KR920701534A - 반도체 웨이퍼 처리장치 및 방법 - Google Patents

반도체 웨이퍼 처리장치 및 방법

Info

Publication number
KR920701534A
KR920701534A KR1019910700013A KR910700013A KR920701534A KR 920701534 A KR920701534 A KR 920701534A KR 1019910700013 A KR1019910700013 A KR 1019910700013A KR 910700013 A KR910700013 A KR 910700013A KR 920701534 A KR920701534 A KR 920701534A
Authority
KR
South Korea
Prior art keywords
support
workpiece
substrate
exhaust
gas
Prior art date
Application number
KR1019910700013A
Other languages
English (en)
Other versions
KR0166973B1 (ko
Inventor
비쎄르 얀
Original Assignee
프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프레데릭 얀 스미트, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 프레데릭 얀 스미트
Priority claimed from PCT/NL1990/000063 external-priority patent/WO1990013687A2/en
Publication of KR920701534A publication Critical patent/KR920701534A/ko
Application granted granted Critical
Publication of KR0166973B1 publication Critical patent/KR0166973B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/136—Associated with semiconductor wafer handling including wafer orienting means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Tunnel Furnaces (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Forging (AREA)
  • Containers, Films, And Cooling For Superconductive Devices (AREA)
  • Furnace Details (AREA)

Abstract

내용 없음

Description

반도체 웨이퍼 처리장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 기판 처리 장치의 개략 단면도이다, 제2도는 제1도의 장치 일부를 형성하는 기판지지부의 개략 확대 측단면도이다, 제3도 및 제4도는 기판 지지부의 표면의 일부분에 걸친 주입 구멍과 배기 구멍의 분포의 예를 도시하는 도시도이다.

Claims (19)

