KR940004515B1 - 다이나믹형 반도체 메모리장치 - Google Patents

다이나믹형 반도체 메모리장치 Download PDF

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Publication number
KR940004515B1
KR940004515B1 KR1019910004966A KR910004966A KR940004515B1 KR 940004515 B1 KR940004515 B1 KR 940004515B1 KR 1019910004966 A KR1019910004966 A KR 1019910004966A KR 910004966 A KR910004966 A KR 910004966A KR 940004515 B1 KR940004515 B1 KR 940004515B1
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KR
South Korea
Prior art keywords
pair
sense amplifier
data
transistors
channel mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019910004966A
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English (en)
Korean (ko)
Inventor
다카시 오사와
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
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Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Application granted granted Critical
Publication of KR940004515B1 publication Critical patent/KR940004515B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
KR1019910004966A 1990-03-30 1991-03-29 다이나믹형 반도체 메모리장치 Expired - Lifetime KR940004515B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-084609 1990-03-30
JP02084609A JP3101297B2 (ja) 1990-03-30 1990-03-30 半導体メモリ装置

Publications (1)

Publication Number Publication Date
KR940004515B1 true KR940004515B1 (ko) 1994-05-25

Family

ID=13835437

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004966A Expired - Lifetime KR940004515B1 (ko) 1990-03-30 1991-03-29 다이나믹형 반도체 메모리장치

Country Status (5)

Country Link
US (1) US5323345A (https=)
EP (1) EP0449204B1 (https=)
JP (1) JP3101297B2 (https=)
KR (1) KR940004515B1 (https=)
DE (1) DE69120447T2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940007639B1 (ko) * 1991-07-23 1994-08-22 삼성전자 주식회사 분할된 입출력 라인을 갖는 데이타 전송회로
KR940007640B1 (ko) * 1991-07-31 1994-08-22 삼성전자 주식회사 공통 입출력선을 가지는 데이타 전송회로
US5283760A (en) * 1991-08-14 1994-02-01 Samsung Electronics Co., Ltd. Data transmission circuit
EP0579862A1 (de) * 1992-07-24 1994-01-26 Siemens Aktiengesellschaft Integrierte Halbleiterspeicheranordnung
US5539701A (en) * 1994-08-05 1996-07-23 Nippon Steel Corporation Sense circuit for semiconductor memory devices
TW299448B (https=) * 1995-07-20 1997-03-01 Matsushita Electric Industrial Co Ltd
KR0164359B1 (ko) * 1995-09-06 1999-02-18 김광호 싸이클시간을 감소시키기 위한 반도체 메모리 장치
DE19536486C2 (de) * 1995-09-29 1997-08-07 Siemens Ag Bewerter- und Verstärkerschaltung
KR0153602B1 (ko) * 1995-10-04 1998-12-01 김광호 반도체 메모리 장치의 데이타 고속 전송회로
JP2000132969A (ja) 1998-10-28 2000-05-12 Nec Corp ダイナミックメモリ装置
JP2001006367A (ja) * 1999-06-21 2001-01-12 Mitsubishi Electric Corp 半導体記憶装置
JP2004095017A (ja) * 2002-08-30 2004-03-25 Fujitsu Ltd センスアンプ
CN100354971C (zh) 2002-11-08 2007-12-12 株式会社日立制作所 半导体存储装置
JP2004213830A (ja) * 2003-01-08 2004-07-29 Sony Corp 半導体記憶装置
KR100546373B1 (ko) * 2003-08-28 2006-01-26 삼성전자주식회사 기준셀을 사용하지 않는 ｖｓｓ／ｖｄｄ 비트라인프리차지 스킴을 갖는 반도체 메모리장치
KR100753418B1 (ko) * 2006-03-30 2007-08-30 주식회사 하이닉스반도체 로우 및 컬럼 어드레스를 이용하여 비트라인 감지 증폭동작을 제어하는 반도체 메모리 장치
CN115735250B (zh) * 2020-07-23 2026-01-09 华为技术有限公司 一种位线读取电路及存储器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132930A (en) * 1986-07-31 1992-07-21 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic memory device having multiple flip-flop circuits selectively coupled to form sense amplifiers specific to neighboring data bit lines
JPS63175293A (ja) * 1987-01-16 1988-07-19 Hitachi Ltd ダイナミツク型ｒａｍ
JPH0799627B2 (ja) * 1987-01-23 1995-10-25 松下電器産業株式会社 半導体メモリの書き込み読み出し回路
JPS63183687A (ja) * 1987-01-26 1988-07-29 Hitachi Ltd 半導体記憶装置
JPS6414792A (en) * 1987-07-08 1989-01-18 Hitachi Ltd Semiconductor storage device
JPH07105137B2 (ja) * 1987-11-17 1995-11-13 日本電気株式会社 半導体メモリ
JPH01199393A (ja) * 1988-02-03 1989-08-10 Mitsubishi Electric Corp 半導体記憶装置
US4954992A (en) * 1987-12-24 1990-09-04 Mitsubishi Denki Kabushiki Kaisha Random access memory having separate read out and write in bus lines for reduced access time and operating method therefor
JPH01173392A (ja) * 1987-12-28 1989-07-10 Toshiba Corp 半導体記憶装置
JP2644261B2 (ja) * 1988-03-15 1997-08-25 株式会社東芝 ダイナミック型半導体記憶装置
JPH01264692A (ja) * 1988-04-15 1989-10-20 Hitachi Ltd 半導体メモリ回路
JPH0214487A (ja) * 1988-06-30 1990-01-18 Mitsubishi Electric Corp 半導体記憶装置
US5023842A (en) * 1988-07-11 1991-06-11 Kabushiki Kaisha Toshiba Semiconductor memory having improved sense amplifiers
JP2681285B2 (ja) * 1988-09-19 1997-11-26 富士通株式会社 半導体記憶装置
US5146427A (en) * 1989-08-30 1992-09-08 Hitachi Ltd. High speed semiconductor memory having a direct-bypass signal path

Also Published As

Publication number Publication date
JP3101297B2 (ja) 2000-10-23
EP0449204B1 (en) 1996-06-26
DE69120447T2 (de) 1996-12-05
DE69120447D1 (de) 1996-08-01
JPH03283186A (ja) 1991-12-13
EP0449204A3 (https=) 1994-01-05
EP0449204A2 (en) 1991-10-02
US5323345A (en) 1994-06-21

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