon Storage Technology, Inc. | Clamp circuit using PMOS-transistors with a weak temperature dependency |
KR101133758B1 (ko) * | 2005-01-19 | 2012-04-09 | 삼성전자주식회사 | 센서 및 이를 구비한 박막 트랜지스터 표시판 |
JP5482126B2 (ja) * | 2009-11-13 | 2014-04-23 | ミツミ電機株式会社 | 参照電圧発生回路および受信回路 |
CN107015594A (zh) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | 一种偏置电流产生电路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56121114A (en) * | 1980-02-28 | 1981-09-22 | Seiko Instr & Electronics Ltd | Constant-current circuit |
US4464588A (en) * | 1982-04-01 | 1984-08-07 | National Semiconductor Corporation | Temperature stable CMOS voltage reference |
US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
US4847518A (en) * | 1987-11-13 | 1989-07-11 | Harris Semiconductor Patents, Inc. | CMOS voltage divider circuits |
GB2214333B (en) * | 1988-01-13 | 1992-01-29 | Motorola Inc | Voltage sources |
JP2674669B2 (ja) * | 1989-08-23 | 1997-11-12 | 株式会社東芝 | 半導体集積回路 |
KR920004587B1 (ko) * | 1989-10-24 | 1992-06-11 | 삼성전자 주식회사 | 메모리장치의 기준전압 안정화회로 |
-
1992
- 1992-03-18 KR KR1019920004474A patent/KR950010284B1/ko not_active IP Right Cessation
- 1992-04-10 TW TW081102803A patent/TW250603B/zh active
- 1992-04-29 DE DE4214106A patent/DE4214106A1/de not_active Withdrawn
- 1992-04-29 FR FR9205286A patent/FR2688904B1/fr not_active Expired - Fee Related
- 1992-04-29 GB GB9209196A patent/GB2265478B/en not_active Expired - Fee Related
- 1992-04-29 IT ITMI921017A patent/IT1254948B/it active IP Right Grant
- 1992-05-15 JP JP4123538A patent/JPH0643953A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
GB2265478A (en) | 1993-09-29 |
GB2265478B (en) | 1996-01-03 |
JPH0643953A (ja) | 1994-02-18 |
FR2688904B1 (fr) | 1994-06-03 |
ITMI921017A0 (it) | 1992-04-29 |
ITMI921017A1 (it) | 1993-10-29 |
DE4214106A1 (de) | 1993-09-23 |
KR950010284B1 (ko) | 1995-09-12 |
GB9209196D0 (en) | 1992-06-17 |
TW250603B (it) | 1995-07-01 |
FR2688904A1 (fr) | 1993-09-24 |
KR930020658A (ko) | 1993-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970429 |