  1. 기판(10)과 지지면(11b)사이에 열교환 가스 쿠션을 형성하기 위해 기판과 지지면사이에 가스가 공급될 수 있고, 주입 공간(12)과 보조 가스 유입구(28)와 연통되는 다수의 주입구멍(20)이 몸체(11a)를 갖는 기판지지부(11)가 제공된 진공 챔버(2a, 2b)를 포함하며, 감소 압력하에서 평 기판(10)특히 반도체 웨이퍼를 처리하는 장치에 있어서, 상기 가스쿠션을 유지하는 동안에 각각의 주입구멍을 통해 주입된 가스가 인접 배기 구멍을 통해 배기되도록 기판(10)과 지지면(11b)으로부터 나오는 가스가 배기될 수 있는 배기 공간(24)과 배기출구(18)와 연통되는 다수의 배기구멍(29)이 지지면(11b)에 존재하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  2. 제1항에 있어서, 상기 주입구멍은 상호 동일하며 상기 지지부의 표면의 단위 표면적당 제1위치밀도에 따라 분포되고, 상기 배기 구멍의 적어도 주요부분은 상호 동일하며 표면의 단위 표면적당 제2위치 밀도에 따라 분포되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  3. 제2항에 있어서, 상기 주입구멍의 제1밀도는 표면상에서 실질적으로 일정하고, 상기 배기구멍의 제2밀도 또한 표면상에서 실질적으로 일정한 것을 특징으로 하는 반도체 웨이퍼 처리 장치.
  4. 제3항에 있어서, 상기 구멍의 제1밀도는 상기 구멍의 제2밀도와 실질적으로 동일한 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  5. 제2항에 있어서, 상기 주입구멍의 제1밀도와 상기 배기구멍의 제2밀도중에서 적어도 하나의 밀도는 상기 기판과 상기 지지부사이의 열교환을 국부적으로 수정하고 처리 조건으로부터 발생되는 기판의 온도 차이를 교정하기 위해서 지지부 표면상의 위치의 함수로서 변화되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  6. 제1항에 어서, 상기 다수의 구멍중의 적어도 하나의 구멍의 직경은 기판과 지지부사이의 온도 차이를 국부적으로 수정하기 위하여 지지부 표면상의 위치의 함수로서 변화되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  7. 제1항 내지 제항 중 어느 한 항에 있어서, 전체 100개와 200개 사이에 대하여 주입 구멍의 직경은 0.5㎜와 0.2㎜사이에 있고 양호하게는 0.1㎜에 가까우며, 배기구멍의 직경은 1㎜와 3㎜사이에 있는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 기판이 놓이는 지지부 표면은 적어도 하나의 보조 배기구멍에 의해 배기공간과 연통되는 주변 홈을 포함하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  9. 제1항 내지 제8항 중 어느 한 항에 있어서, 상기 기판 지지부는 가열 및 냉각수단을 갖는 몸체부가 가열되는 동안에 냉각되는 보조부가 제공된 몸체를 포함하며, 또한 상기 보조부는, 가열되는 몸체 부근에 지지부의 지지표면에 대향 위치되지만, 튜브로부터 필요에 따라 연속적으로 진공과 주어진 유체의 압력이 보조공간내에 형성될 수 있는 상기 튜브에 연결된 보조공간에 의해 몸체부로부터 분리되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  10. 공작물을 위한 지지면을 구성하는 작업물 지지부와 작업물 지지부를 위한 가열 및 냉각수단과 상기 지지면에 연하여 분포되고 상기 지지면 내로 들어가며 분배공간과 연통되는 다수의 유출구명과 지지며노가 작업물 사이에 열전달 가스 쿠션을 형성하기 위하여 분배 공간과 유출 구멍을 거쳐 가스를 공급하기 위해 분배 공간에 연결된 가스 유입구를 포함하며, 특히, 진공 장치내에서 표면 철되는 디스크형 작업물용 지지대에 있어서, 상기 유출구멍(258)에 추가하여, 가스 배기출구가 연결된 가스 배기공간(260)과 연통되는 다수의 배기구멍(259)이 지지면 내로 들어가는 것을 특징으로 하는 디스크형 작업물용 지지대.
  11. 제10항에 있어서, 상기 유출구멍(258)은 상호 동일한 것을 특징으로 하는 디스크형 작업물용 지지대.
  12. 제11항에 있어서, 상기 유출구멍(258)은 작업물 지지부(205)에 연하여 규칙적으로 분포되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  13. 제10항, 제11항 또는 제12항에 있어서, 상기 배기구멍(259)의 대부분은 같은 방식으로 형성된 것을 특징으로 하는 디스크형 작업물용 지지대.
  14. 제13항에 있어서, 상기 배기구멍의 대부분은 상기 작업물 지지부(205)에 연하여 균일하게 분포되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  15. 제10항 내지 제13항 중 어느 한 항에 있어서, 상기 지지면으로부터 볼 때에, 상기 가스 배기공간(260)은 상기 분배공간(252)아래에 위치되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  16. 제10항 내지 제15항중 어느 한 항에 있어서, 상기 배기구멍은 덮개판(255)을 통해서 상기 작업물 지지부(205)의 주변을 따라 연장된 홈(261)으로서 상기 작업물 지지부(205)의 주변을 따라 형성되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  17. 제16항에 있어서, 상기 홈(261)은 판(251)을 통해 연장되는 것을 특징으로 하는 디스크형 작업물용 지지대.
  18. 제10항 내지 제17항중 적어도 한 항에서 청구된 하나 이상의 작업물 지지대를 포함하는 것을 특징으로하는 작업물 처리용 진공 처리 챔버.
  19. 기판(10)과 지지면(11b)사이에 열교환 가스쿠션을 형성하기 위해 기판과 지지면 사이에 가스가 공급될 수 있고, 주입공간(12)과 보조 가스 유입구(28)와 연통되는 다수의 주입구멍(20)이 존재하는 지지면(11b)과 가열 및 냉각수단(12)을 가진 몸체(11a)를 갖는 기판 지지부(11)가 제공된 진공 챔버(2a,2b)내에서, 집적 회로 제조에 있어서, 평 기판 특히 반도체 웨이퍼가 감소 압력하에서 처리되는 전자 소자 제조 방법에 있어서, 상기 가스 쿠션을 유지하면서, 각각의 주입 구멍을 통해서 주입된 가스가 인접 배기구멍을 통해서 배기되도록, 배기 공간(24)및 배기출구(18)와 연통되며 또한 상기 지지면(11b)에 존재하는 다수의 배기구멍(29)을 통해서 기판과 지지면 사이로부터 가스가 배기되는 것을 특징으로 하는 전자 소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910700013A 1989-05-08 1990-05-07 반도체 웨이퍼 처리장치 및 방법 KR0166973B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DEP3915039.9 1989-05-08
DE3915039A DE3915039A1 (de) 1989-05-08 1989-05-08 Hubtisch
FR8906057 1989-05-09
PCT/NL1990/000063 WO1990013687A2 (en) 1989-05-08 1990-05-07 Apparatus and method for treating flat substrates under reduced pressure

