KR920005147A - 다이내믹형 반도체 기억장치 - Google Patents

다이내믹형 반도체 기억장치 Download PDF

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Publication number
KR920005147A
KR920005147A KR1019910015036A KR910015036A KR920005147A KR 920005147 A KR920005147 A KR 920005147A KR 1019910015036 A KR1019910015036 A KR 1019910015036A KR 910015036 A KR910015036 A KR 910015036A KR 920005147 A KR920005147 A KR 920005147A
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KR
South Korea
Prior art keywords
memory cell
sense amplifier
cell blocks
association
activating
Prior art date
Application number
KR1019910015036A
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English (en)
Inventor
다까히로 고마쯔
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920005147A publication Critical patent/KR920005147A/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

내용 없음

Description

다이내믹형 반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예인 다이내믹형 반도체기억 장치의 구성을 개략적으로 표시하는 도면이다.
제2도는 이 발명의 다이내믹형 반도체기억 장치에 있어서의 센스엠프 활성회사에 있어서의 동작을 표시하는 신호 파형도이다.

Claims (2)

  1. 각각이 복수의 메모리셀을 가지는, m개의 메모리셀블럭을 구비하고, 단 m개는 정수이고, 상기 메모리셀블럭의 각각에 관련하여 설치되고, 관련의 메모리셀블럭내의 선택된 메모리셀의 정보를 검지하여 증폭하는 복수의 센스앰프군, 및 리플렉쉬지시검출신호와, 블럭선택신호와에 응답하여, 상기 블럭선택신호에 의하여 선택된 메모리 셀블럭에 관련하여 설치된 센스앰프군을 활성화하는 센스앰프 활성화수단을 구비하고, 상기 블럭선택신호는 m개의 메모리셀블럭중 n개의 메모리셀블럭을 동시에 지정하고, 단 n는 m이하의 정수이고, 상기 센스앰프 활성화 수단은 상기 리플렉쉬지시 검출신호가 활성화상태에 있을 때에만 선택된 n개의 메모리셀블럭에 관련하여 설치된 센스앰프군을 각각 서로 다른 타이밍에서 활성화하는 수단을 포함하는, 다이내믹형 반도체기억장치.
  2. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910015036A 1990-08-29 1991-08-29 다이내믹형 반도체 기억장치 KR920005147A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2229085A JPH04109488A (ja) 1990-08-29 1990-08-29 ダイナミック型半導体記憶装置
JP2-229085 1990-08-29

Publications (1)

Publication Number Publication Date
KR920005147A true KR920005147A (ko) 1992-03-28

Family

ID=16886520

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015036A KR920005147A (ko) 1990-08-29 1991-08-29 다이내믹형 반도체 기억장치

Country Status (6)

Country Link
US (1) US5251176A (ko)
EP (1) EP0473388B1 (ko)
JP (1) JPH04109488A (ko)
KR (1) KR920005147A (ko)
DE (1) DE69126382T2 (ko)
HK (1) HK1003807A1 (ko)

