KR930020589A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR930020589A
KR930020589A KR1019930004873A KR930004873A KR930020589A KR 930020589 A KR930020589 A KR 930020589A KR 1019930004873 A KR1019930004873 A KR 1019930004873A KR 930004873 A KR930004873 A KR 930004873A KR 930020589 A KR930020589 A KR 930020589A
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South Korea
Prior art keywords
semiconductor device
insulating film
manufacturing
matrix
mesh
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KR1019930004873A
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English (en)
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KR970003724B1 (ko
Inventor
싱이찌 이마이
유카 테라이
마사노리 후쿠모토
코사꾸 야노
히로유키 우미도토
신지 오다나카
야스오 미즈노
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모리시타 요이찌
마쯔시다덴기산교 가부시기가이샤
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Publication of KR930020589A publication Critical patent/KR930020589A/ko
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Publication of KR970003724B1 publication Critical patent/KR970003724B1/ko

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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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  • Mechanical Engineering (AREA)
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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은, 반도체장치의 절연막을 평탄화하기 위하여 플로시키는 온도를 저하시켜, 반도체장치의 특성을 양호하게 유지하는 것을 목적으로 한 것으로써, 그 구성에 있어서, 절연막이 실리콘산화막계의 경우, 절연막의 매트릭스의 주요소가 되는 실리콘원자Si와 부요소가 되는 산화원자 0에 의해서 그물코구조가 형성되어 있다. 이 매트릭스의 부요소인 산소원자 0를 비가교형원소로 이루어진 비가교요소 예를들면 1가 원소인 불소F등의 할로겐원자에 의해서 치환한다. 이에의해, 산호원자 0를 개재한 실리콘 원자 Si-Si간의 가교를 이 부위에서 절단하고, 절연막의 점성을 저하시키고, 플로온도를 저하시킨다. 예를들면 BPSG 막내부의 일부의 산호 0를 불소 F에 의해서 치환해서 FBPSG막으로 하였을 경우, 플로온도가 900℃에서부터 850℃로 저하하고, 반도체장치의 쇼트채널효과를 발생시키지 않는 온도에서, 중간절연막을 플로시킬 수 있는 것을 특징으로 한 것이다.

Description

반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1실시예에 있어서의 반도체장치의 구조를 표시한 단면도.
제2도는 제1실시예에 있어서의 FBPSG막을 제조하기 위한 CVD 장치의 구성을 개략적으로 표시한 도면.
제3도는 제1실시예에 있어서의 원료가스인 FTES의 분지구조식을 표시한 도면.

Claims (20)