Publications (2)

Publication Number Publication Date
KR920701534A true KR920701534A (ko) 1992-08-12
KR0166973B1 KR0166973B1 (ko) 1999-01-15

Family

ID=6380264

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1019900006219A KR900017725A (ko) 1989-05-08 1990-05-01 리프팅 테이블 및 운반방법
KR1019900006358A KR0132665B1 (ko) 1989-05-08 1990-05-04 공작물용 캐리어 및 진공처리실
KR1019910700013A KR0166973B1 (ko) 1989-05-08 1990-05-07 반도체 웨이퍼 처리장치 및 방법

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1019900006219A KR900017725A (ko) 1989-05-08 1990-05-01 리프팅 테이블 및 운반방법
KR1019900006358A KR0132665B1 (ko) 1989-05-08 1990-05-04 공작물용 캐리어 및 진공처리실

Country Status (8)

Country Link
US (2) US5051054A (ko)
EP (2) EP0396923B1 (ko)
JP (2) JPH02308547A (ko)
KR (3) KR900017725A (ko)
AT (2) ATE85589T1 (ko)
DD (2) DD298435A5 (ko)
DE (5) DE3915039A1 (ko)
ES (2) ES2038012T3 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351049B1 (ko) * 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US8088225B2 (en) 2004-02-13 2012-01-03 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180000A (en) * 1989-05-08 1993-01-19 Balzers Aktiengesellschaft Workpiece carrier with suction slot for a disk-shaped workpiece
JP2911997B2 (ja) * 1989-10-20 1999-06-28 日本電気株式会社 半導体ウェハーへのテープ貼付装置
US5230741A (en) * 1990-07-16 1993-07-27 Novellus Systems, Inc. Gas-based backside protection during substrate processing
US5238499A (en) * 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5620525A (en) * 1990-07-16 1997-04-15 Novellus Systems, Inc. Apparatus for supporting a substrate and introducing gas flow doximate to an edge of the substrate
US5578532A (en) * 1990-07-16 1996-11-26 Novellus Systems, Inc. Wafer surface protection in a gas deposition process
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
US5843233A (en) * 1990-07-16 1998-12-01 Novellus Systems, Inc. Exclusion guard and gas-based substrate protection for chemical vapor deposition apparatus
JP2728766B2 (ja) * 1990-07-18 1998-03-18 株式会社東芝 半導体の処理方法およびその装置
JP2625310B2 (ja) * 1991-01-08 1997-07-02 シマテク，インコーポレイテッド シリコンウェハーの製造方法および装置
US5186238A (en) * 1991-04-25 1993-02-16 International Business Machines Corporation Liquid film interface cooling chuck for semiconductor wafer processing
US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
JPH05121543A (ja) * 1991-08-09 1993-05-18 Teikoku Seiki Kk ウエハーマウンタのウエハー支持方法、その装置及びその装置を備えるウエハーマウンタ
DE4235676C2 (de) * 1992-10-22 1997-08-28 Balzers Hochvakuum Vakuumkammer zum Transport scheibenförmiger Werkstücke in einer Vakuumanlage
JPH06158361A (ja) * 1992-11-20 1994-06-07 Hitachi Ltd プラズマ処理装置
KR960006956B1 (ko) * 1993-02-06 1996-05-25 현대전자산업주식회사 이시알(ecr) 장비
DE59406900D1 (de) * 1993-02-08 1998-10-22 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige Gegenstände
NL9300389A (nl) * 1993-03-04 1994-10-03 Xycarb Bv Substraatdrager.
US5738165A (en) * 1993-05-07 1998-04-14 Nikon Corporation Substrate holding apparatus
US5540821A (en) * 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
KR970005686B1 (ko) * 1994-04-28 1997-04-18 한국베리안 주식회사 박막열처리 장치
DE4425874A1 (de) * 1994-07-09 1996-01-11 Ges Zur Foerderung Angewandter Optik Optoelektronik Quantenelektronik & Spektroskopie Ev Substratträger
US6113702A (en) * 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US5697427A (en) * 1995-12-22 1997-12-16 Applied Materials, Inc. Apparatus and method for cooling a substrate
US5828070A (en) * 1996-02-16 1998-10-27 Eaton Corporation System and method for cooling workpieces processed by an ion implantation system
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US5772773A (en) * 1996-05-20 1998-06-30 Applied Materials, Inc. Co-axial motorized wafer lift
DE19620234A1 (de) * 1996-05-20 1997-11-27 Holtronic Technologies Ltd Verfahren und Vorrichtung zum Positionieren eines Substrats
US6183565B1 (en) * 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
DE19700839C2 (de) * 1997-01-13 2000-06-08 Siemens Ag Chuckanordnung
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
TW589391B (en) * 1997-07-08 2004-06-01 Unaxis Trading Ag Process for vacuum treating workpieces, and corresponding process equipment
DE19754390A1 (de) * 1997-12-08 1999-06-10 Leybold Systems Gmbh Vorrichtung zum Verkleben zweier flacher, kreisscheibenförmiger Substrate aus einem Kunststoff zu einer digital video disc
EP0908876A3 (de) 1997-10-08 2002-02-13 Leybold Systems GmbH Verfahren zum Verkleben eines flachen, kreisscheibenförmigen ersten Substrats aus einem Kunststoff mit einem ebensolchen zweiten Substrat zu einer digital video disc und Vorrichtung zur Durchführung des Verfahrens
