KR880002272A - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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KR880002272A
KR880002272A KR1019870006975A KR870006975A KR880002272A KR 880002272 A KR880002272 A KR 880002272A KR 1019870006975 A KR1019870006975 A KR 1019870006975A KR 870006975 A KR870006975 A KR 870006975A KR 880002272 A KR880002272 A KR 880002272A
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semiconductor layer
manufacturing
amorphous
layer
semiconductor device
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KR950003917B1 (ko
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마사요시 사사끼
데루오 가또오
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하사모도 나미오
오끼뎅끼 고오교오 가부시끼가이샤
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Abstract

내용 없음

Description

반도체장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 따른 반도체 장치를 보여주는 단면도.
제 2 도는 (제2a도) 내지 (제2d도)는 제 1 도에 보여진 반도체 장치의 제조도중 여러단계들을 보여주는 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 실리콘 기판 6 : 폴리실리콘층
8 : 폴리실리콘드레인 25 : 폴리실리콘드레인
27 : 폴리실리콘 게이트전극

Claims (10)

  1. 반도체장치 제조방법으로서 (a) 기판 위에 비결정질 반도체층을 형성하고 (b)비결정질 반도체층을 강화처리하기 위하여 비결정질 반도체층의 열처리를 하고 (c)는 그 강화처리된 비결정질 반도체층을 다결정 반도체층으로 바꾸기 위해 강화처리된 비결정된 반도체층의 열처리를 하고 (d) 다 결정 반도체층을 사용해서 MOS 트랜지스터를 형성하는 단계들로 이루어지는 반도체장치의 제조방법.
  2. 제 1 항에 있어서, 반도체 재료가 실리콘인 반도체 장치의 제조방법.
  3. 제 2 항에 있어서, 비결정질 실리콘층 형성은 약 10-5Pa를 넘지 않는 진공에서 200℃넘지 않는 기판온도에서 50nm/분 보다 적지 않은 부착율로 진공증기 부착에 의해 이루어지는 반도체장치의 제조방법.
  4. 제 2 항에 있어서, 비결정질 실리콘을 강화처리하기 위한 열처리가 이전 단계의 진공 부착으로부터 유지된 동일 진공에서 약 300~450℃의 기판 온도에서 약 10분 ~1시간 동안 수행되는 반도체장치의 제조방법.
  5. 제 2 항에 있어서, 결정화를 위한 열처리가 약 550℃~650℃의 온도에서 약 3~25시간동안 수행되는 반도체장치의 제조방법.
  6. 제 2 항에 있어서, 비 결정질 실리콘층의 형성이 실리콘 부착에 의해 수행되고 인, 비소, 붕소, 안티몬 또는 갈륨으로 이루어지는 불순물이 실리콘 부착동안 도우프되는 반도체장치의 제조방법.
  7. 제 6 항에 있어서 불순물은 붕소로 이루어지고 약 1016~1018atoms/cc의 불순물 농도를 가진 비결정질 실리콘의 첫번째 층을 부착하기 위하여 부착이 수행되고 계속해서 약 1013~1616atoms/cc의 불순물 농도를 가진 비 결정질 실리콘의 다른 층을 부착하기 위해 부착이 수행되는 반도체 장치의 제조방법.
  8. 제 1 항에 있어서 MOS트랜지스터를 형성하는 단계가 다결정 반도체층의 요구된 패턴을 생산하기 위해 다결정 반도체층을 포토에칭하는 것과 불순물을 가진 다결정 반도체층을 도우프하는 것으로 구성되는 반도체 장치의 제조방법.
  9. 제 1 항에 있어서 기판은 부분적으로 또는 전체가 절연층으로 덮인 반도체 기판이거나 또는 그 자체가 절연물인 반도체 장치의 제조방법.
  10. 다결정 반도체층 제조방법으로서 (a) 기판 위에 비결정질 반도체층을 형성하고 (b)비결정질 반도체층을 강화처리 하기 위하여 비결정질 반도체층의 열처리를 하고 (c)강화처리된 비결정질 반도체층을 다결정 반도체층으로 바꾸기 위해 강화처리된 비결정된 반도체층의 열처리를 하는 단계들로 이루어지는 반도체장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870006975A 1986-07-02 1987-07-01 반도체장치의 제조방법 KR950003917B1 (ko)

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JP61154135A JPS6310573A (ja) 1986-07-02 1986-07-02 半導体装置の製造方法
JP86-154135 1986-07-02
JP154135 1986-07-02

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KR880002272A true KR880002272A (ko) 1988-04-30
KR950003917B1 KR950003917B1 (ko) 1995-04-20

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US4814292A (en) 1989-03-21
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