KR950001159B1 - 반도체 메모리장치의 박막트랜지스터 및 그 제조방법 - Google Patents

반도체 메모리장치의 박막트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR950001159B1
KR950001159B1 KR1019920006678A KR920006678A KR950001159B1 KR 950001159 B1 KR950001159 B1 KR 950001159B1 KR 1019920006678 A KR1019920006678 A KR 1019920006678A KR 920006678 A KR920006678 A KR 920006678A KR 950001159 B1 KR950001159 B1 KR 950001159B1
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KR
South Korea
Prior art keywords
conductive layer
contact hole
layer
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019920006678A
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English (en)
Korean (ko)
Other versions
KR930015098A (ko
Inventor
김장래
김한수
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019920006678A priority Critical patent/KR950001159B1/ko
Priority to FR9207651A priority patent/FR2685818B1/fr
Priority to GB9213809A priority patent/GB2262838B/en
Priority to ITMI921603A priority patent/IT1255398B/it
Priority to CN92105269A priority patent/CN1032286C/zh
Priority to TW081105179A priority patent/TW212851B/zh
Priority to DE4221420A priority patent/DE4221420A1/de
Priority to US07/906,369 priority patent/US5270968A/en
Priority to JP4187031A priority patent/JPH0773114B2/ja
Publication of KR930015098A publication Critical patent/KR930015098A/ko
Application granted granted Critical
Publication of KR950001159B1 publication Critical patent/KR950001159B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1019920006678A 1991-12-27 1992-04-21 반도체 메모리장치의 박막트랜지스터 및 그 제조방법 Expired - Fee Related KR950001159B1 (ko)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1019920006678A KR950001159B1 (ko) 1991-12-27 1992-04-21 반도체 메모리장치의 박막트랜지스터 및 그 제조방법
FR9207651A FR2685818B1 (fr) 1991-12-27 1992-06-23 Transistor a couches minces pour un dispositif formant memoire a semiconducteur et procede de fabrication de celui-ci.
GB9213809A GB2262838B (en) 1991-12-27 1992-06-29 Thin-film-transistor for semi-conductor memory device and fabricating method therefor
CN92105269A CN1032286C (zh) 1991-12-27 1992-06-30 用于半导体存储器件的薄膜晶体管及其制造方法
ITMI921603A IT1255398B (it) 1991-12-27 1992-06-30 Transistor a film sottile per dispositivo di memoria a semiconduttore e suo procedimento di fabbricazione.
TW081105179A TW212851B (enExample) 1991-12-27 1992-06-30
DE4221420A DE4221420A1 (de) 1991-12-27 1992-06-30 Duennschichttransistor fuer ein halbleiterspeicherbauelement und verfahren zu dessen herstellung
US07/906,369 US5270968A (en) 1991-12-27 1992-06-30 Thin-film transistor for semiconductor memory device and fabricating method thereof
JP4187031A JPH0773114B2 (ja) 1991-12-27 1992-07-14 半導体メモリ装置の薄膜トランジスタおよびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR91-24664 1991-12-27
KR910024664 1991-12-27
KR1019920006678A KR950001159B1 (ko) 1991-12-27 1992-04-21 반도체 메모리장치의 박막트랜지스터 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR930015098A KR930015098A (ko) 1993-07-23
KR950001159B1 true KR950001159B1 (ko) 1995-02-11

Family

ID=26628882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920006678A Expired - Fee Related KR950001159B1 (ko) 1991-12-27 1992-04-21 반도체 메모리장치의 박막트랜지스터 및 그 제조방법

Country Status (9)

