KR910018789A - 적외선 센서 및 그 제조방법 - Google Patents

적외선 센서 및 그 제조방법 Download PDF

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KR910018789A
KR910018789A KR1019910006223A KR910006223A KR910018789A KR 910018789 A KR910018789 A KR 910018789A KR 1019910006223 A KR1019910006223 A KR 1019910006223A KR 910006223 A KR910006223 A KR 910006223A KR 910018789 A KR910018789 A KR 910018789A
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infrared
substrate
sensor
silicon oxynitride
oxynitride film
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KR1019910006223A
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KR940003274B1 (ko
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모리 다께히사
기바 히사나가
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도자와 미쓰오
데루모 가부시끼가이샤
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Priority claimed from JP2100454A external-priority patent/JPH041535A/ja
Priority claimed from JP2287105A external-priority patent/JP2946351B2/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/30—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on X-radiation, gamma radiation or particle radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0831—Masks; Aperture plates; Spatial light modulators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

내용 없음

Description

적외선 센서 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 한 실시예에 관계되는 적외선 센서의 구성을 나타내는 평면도, 제 2도는 제 1도의 적외선 센서의 평면도, 제 3도는 제 1도의 3-3선을 따른 평면도.

Claims (16)

  1. 적외선 투과 재료에 의하여 형성됨과 동시에, 제 1의 면 및 상기 제 1의 면에 마주하는 제 2의 면을 갖는 센서기판과, 상기 센서기판의 제 1의 면측에 설치된 적외선 반사막과, 상기 센서기판의 제 2의 면측에 설치된 적외선 검출소자와, 상기 적외선 반사막에 상기 적외선 검출 소자에 관련시켜서 형성되고, 상기 적외선을 이 적외선 투과창부 및 상기 센서기판을 투과시켜서 상기 적외선 검출소자에 입사시키기 위한 적외선 투과창부를 구비함을 특징으로 하는 적외선 센서.
  2. 제 1항에 있어서, 상기 적외선 검출소자가 상기 센서기판의 상기 제 2의 면측에 복수개 설치되고, 상기 적외선 투과창부는 상기 복수의 적외선 검출소자중의 특정한 소자에만 적외선이 입사될 수 있는 위치에 형성되어 있음을 특징으로 하는 적외선 센서.
  3. 제 2항에 있어서, 상기 센서기판의 상기 제 2의 면측에 복수의 브릿지가 형성되고, 상기 복수의 브릿지 위에 각각 상기 적외선 검출소자가 1개씩 설치되어 있음을 특징으로 하는 적외선 센서.
  4. 제 1 내지 3항 중 어느 한 항에 있어서, 상기 센서기판의 상기 제 2의 면측에 전극패드가 설치되고, 상기 전극패드가 상기 적외선 검출 소자에 전기적으로 접속되어 있음을 특징으로 하는 적외선 센서.
  5. 제 4항에 있어서, 상기 센서기판의 상기 전극패드에 대응하는 위치에 도전성층과, 상기 도전성 층에 각각 접속된 전극단자를 갖춘 단자기판을 가지며, 상기 센서기판이, 상기 전극패드를 상기 단자 기판의 상기 도전성층에 접합된 형태에서 상기 단자기판 위에 고착되어 있음을 특징으로 하는 적외선 센서.
  6. 제 5항에 있어서, 상기 단자기판의 상기 센서 기판이 접합되는 면에 피트부(pit)가 형성되고, 이 피트부의 주위가 상기 센서기판의 상기 단자기판에의 접합에 수반하여 밀봉됨을 특징으로 하는 적외선 센서.
  7. 제 1 내지 6항 중 어느 한 항에 있어서, 상기 적외선 반사성막이 금속막으로 이루어짐을 특징으로 하는 적외선 센서.
  8. 제 1 내지 7항 중 어느 한 항에 있어서, 상기 적외선 투과재료가 실리콘으로 이루어딤을 특징으로 하는 적외선 센서.
  9. 제 1 내지 7항 중 어느 한 항에 있어서, 상기 적외선 투과재료가 게르마늄으로 이루어짐을 특징으로 하는 적외선 센서.
  10. 제 3 내지 9항 중 어느 한 항에 있어서, 상기 브릿지를 실리콘 옥시 나이트 라이드 막으로 형성시킴을 특징으로 하는 적외선 센서.
  11. 제 10항에 있어서, 상기 실리콘 옥시 나이트 라이드 막의 조성을 상기 센서기판의 재료에 따라서 설정함을 특징으로 하는 적외선 센서.
  12. 제 11항에 있어서, 상기 실리콘 옥시 나이트 라이드 막의 막두께를 상기 센서기판의 재료에 따라서 설정함을 특징으로 하는 적외선 센서.
  13. 제 12항에 있어서, 상기 실리콘 옥시 나이트 라이드 막의 막두께를 0.1 내지 50㎛로 함을 특징으로 하는 적외선 센서.
  14. 반도체 재료에 의하여 형성된 센서기판과, 실리콘 옥시 나이트 라이드막에 의하여 형성되고, 상기 센서기판 상에 설치된 브릿지와, 상기 브릿지 위에 설치된 적외선 검출소자를 구비함을 특징으로 하는 적외선 센서.
  15. 반도체 기판 위에 반응가스를 흘러서 실리콘 옥시 나이트 라이드 막을 형성하는 공정과, 상기 실리콘 옥시 나이트 라이드 막의 패터닝을 실시하는 공정과, 상기 패터닝된 실리콘 옥시 나이트 라이드 막의 하부의 반도체 기판을 선택적으로 제거하여 피트부를 형성하고, 실리콘 옥시 나이트 라이드 막으로 이루는 브릿지를 형성하는 공정을 구비한 것을 특징으로 하는 적외선 센서의 제조방법.
  16. 제 15항에 있어서, 상기 반응가스 중의 가스 유량비를 변경함으로서, 상기 반도체 기판의 열팽창률에 따라 실리콘 옥시 나이트 라이드 막의 조성을 변화시키도록 함을 특징으로 하는 적외선 센서의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910006223A 1990-04-18 1991-04-18 적외선 센서 및 그 제조방법 KR940003274B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2100454A JPH041535A (ja) 1990-04-18 1990-04-18 赤外線センサ
JP2-100454 1990-04-18
JP2-287105 1990-10-26
JP2287105A JP2946351B2 (ja) 1990-10-26 1990-10-26 赤外線センサおよびその製造方法