US6328096B1 (en) 1997-12-31 2001-12-11 Temptronic Corporation Workpiece chuck
US6073681A (en) * 1997-12-31 2000-06-13 Temptronic Corporation Workpiece chuck
DE19833227A1 (de) * 1998-07-23 2000-02-03 Wacker Siltronic Halbleitermat Vorrichtung zum Anordnen von Scheiben aus Halbleitermaterial
DE19853605A1 (de) * 1998-11-20 2000-05-25 Philips Corp Intellectual Pty Verfahren und Anordnung zur Herstellung einer Leuchtschicht
US7002744B2 (en) * 1999-11-22 2006-02-21 Younger Mfg. Co. Dba Younger Optics Polarized optical part using high impact polyurethane-based material
US6583638B2 (en) * 1999-01-26 2003-06-24 Trio-Tech International Temperature-controlled semiconductor wafer chuck system
US6271676B1 (en) * 1999-03-02 2001-08-07 Tsk America, Inc. Spiral chuck
US6464795B1 (en) * 1999-05-21 2002-10-15 Applied Materials, Inc. Substrate support member for a processing chamber
US6187134B1 (en) 1999-07-09 2001-02-13 The Board Of Trustees Of The Leland Stanford Junior University Reusable wafer support for semiconductor processing
US6196532B1 (en) 1999-08-27 2001-03-06 Applied Materials, Inc. 3 point vacuum chuck with non-resilient support members
MY120869A (en) * 2000-01-26 2005-11-30 Matsushita Electric Ind Co Ltd Plasma treatment apparatus and method
WO2004011953A1 (en) * 2000-03-15 2004-02-05 Tsk America, Inc. Spiral chuck
US7037797B1 (en) * 2000-03-17 2006-05-02 Mattson Technology, Inc. Localized heating and cooling of substrates
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
US20010035403A1 (en) 2000-05-18 2001-11-01 Albert Wang Method and structure for producing flat wafer chucks
US6700099B2 (en) 2000-07-10 2004-03-02 Temptronic Corporation Wafer chuck having thermal plate with interleaved heating and cooling elements, interchangeable top surface assemblies and hard coated layer surfaces
US6394440B1 (en) 2000-07-24 2002-05-28 Asm America, Inc. Dual orientation leveling platform for semiconductor apparatus
US6628503B2 (en) 2001-03-13 2003-09-30 Nikon Corporation Gas cooled electrostatic pin chuck for vacuum applications
DE60106577T8 (de) * 2001-05-31 2006-04-27 Alcatel Abnehmbare Schirmvorrichtung für Plasmareaktoren
KR100411297B1 (ko) * 2002-01-17 2003-12-24 미래산업 주식회사 반도체 소자 테스트 핸들러의 소자 이송장치
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
DE10319379A1 (de) 2003-04-30 2004-11-25 Applied Films Gmbh & Co. Kg Vorrichtung zum Transportieren eines flachen Substrats in einer Vakuumkammer
EP1738251A2 (en) * 2004-04-16 2007-01-03 Cascade Basic Research Corp. Modelling relationships within an on-line connectivity universe
US7462246B2 (en) * 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
US7185412B2 (en) * 2005-05-02 2007-03-06 Precision Spherical Corp. Multi-axis, processor-controlled, toolhead positioner
US7429718B2 (en) * 2005-08-02 2008-09-30 Applied Materials, Inc. Heating and cooling of substrate support
DE102007026348A1 (de) * 2007-06-06 2008-12-11 Aixtron Ag Verfahren und Vorrichtung zur Temperatursteuerung der Oberflächentemperaturen von Substraten in einem CVD-Reaktor
US8092606B2 (en) * 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8336188B2 (en) * 2008-07-17 2012-12-25 Formfactor, Inc. Thin wafer chuck
JP2011035022A (ja) * 2009-07-30 2011-02-17 Murata Machinery Ltd 天井搬送車
DE102009044276A1 (de) * 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
US8519729B2 (en) * 2010-02-10 2013-08-27 Sunpower Corporation Chucks for supporting solar cell in hot spot testing
CN103293862B (zh) * 2012-02-22 2015-04-15 上海微电子装备有限公司 硅片边缘保护装置
CN103014650B (zh) * 2012-12-28 2014-12-03 无锡中微高科电子有限公司 蒸发台用的圆片放置夹具
CN105370357B (zh) * 2015-09-30 2018-09-18 河南飞龙(芜湖)汽车零部件有限公司 一种排气歧管夹持盘架
US10501844B2 (en) * 2016-07-25 2019-12-10 Applied Materials, Inc. Fine leveling of large carousel based susceptor
US10468290B2 (en) 2016-11-02 2019-11-05 Ultratech, Inc. Wafer chuck apparatus with micro-channel regions
CN106586648B (zh) * 2017-02-08 2019-04-05 三明市普诺维机械有限公司 一种负压配气盘
CN107190245B (zh) * 2017-05-23 2019-04-02 京东方科技集团股份有限公司 用于蒸镀装置的载板及其蒸镀装置
CN107499905A (zh) * 2017-09-25 2017-12-22 广州启盈机电设备有限公司 一种定位装置
CN108098623A (zh) * 2017-11-30 2018-06-01 江门市兆业科技有限公司 一种电子产品外壳加工夹持装置
AT521222B1 (de) * 2018-05-07 2020-04-15 Engel Austria Gmbh Vorrichtung zum Handhaben und lokalen Fixieren
CN108544365A (zh) * 2018-07-05 2018-09-18 潘真清 一种零件加工用夹紧装置
CN114619080A (zh) * 2020-12-10 2022-06-14 宁波聚士捷机械股份有限公司 一种高精度精密加工用数控雕铣机