  1. 반도체기판위에 절연막을 가진 반도체장치에 있어서, 상기 절연막은, 적어도 1종류의 원소로 이루어진 주요소와 적어도 1종류의 원소로 이루어진 부요소가 그물코 형상으로 결합해서 이루어진 매트릭스와, 상기 부요소중 일부의 부요소와 치환해서 상기 주요소에 결합하고, 매트릭스의 그물코를 부분적으로 절단하는 적어도 1종류의 비가교형원소로 이루어진 비가교요소에 의해 구성되어 있는 것을 특징으로 하는 반도체 장치.
  2. 제1항에 있어서, 상기 비가교형 원소는 할로겐원소인 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 비가교형원소는 불소인 것을 특징으로 한는 반도체장치.
  4. 제1항, 제2항 또는 제3항에 있어서, 주요소는 실리콘원자로 이루어지고, 부요소는 산소원자로 이루어지고, 상기 절연막의 매트릭스는, 실리콘원자와 산소원자가 그물코형상으로 결합한 실리콘산화막으로 구성되어 있는 것을 특징으로 하는 반도체 장치.
  5. 제4항에 있어서, 상기 절연막의 매트릭스를 구성하는 실리콘산화막내부에서, 그물코속의 일부의 실리콘원자가 인, 붕소 및 비소중 적어도 1종류의 원자에 의해서 치환되어 있는 것을 특징으로 하는 반도체 장치.
  6. 제1항, 제2항, 제3항, 제4항 또는 제5항에 있어서, 절연막은 충간절연막인 것을 특징으로 하는 반도체 장치.
  7. 반도체기판위에, 그물코형상의 매트릭스를 가진절연막을 구비한 반도체장치의 제조방법으로서, 적어도 1종류의 원소로 이루어진 주요소와, 적어도 1종류의 원소로 이루어진 부요소와, 이 두요소중 일부의 부요소에 치환해서 상기 주요소에 직접 결합하는 적어도 1종류의 비가교형원소로 이루어진 비가교요소를 분자구조속에 가진 기체분자를 주성분으로서 함유한 원료가스를 사용해서, 화학적기상성장법에 의해, 반도체기판위에 원료가스의 고화물을 퇴적하는 공정과, 상기 고화물을 가열처리하는 공정을 포함하고, 상기 주요소와 부요소로 구성되는 매트릭스의 그물코가 상기 비가교요소와 부요소와의 치환에 의해서 부분적으로 절단되어서 이루어진 절연막을 상기 반도체기판위에 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
  8. 제7항에 있어서, 상기 반도체기판위에 원료가스의 고화물을 퇴적하는 공정과, 상기 고화물을 가열 처리하는 공정을 동시에 행하는 것을 특징으로 하는 반도체장치의 제조방법.
  9. 제7항 또는 제8항에 있어서, 비가교형원소는 할로겐원소인 것을 특징으로 하는 반도체장치의 제조방법.
  10. 제9항에 있어서, 상기 원료가스의 주성분은, SiH₂F₂ㆍSiH₂CI₂ㆍSiHF 및 SiH₃CI중 적어도 1개로부터 선택하는 것을 특징으로 하는 반도체장치의 제조방법.
  11. 제9항에 있어서, 상기 원료가스의 주성분은, 하기 분자식
    F-Si-(OC₂)₃
    로 표시되는 화합물의 분자인 것을 특징으로 하는 반도체장치의 제조방법.
  12. 제9항에 있어서, 원료가스는, 하기분자식
    F₂-Si-(OC₂)₂
    로 표시되는 화합물의 분자인 것을 특징으로 하는 반도체장치의 제조방법.
  13. 제9항, 제10항, 제11항 또는 제12항에 있어서, 원료가스에는, 부성분으로서 SiH₄또는 TEOS가 첨가되어 있는 것을 특징으로 하는 반도체장치의 제조방법.
  14. 제9항, 제10항, 제11항, 제12항 또는 제13항에 있어서, 원료가스에는, 부성분으로서 인소스가스, 붕소소스가스 및 비소소스가스중 적어도 1종류의 가스가 첨가되어 있는 것을 특징으로 하는 반도체장치의 제조방법.
  15. 반도체기판 위에 적어도 1종류의 원소로 이루어진 주요소와 적어도 1종류의 원소로 이루어진 부요소를 함유한 그물코형상의 매트릭스를 가진 절연막을 구비한 반도체장치의 제조방법으로서, 반도체기판위에, 주요소와 부요소가 그물코형상으로 결합해서 이루어진 매트릭스를 가진 절연막을 형성하는 공정과, 상기 절연막내부에, 상기 주요소에 결합가능한 단일 또는 복수의 비가교형원소로 이루어진 비가교요소를 이온상태로 주입하는 공정과, 상기 비가교요소가 주입된 절연막 열처리하는 공정을 가지고, 반도체기판위에, 상기 비가교요소에 의해서 그물코가 부분적으로 절단된 매트릭스를 가진 절연막을 형성하는 것을 특징으로 하는 반도체장치의 제조방법.
  16. 제15항에 있어서, 비가교형원소는 할로겐원소인 것을 특징으로 하는 반도체장치의 제조방법.
  17. 제16항에 있어서, 비가교형원소는 불소인 것을 특징으로 하는 반도체장치의 제조방법.
  18. 제15항, 제16항 또는 제17항에 있어서, 주요소는 실리콘원자로 이루어지고, 부요소는 산소원자로 이루어지고, 상기 절연막의 매트릭스는, 실리콘원자와 산소원자가 그물코형상으로 결합한 실리콘산화막으로 구성되어 있는 것을 특징으로 하는 반도체장치의 제조방법.
  19. 제18항에 있어서, 절연막의 매트릭스내부의 주요소중 일부의 주요소를 인, 붕소 및 비소중 적어도 1종류의 원소의 원자와 치환시키는 공정을 포함한 것을 특징으로 하는 반도체장치의 제조방법.
  20. 제8항, 제9항, 제10항, 제11항, 제12항, 제13항, 제14항, 제15항, 제16항, 제17항 제18항 또는 제19항에 있어서, 절연막은 충간절연막인 것을 특징으로 하는 반도체장치의 제조방법.
    ※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930004873A 1992-03-27 1993-03-27 반도체 장치 및 그 제조방법 KR970003724B1 (ko)

