GB9209196D0 - Reference voltage generating circuit - Google Patents

Reference voltage generating circuit

Info

Publication number
GB9209196D0
GB9209196D0 GB929209196A GB9209196A GB9209196D0 GB 9209196 D0 GB9209196 D0 GB 9209196D0 GB 929209196 A GB929209196 A GB 929209196A GB 9209196 A GB9209196 A GB 9209196A GB 9209196 D0 GB9209196 D0 GB 9209196D0
Authority
GB
United Kingdom
Prior art keywords
reference voltage
generating circuit
voltage generating
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB929209196A
Other versions
GB2265478A (en
GB2265478B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9209196D0 publication Critical patent/GB9209196D0/en
Publication of GB2265478A publication Critical patent/GB2265478A/en
Application granted granted Critical
Publication of GB2265478B publication Critical patent/GB2265478B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Dram (AREA)
GB9209196A 1992-03-18 1992-04-29 Reference voltage generating circuit Expired - Fee Related GB2265478B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920004474A KR950010284B1 (en) 1992-03-18 1992-03-18 Reference voltage generating circuit

Publications (3)

Publication Number Publication Date
GB9209196D0 true GB9209196D0 (en) 1992-06-17
GB2265478A GB2265478A (en) 1993-09-29
GB2265478B GB2265478B (en) 1996-01-03

Family

ID=19330566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9209196A Expired - Fee Related GB2265478B (en) 1992-03-18 1992-04-29 Reference voltage generating circuit

Country Status (7)

Country Link
JP (1) JPH0643953A (en)
KR (1) KR950010284B1 (en)
DE (1) DE4214106A1 (en)
FR (1) FR2688904B1 (en)
GB (1) GB2265478B (en)
IT (1) IT1254948B (en)
TW (1) TW250603B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9423034D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics A reference circuit
DE69521287T2 (en) * 1995-03-24 2002-05-02 Sgs Thomson Microelectronics Circuit arrangement for generating a reference voltage and detection of a supply voltage drop and associated method
KR100496792B1 (en) * 1997-09-04 2005-09-08 삼성전자주식회사 A reference voltage generating circuit
US6242972B1 (en) * 1999-10-27 2001-06-05 Silicon Storage Technology, Inc. Clamp circuit using PMOS-transistors with a weak temperature dependency
KR101133758B1 (en) * 2005-01-19 2012-04-09 삼성전자주식회사 Sensor and thin film transistor array panel including sensor
JP5482126B2 (en) * 2009-11-13 2014-04-23 ミツミ電機株式会社 Reference voltage generating circuit and receiving circuit
CN107015594A (en) * 2017-05-30 2017-08-04 长沙方星腾电子科技有限公司 A kind of bias current generating circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
US4464588A (en) * 1982-04-01 1984-08-07 National Semiconductor Corporation Temperature stable CMOS voltage reference
US4446383A (en) * 1982-10-29 1984-05-01 International Business Machines Reference voltage generating circuit
US4847518A (en) * 1987-11-13 1989-07-11 Harris Semiconductor Patents, Inc. CMOS voltage divider circuits
GB2214333B (en) * 1988-01-13 1992-01-29 Motorola Inc Voltage sources
JP2674669B2 (en) * 1989-08-23 1997-11-12 株式会社東芝 Semiconductor integrated circuit
KR920004587B1 (en) * 1989-10-24 1992-06-11 삼성전자 주식회사 Reference voltage stabilization circuit

Also Published As

Publication number Publication date
ITMI921017A0 (en) 1992-04-29
DE4214106A1 (en) 1993-09-23
IT1254948B (en) 1995-10-11
GB2265478A (en) 1993-09-29
TW250603B (en) 1995-07-01
KR950010284B1 (en) 1995-09-12
JPH0643953A (en) 1994-02-18
FR2688904A1 (en) 1993-09-24
FR2688904B1 (en) 1994-06-03
GB2265478B (en) 1996-01-03
ITMI921017A1 (en) 1993-10-29
KR930020658A (en) 1993-10-20

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000429