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Publication number Priority date Publication date Assignee Title
JP3305056B2 (ja) * 1993-08-31 2002-07-22 沖電気工業株式会社 ダイナミックｒａｍ
JP3220586B2 (ja) * 1993-12-28 2001-10-22 富士通株式会社 半導体記憶装置
KR0170905B1 (ko) * 1995-11-06 1999-03-30 김주용 디램
JPH09161478A (ja) * 1995-12-12 1997-06-20 Mitsubishi Electric Corp 半導体記憶装置
JPH09180442A (ja) * 1995-12-25 1997-07-11 Fujitsu Ltd 揮発性メモリ装置及びそのリフレッシュ方法
KR100234365B1 (ko) * 1997-01-30 1999-12-15 윤종용 반도체 메모리장치의 리프레쉬 방법 및 회로
KR100272161B1 (ko) * 1997-02-05 2000-12-01 윤종용 반도체메모리장치의고립게이트제어방법및회로
US6118716A (en) * 1997-12-11 2000-09-12 Evsx, Inc. Method and apparatus for an address triggered RAM circuit
US6066965A (en) * 1997-12-11 2000-05-23 Evsx, Inc. Method and apparatus for a N-nary logic circuit using 1 of 4 signals
US6069497A (en) 1997-12-11 2000-05-30 Evsx, Inc. Method and apparatus for a N-nary logic circuit using 1 of N signals
US6046953A (en) * 1998-03-30 2000-04-04 Siemens Aktiengesellschaft Decoded autorefresh mode in a DRAM
US6026042A (en) * 1998-04-10 2000-02-15 Micron Technology, Inc. Method and apparatus for enhancing the performance of semiconductor memory devices
KR100335397B1 (ko) * 1998-05-25 2002-09-05 주식회사 하이닉스반도체 센스앰프순차구동장치
KR100317195B1 (ko) * 1998-10-28 2002-02-28 박종섭 반도체메모리의리프레쉬제어회로
JP4024972B2 (ja) * 1999-11-05 2007-12-19 松下電器産業株式会社 半導体記憶装置
JP2002208274A (ja) * 2000-11-10 2002-07-26 Hitachi Ltd 半導体記憶装置
US6341097B1 (en) * 2001-01-17 2002-01-22 International Business Machines Corporation Selective address space refresh mode
JP4143368B2 (ja) * 2002-09-04 2008-09-03 エルピーダメモリ株式会社 半導体記憶装置
JP2004234729A (ja) * 2003-01-29 2004-08-19 Renesas Technology Corp 半導体記憶装置
JP2004253038A (ja) * 2003-02-19 2004-09-09 Renesas Technology Corp 半導体記憶装置
JP2006099232A (ja) * 2004-09-28 2006-04-13 Renesas Technology Corp 半導体信号処理装置
US7170808B2 (en) * 2005-03-25 2007-01-30 Infineon Technologies Ag Power saving refresh scheme for DRAMs with segmented word line architecture
US7457185B2 (en) * 2005-09-29 2008-11-25 Hynix Semiconductor Inc. Semiconductor memory device with advanced refresh control
US7266032B2 (en) * 2005-09-30 2007-09-04 Infineon Technologies Ag Memory device having low Vpp current consumption
JP2008262616A (ja) * 2007-04-10 2008-10-30 Matsushita Electric Ind Co Ltd 半導体記憶装置、内部リフレッシュ停止方法、外部アクセスと内部リフレッシュとの競合処理方法、カウンタ初期化手法、外部リフレッシュのリフレッシュアドレス検出方法、及び外部リフレッシュ実行選択方法
JP6166810B1 (ja) * 2016-03-08 2017-07-19 力晶科技股▲ふん▼有限公司 半導体記憶装置

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JPS5496333A (en) * 1978-01-17 1979-07-30 Ricoh Co Ltd Refresh system
US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
JPS63183693A (ja) * 1987-01-23 1988-07-29 Mitsubishi Electric Corp 半導体記憶装置
JPS643896A (en) * 1987-06-24 1989-01-09 Mitsubishi Electric Corp Semiconductor dynamic ram
JPS6484496A (en) * 1987-09-26 1989-03-29 Mitsubishi Electric Corp Semiconductor memory
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US4933907A (en) * 1987-12-03 1990-06-12 Mitsubishi Denki Kabushiki Kaisha Dynamic random access memory device and operating method therefor
GB8801472D0 (en) * 1988-01-22 1988-02-24 Int Computers Ltd Dynamic random-access memory

Also Published As

Publication number Publication date
JPH04109488A (ja) 1992-04-10
DE69126382D1 (de) 1997-07-10
EP0473388A2 (en) 1992-03-04
HK1003807A1 (en) 1998-11-06
EP0473388A3 (en) 1992-05-06
DE69126382T2 (de) 1997-11-06
US5251176A (en) 1993-10-05
EP0473388B1 (en) 1997-06-04

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