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Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07169833A (ja) * 1993-12-14 1995-07-04 Nec Corp 半導体装置及びその製造方法
TW302525B (ko) * 1995-02-28 1997-04-11 Hitachi Ltd
KR0179292B1 (ko) * 1996-04-12 1999-04-15 문정환 반도체소자의 다층배선 형성방법
US7763327B2 (en) 1996-04-22 2010-07-27 Micron Technology, Inc. Methods using ozone for CVD deposited films
JP2983476B2 (ja) * 1996-10-30 1999-11-29 キヤノン販売株式会社 成膜方法及び半導体装置の製造方法
US5763021A (en) * 1996-12-13 1998-06-09 Cypress Semiconductor Corporation Method of forming a dielectric film
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
US6057250A (en) * 1998-01-27 2000-05-02 International Business Machines Corporation Low temperature reflow dielectric-fluorinated BPSG
JPH11288893A (ja) 1998-04-03 1999-10-19 Nec Corp 半導体製造装置及び半導体装置の製造方法
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
JP2000077402A (ja) * 1998-09-02 2000-03-14 Tokyo Electron Ltd プラズマ処理方法および半導体装置
US6727190B2 (en) * 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
US6159870A (en) * 1998-12-11 2000-12-12 International Business Machines Corporation Borophosphosilicate glass incorporated with fluorine for low thermal budget gap fill
US6261975B1 (en) * 1999-03-04 2001-07-17 Applied Materials, Inc. Method for depositing and planarizing fluorinated BPSG films
CN1301537C (zh) * 1999-04-16 2007-02-21 国际商业机器公司 制作掺氟的硼磷硅玻璃的方法
US6054397A (en) * 1999-07-28 2000-04-25 Promos Technologies Inc. BPSG planarization method having improved planarity and reduced chatter mark defects
US6514876B1 (en) * 1999-09-07 2003-02-04 Steag Rtp Systems, Inc. Pre-metal dielectric rapid thermal processing for sub-micron technology
US6348706B1 (en) * 2000-03-20 2002-02-19 Micron Technology, Inc. Method to form etch and/or CMP stop layers
JP2001284347A (ja) 2000-03-31 2001-10-12 Canon Sales Co Inc 成膜方法及び半導体装置の製造方法
KR100503951B1 (ko) * 2003-04-30 2005-07-26 주식회사 하이닉스반도체 반도체 소자의 제조 방법
US20110175184A1 (en) * 2010-01-21 2011-07-21 Fujifilm Corporation Solid-state imaging device and method of manufacturing solid-state imaging device
US20150048477A1 (en) * 2013-08-16 2015-02-19 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
US10199388B2 (en) 2015-08-27 2019-02-05 Applied Mateerials, Inc. VNAND tensile thick TEOS oxide

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB476837I5 (ko) * 1974-06-06 1976-01-20
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
GB8401250D0 (en) * 1984-01-18 1984-02-22 British Telecomm Semiconductor fabrication
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
JP2557898B2 (ja) * 1987-07-31 1996-11-27 株式会社東芝 半導体装置
US5180692A (en) * 1988-03-30 1993-01-19 Tokyo Electron Limited Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride
US4962063A (en) * 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
EP0712162A2 (en) * 1989-07-18 1996-05-15 Sony Corporation A nonvolatile semiconductor memory device and method of manufacturing thereof
US5314845A (en) * 1989-09-28 1994-05-24 Applied Materials, Inc. Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer
NL9001770A (nl) * 1990-08-06 1992-03-02 Philips Nv Werkwijze voor het aanbrengen van een siliciumdioxide-laag op een substraat door middel van chemische reactie uit de dampfase bij verlaagde druk (lpcvd).
JPH053258A (ja) * 1990-09-25 1993-01-08 Kawasaki Steel Corp 層間絶縁膜の形成方法
KR960010334B1 (en) * 1990-09-25 1996-07-30 Matsushita Electric Ind Co Ltd Fabricating method of semiconductor device
JP2864806B2 (ja) * 1990-09-25 1999-03-08 松下電器産業株式会社 半導体装置の製造方法
JP2697315B2 (ja) * 1991-01-23 1998-01-14 日本電気株式会社 フッ素含有シリコン酸化膜の形成方法
JPH04341568A (ja) * 1991-05-16 1992-11-27 Toshiba Corp 薄膜形成方法及び薄膜形成装置
JPH05226480A (ja) * 1991-12-04 1993-09-03 Nec Corp 半導体装置の製造方法

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