KR920004175B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR920004175B1
KR920004175B1 KR1019880016517A KR880016517A KR920004175B1 KR 920004175 B1 KR920004175 B1 KR 920004175B1 KR 1019880016517 A KR1019880016517 A KR 1019880016517A KR 880016517 A KR880016517 A KR 880016517A KR 920004175 B1 KR920004175 B1 KR 920004175B1
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KR
South Korea
Prior art keywords
forming
semiconductor
semiconductor substrate
manufacturing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880016517A
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English (en)
Korean (ko)
Other versions
KR890011033A (ko
Inventor
무라 요시노리 오구
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR890011033A publication Critical patent/KR890011033A/ko
Application granted granted Critical
Publication of KR920004175B1 publication Critical patent/KR920004175B1/ko
Expired legal-status Critical Current

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    • H10P30/20—
    • H10P32/302—
    • H10D64/011—
    • H10D64/0113—
    • H10P32/1414—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/02—Contacts, special

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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
KR1019880016517A 1987-12-14 1988-12-12 반도체장치의 제조방법 Expired KR920004175B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62317808A JPH0750696B2 (ja) 1987-12-14 1987-12-14 半導体装置の製造方法
JP87-317808 1987-12-14

Publications (2)

Publication Number Publication Date
KR890011033A KR890011033A (ko) 1989-08-12
KR920004175B1 true KR920004175B1 (ko) 1992-05-30

Family

ID=18092271

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016517A Expired KR920004175B1 (ko) 1987-12-14 1988-12-12 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US4906591A (cg-RX-API-DMAC10.html)
JP (1) JPH0750696B2 (cg-RX-API-DMAC10.html)
KR (1) KR920004175B1 (cg-RX-API-DMAC10.html)
DE (1) DE3841927A1 (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2954263B2 (ja) * 1990-03-22 1999-09-27 沖電気工業株式会社 半導体装置の製造方法
KR930000581B1 (ko) * 1990-04-04 1993-01-25 금성일렉트론 주식회사 자기 정렬된 캐패시터 콘택을 갖는 셀 제조방법 및 구조
JP2720592B2 (ja) * 1990-09-25 1998-03-04 日本電気株式会社 半導体装置の製造方法
DE4331549A1 (de) * 1993-09-16 1995-04-13 Gold Star Electronics Verfahren zur Herstellung einer ULSI-Halbleitereinrichtung
KR0166824B1 (ko) * 1995-12-19 1999-02-01 문정환 반도체 소자의 제조방법
US6017829A (en) 1997-04-01 2000-01-25 Micron Technology, Inc. Implanted conductor and methods of making
US5998294A (en) * 1998-04-29 1999-12-07 The United States Of America As Represented By The Secretary Of The Navy Method for forming improved electrical contacts on non-planar structures
US6187481B1 (en) * 1998-08-20 2001-02-13 Micron Technology, Inc. Semiconductive material stencil mask and methods of manufacturing stencil masks from semiconductive material, utilizing different dopants
US6300017B1 (en) * 1998-08-20 2001-10-09 Micron Technology, Inc. Stencil masks and methods of manufacturing stencil masks
DE10149199B4 (de) * 2001-10-05 2006-05-18 Infineon Technologies Ag Speicherzellenfeld und Verfahren zu seiner Herstellung
KR100905872B1 (ko) * 2007-08-24 2009-07-03 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성 방법
JP2017168698A (ja) * 2016-03-17 2017-09-21 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871067A (en) * 1973-06-29 1975-03-18 Ibm Method of manufacturing a semiconductor device
JPS54128668A (en) * 1978-03-30 1979-10-05 Toshiba Corp Manufacture for electronic component device
US4502206A (en) * 1983-11-18 1985-03-05 Rca Corporation Method of forming semiconductor contacts by implanting ions of neutral species at the interfacial region
US4693925A (en) * 1984-03-01 1987-09-15 Advanced Micro Devices, Inc. Integrated circuit structure having intermediate metal silicide layer
JPS6246575A (ja) * 1985-08-23 1987-02-28 Sharp Corp 薄膜半導体装置

Also Published As

Publication number Publication date
JPH0750696B2 (ja) 1995-05-31
JPH01157522A (ja) 1989-06-20
DE3841927A1 (de) 1989-06-22
KR890011033A (ko) 1989-08-12
DE3841927C2 (cg-RX-API-DMAC10.html) 1991-11-21
US4906591A (en) 1990-03-06

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