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KR910018789A true KR910018789A (ko) 1991-11-30
KR940003274B1 KR940003274B1 (ko) 1994-04-16

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US (1) US5118944A (ko)
EP (2) EP0453372B1 (ko)
KR (1) KR940003274B1 (ko)
AU (1) AU631734B2 (ko)
CA (1) CA2040631C (ko)
DE (2) DE69106763T2 (ko)

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GB2282261A (en) * 1992-09-17 1995-03-29 Mitsubishi Electric Corp Infrared detector array and production method therefor
JPH09506712A (ja) * 1993-12-13 1997-06-30 ハネウエル・インコーポレーテッド 赤外線デバイス用集積シリコン真空マイクロパッケージ
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CA2040631A1 (en) 1991-10-19
AU631734B2 (en) 1992-12-03
CA2040631C (en) 1996-05-14
EP0453372A1 (en) 1991-10-23
US5118944A (en) 1992-06-02
EP0604405B1 (en) 1997-02-05
EP0453372B1 (en) 1995-01-18
DE69124630T2 (de) 1997-07-17
DE69124630D1 (de) 1997-03-20
AU7505191A (en) 1991-12-19
DE69106763T2 (de) 1995-09-21
EP0604405A1 (en) 1994-06-29
KR940003274B1 (ko) 1994-04-16
DE69106763D1 (de) 1995-03-02

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