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US4139051A (en) * 1976-09-07 1979-02-13 Rockwell International Corporation Method and apparatus for thermally stabilizing workpieces
US4183545A (en) * 1978-07-28 1980-01-15 Advanced Simiconductor Materials/America Rotary vacuum-chuck using no rotary union
US4242038A (en) * 1979-06-29 1980-12-30 International Business Machines Corporation Wafer orienting apparatus
US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4909314A (en) * 1979-12-21 1990-03-20 Varian Associates, Inc. Apparatus for thermal treatment of a wafer in an evacuated environment
US4448404A (en) * 1980-11-18 1984-05-15 Nippon Kogaku K. K. Device for holding a sheet-like sample
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4508161A (en) * 1982-05-25 1985-04-02 Varian Associates, Inc. Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4603466A (en) * 1984-02-17 1986-08-05 Gca Corporation Wafer chuck
US4548699A (en) * 1984-05-17 1985-10-22 Varian Associates, Inc. Transfer plate rotation system
JPS60245778A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
JPS61239624A (ja) * 1985-04-16 1986-10-24 Toshiba Mach Co Ltd ロ−デイング装置およびロ−デイング方法
DE3750734T2 (de) * 1986-04-04 1995-03-09 Materials Research Corp Verfahren und Vorrichtung zur Handhabung und Behandlung von scheibenartigen Materialien.
US4705951A (en) * 1986-04-17 1987-11-10 Varian Associates, Inc. Wafer processing system
EP0250064A2 (en) * 1986-06-20 1987-12-23 Varian Associates, Inc. Wafer processing chuck using multiple thin clamps
DE3633386A1 (de) * 1986-10-01 1988-04-14 Leybold Ag Verfahren und vorrichtung zum behandeln von substraten im vakuum
US4721462A (en) * 1986-10-21 1988-01-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Active hold-down for heat treating
JPS6411320A (en) * 1987-07-06 1989-01-13 Toshiba Corp Photo-cvd device
US4816732A (en) * 1987-08-17 1989-03-28 Sgs Thomson Microelectronics, Inc. Robotic hand for transporting semiconductor wafer carriers
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
US4949783A (en) * 1988-05-18 1990-08-21 Veeco Instruments, Inc. Substrate transport and cooling apparatus and method for same
US4944860A (en) * 1988-11-04 1990-07-31 Eaton Corporation Platen assembly for a vacuum processing system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100351049B1 (ko) * 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US8088225B2 (en) 2004-02-13 2012-01-03 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition
KR101112029B1 (ko) * 2004-02-13 2012-03-21 에이에스엠 아메리카, 인코포레이티드 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템