Country Link
US (1) US5270968A (enExample)
JP (1) JPH0773114B2 (enExample)
KR (1) KR950001159B1 (enExample)
CN (1) CN1032286C (enExample)
DE (1) DE4221420A1 (enExample)
FR (1) FR2685818B1 (enExample)
GB (1) GB2262838B (enExample)
IT (1) IT1255398B (enExample)
TW (1) TW212851B (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418393A (en) * 1993-11-29 1995-05-23 Motorola, Inc. Thin-film transistor with fully gated channel region
US5700727A (en) * 1995-07-24 1997-12-23 Micron Technology, Inc. Method of forming a thin film transistor
KR100223886B1 (ko) * 1995-12-26 1999-10-15 구본준 반도체소자 및 제조방법
US5905280A (en) 1997-02-11 1999-05-18 Micron Technology, Inc. Capacitor structures, DRAM cell structures, methods of forming capacitors, methods of forming DRAM cells, and integrated circuits incorporating capacitor structures and DRAM cell structures
US6214727B1 (en) * 1997-02-11 2001-04-10 Micron Technology, Inc. Conductive electrical contacts, capacitors, DRAMs, and integrated circuitry, and methods of forming conductive electrical contacts, capacitors, DRAMs, and integrated circuitry
US5918122A (en) * 1997-02-11 1999-06-29 Micron Technology, Inc. Methods of forming integrated circuitry, DRAM cells and capacitors
US6238971B1 (en) 1997-02-11 2001-05-29 Micron Technology, Inc. Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structures
US5981333A (en) 1997-02-11 1999-11-09 Micron Technology, Inc. Methods of forming capacitors and DRAM arrays
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
KR100259078B1 (ko) * 1997-08-14 2000-06-15 김영환 박막트랜지스터 및 이의 제조방법
US6359302B1 (en) 1997-10-16 2002-03-19 Micron Technology, Inc. DRAM cells and integrated circuitry, and capacitor structures
TW400644B (en) * 1998-10-26 2000-08-01 United Microelectronics Corp The structure of Dynamic Random Access Memory(DRAM) and the manufacture method thereof
GB2362755A (en) * 2000-05-25 2001-11-28 Nanogate Ltd Thin film field effect transistor with a conical structure
KR100411813B1 (ko) * 2001-10-11 2003-12-24 한국전력공사 유동제어를 이용한 축열식 전기온돌의 실내온도조절시스템
KR100670140B1 (ko) * 2004-08-26 2007-01-16 삼성에스디아이 주식회사 커패시터
TWI602303B (zh) * 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN104795400B (zh) * 2015-02-12 2018-10-30 合肥鑫晟光电科技有限公司 阵列基板制造方法、阵列基板和显示装置
CN114005838B (zh) * 2021-10-22 2024-02-09 武汉华星光电技术有限公司 一种阵列基板和显示面板
CN118922949A (zh) * 2022-03-18 2024-11-08 株式会社半导体能源研究所 半导体装置、以及半导体装置的制造方法
WO2024209327A1 (ja) * 2023-04-05 2024-10-10 株式会社半導体エネルギー研究所 半導体装置、及び表示装置
WO2024231787A1 (ja) * 2023-05-11 2024-11-14 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法
WO2024246718A1 (ja) * 2023-06-02 2024-12-05 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法
WO2025046389A1 (ja) * 2023-08-25 2025-03-06 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2025094019A1 (ja) * 2023-11-02 2025-05-08 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
WO2025233766A1 (ja) * 2024-05-10 2025-11-13 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59208783A (ja) * 1983-05-12 1984-11-27 Seiko Instr & Electronics Ltd 薄膜トランジスタ
JPS601868A (ja) * 1983-06-17 1985-01-08 Seiko Instr & Electronics Ltd 薄膜トランジスタ
US4820652A (en) * 1985-12-11 1989-04-11 Sony Corporation Manufacturing process and structure of semiconductor memory devices
GB2201544A (en) * 1987-02-27 1988-09-01 Philips Electronic Associated Vertical thin film transistor
JPH01231376A (ja) * 1988-03-11 1989-09-14 Nec Corp 薄膜トランジスタおよびその製造方法
US5210429A (en) * 1990-06-29 1993-05-11 Sharp Kabushiki Kaisha Static RAM cell with conductive straps formed integrally with thin film transistor gates

Also Published As

Publication number Publication date
JPH0773114B2 (ja) 1995-08-02
ITMI921603A0 (it) 1992-06-30
CN1073806A (zh) 1993-06-30
ITMI921603A1 (it) 1993-12-30
DE4221420A1 (de) 1993-07-01
CN1032286C (zh) 1996-07-10
FR2685818A1 (fr) 1993-07-02
US5270968A (en) 1993-12-14
JPH0653440A (ja) 1994-02-25
IT1255398B (it) 1995-10-31
KR930015098A (ko) 1993-07-23
GB2262838A (en) 1993-06-30
TW212851B (enExample) 1993-09-11
GB9213809D0 (en) 1992-08-12
GB2262838B (en) 1995-09-06
FR2685818B1 (fr) 1994-04-15

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