KR930015002A - 반도체 메모리 장치 및 그 제조방법 - Google Patents

반도체 메모리 장치 및 그 제조방법 Download PDF

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Publication number
KR930015002A
KR930015002A KR1019910023394A KR910023394A KR930015002A KR 930015002 A KR930015002 A KR 930015002A KR 1019910023394 A KR1019910023394 A KR 1019910023394A KR 910023394 A KR910023394 A KR 910023394A KR 930015002 A KR930015002 A KR 930015002A
Authority
KR
South Korea
Prior art keywords
forming
material layer
storage electrode
memory device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019910023394A
Other languages
English (en)
Korean (ko)
Inventor
이태우
이양구
임병학
박동건
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910023394A priority Critical patent/KR930015002A/ko
Priority to GB9226294A priority patent/GB2262657B/en
Priority to DE4242840A priority patent/DE4242840A1/de
Priority to US07/992,659 priority patent/US5441908A/en
Priority to JP4339292A priority patent/JPH0821697B2/ja
Publication of KR930015002A publication Critical patent/KR930015002A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1019910023394A 1991-12-18 1991-12-18 반도체 메모리 장치 및 그 제조방법 Ceased KR930015002A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910023394A KR930015002A (ko) 1991-12-18 1991-12-18 반도체 메모리 장치 및 그 제조방법
GB9226294A GB2262657B (en) 1991-12-18 1992-12-17 Semiconductor memory device and a manufacturing method therefor
DE4242840A DE4242840A1 (https=) 1991-12-18 1992-12-17
US07/992,659 US5441908A (en) 1991-12-18 1992-12-18 Capacitor of a semiconductor device having increased effective area
JP4339292A JPH0821697B2 (ja) 1991-12-18 1992-12-18 半導体メモリ装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023394A KR930015002A (ko) 1991-12-18 1991-12-18 반도체 메모리 장치 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR930015002A true KR930015002A (ko) 1993-07-23

Family

ID=19325168

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023394A Ceased KR930015002A (ko) 1991-12-18 1991-12-18 반도체 메모리 장치 및 그 제조방법

Country Status (5)

Country Link
US (1) US5441908A (https=)
JP (1) JPH0821697B2 (https=)
KR (1) KR930015002A (https=)
DE (1) DE4242840A1 (https=)
GB (1) GB2262657B (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5452244A (en) * 1994-08-10 1995-09-19 Cirrus Logic, Inc. Electronic memory and methods for making and using the same
US5534457A (en) * 1995-01-20 1996-07-09 Industrial Technology Research Institute Method of forming a stacked capacitor with an "I" shaped storage node
US5707897A (en) * 1996-05-16 1998-01-13 Taiwan Semiconductor Manufacturing Company Ltd. Non-volatile-memory cell for electrically programmable read only memory having a trench-like coupling capacitors
US5753551A (en) * 1996-11-25 1998-05-19 Vanguard International Semiconductor Corporation Memory cell array with a self-aligned, buried bit line
US5780339A (en) * 1997-05-02 1998-07-14 Vanguard International Semiconductor Corporation Method for fabricating a semiconductor memory cell in a DRAM
US5970358A (en) * 1997-06-30 1999-10-19 Micron Technology, Inc. Method for forming a capacitor wherein the first capacitor plate includes electrically coupled conductive layers separated by an intervening insulative layer
US6235571B1 (en) * 1999-03-31 2001-05-22 Micron Technology, Inc. Uniform dielectric layer and method to form same
US6472268B1 (en) * 2001-11-01 2002-10-29 Hynix Semiconductor, Inc. Method for forming storage node contact

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723530B2 (ja) * 1988-04-13 1998-03-09 日本電気株式会社 ダイナミック型ランダムアクセスメモリ装置の製造方法
US4958318A (en) * 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
JPH02263467A (ja) * 1989-04-04 1990-10-26 Sony Corp メモリ装置
JPH02312269A (ja) * 1989-05-26 1990-12-27 Toshiba Corp 半導体記憶装置およびその製造方法
JPH0376159A (ja) * 1989-08-18 1991-04-02 Sony Corp 半導体メモリ
JP2894740B2 (ja) * 1989-09-25 1999-05-24 日本電気株式会社 Ｍｏｓ型半導体装置
KR930005741B1 (ko) * 1990-11-01 1993-06-24 삼성전자 주식회사 터널구조의 디램 셀 및 그의 제조방법
JPH0430464A (ja) * 1990-05-25 1992-02-03 Fujitsu Ltd 半導体装置及びその製造方法
EP0480411A1 (en) * 1990-10-10 1992-04-15 Micron Technology, Inc. Stacked capacitor DRAM
US5234857A (en) * 1991-03-23 1993-08-10 Samsung Electronics, Co., Ltd. Method of making semiconductor device having a capacitor of large capacitance

Also Published As

Publication number Publication date
GB9226294D0 (en) 1993-02-10
JPH0821697B2 (ja) 1996-03-04
GB2262657A (en) 1993-06-23
US5441908A (en) 1995-08-15
GB2262657B (en) 1995-11-01
JPH06181295A (ja) 1994-06-28
DE4242840A1 (https=) 1993-06-24

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Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19911218

PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19911218

Comment text: Request for Examination of Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19941130

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 19950520

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 19941130

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 19950617

WITB Written withdrawal of application