Also Published As

Publication number Publication date
DD298435A5 (de) 1992-02-20
DE3943482A1 (de) 1990-11-15
DE3943478A1 (de) 1990-11-15
US5051054A (en) 1991-09-24
JP2918986B2 (ja) 1999-07-12
DE59000868D1 (de) 1993-03-25
EP0396923B1 (de) 1993-02-10
ATE85589T1 (de) 1993-02-15
EP0397029B1 (de) 1993-02-10
JPH02308547A (ja) 1990-12-21
KR900017725A (ko) 1990-12-19
DE3915039C2 (ko) 1992-01-09
KR0166973B1 (ko) 1999-01-15
ES2038012T3 (es) 1993-07-01
DE59000869D1 (de) 1993-03-25
ES2038016T3 (es) 1993-07-01
DE3943482C2 (de) 1994-07-07
EP0396923A1 (de) 1990-11-14
DE3915039A1 (de) 1990-11-15
JPH0349839A (ja) 1991-03-04
DD298450A5 (de) 1992-02-20
EP0397029A2 (de) 1990-11-14
US5033538A (en) 1991-07-23
DE3943478C2 (de) 1995-11-16
ATE85658T1 (de) 1993-02-15
EP0397029A3 (en) 1990-12-12
KR0132665B1 (ko) 1998-04-13
KR900017726A (ko) 1990-12-19

Similar Documents

Publication Publication Date Title
KR920701534A (ko) 반도체 웨이퍼 처리장치 및 방법
KR101109299B1 (ko) 페이스-업 습식 프로세싱을 위해 웨이퍼 온도 균일성을강화시키는 장치
US6805749B2 (en) Method and apparatus for supporting a semiconductor wafer during processing
KR101018578B1 (ko) 가열 장치, 도포, 현상 장치 및 가열 방법
KR100613171B1 (ko) 반도체 기판 냉각 방법 및 장치
KR920003305B1 (ko) 웨이퍼 표면처리 장치
EP0513834B1 (en) Method and apparatus for cooling wafers
EP0423327B1 (en) Apparatus and method for treating flat substrates under reduced pressure
US5697427A (en) Apparatus and method for cooling a substrate
JPH10275854A (ja) 半導体ウェハ下の背面ガス圧力を制御する装置
KR940016554A (ko) 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
JPH11506821A (ja) 不活性ガス基板温度調節装置及びその方法
KR920003410A (ko) 처리가공시 가스베이스 기판 후면을 보호하는 장치 및 방법
JPH05291158A (ja) 熱処理装置
KR20060103217A (ko) 가열 장치, 도포, 현상 장치 및 가열 방법
EP0669640A1 (en) Susceptor for deposition apparatus
JP2000334397A (ja) 板状試料の流体処理装置及び板状試料の流体処理方法
JPH0420253B2 (ko)
JPH08162405A (ja) 熱処理方法及び熱処理装置並びに処理装置
KR20010072031A (ko) 웨이퍼 처리 방법 및 장치
JP4028198B2 (ja) 熱処理装置
KR20210054105A (ko) 기판 처리 장치 및 방법
KR102303596B1 (ko) 기판 처리 장치 및 방법
KR200156798Y1 (ko) 반도체 스퍼터링 장비의 웨이퍼 가열장치
KR20210079472A (ko) 기판 처리 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20010825

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee