DE69106763T2 - Infrarotsensor. - Google Patents

Infrarotsensor.

Info

Publication number
DE69106763T2
DE69106763T2 DE69106763T DE69106763T DE69106763T2 DE 69106763 T2 DE69106763 T2 DE 69106763T2 DE 69106763 T DE69106763 T DE 69106763T DE 69106763 T DE69106763 T DE 69106763T DE 69106763 T2 DE69106763 T2 DE 69106763T2
Authority
DE
Germany
Prior art keywords
infrared sensor
infrared
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69106763T
Other languages
English (en)
Other versions
DE69106763D1 (de
Inventor
Takehisa Mori
Hisanaga Kiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Terumo Corp
Original Assignee
Terumo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2100454A external-priority patent/JPH041535A/ja
Priority claimed from JP2287105A external-priority patent/JP2946351B2/ja
Application filed by Terumo Corp filed Critical Terumo Corp
Publication of DE69106763D1 publication Critical patent/DE69106763D1/de
Application granted granted Critical
Publication of DE69106763T2 publication Critical patent/DE69106763T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
    • G01K11/30—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using measurement of the effect of a material on X-radiation, gamma radiation or particle radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/023—Particular leg structure or construction or shape; Nanotubes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0225—Shape of the cavity itself or of elements contained in or suspended over the cavity
    • G01J5/024—Special manufacturing steps or sacrificial layers or layer structures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/041—Mountings in enclosures or in a particular environment
    • G01J5/045—Sealings; Vacuum enclosures; Encapsulated packages; Wafer bonding structures; Getter arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G01J5/046—Materials; Selection of thermal materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0831—Masks; Aperture plates; Spatial light modulators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69106763T 1990-04-18 1991-04-18 Infrarotsensor. Expired - Fee Related DE69106763T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2100454A JPH041535A (ja) 1990-04-18 1990-04-18 赤外線センサ
JP2287105A JP2946351B2 (ja) 1990-10-26 1990-10-26 赤外線センサおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69106763D1 DE69106763D1 (de) 1995-03-02
DE69106763T2 true DE69106763T2 (de) 1995-09-21

Family

ID=26441479

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69124630T Expired - Fee Related DE69124630T2 (de) 1990-04-18 1991-04-18 Infrarotsensor und Herstellungsverfahren dafür
DE69106763T Expired - Fee Related DE69106763T2 (de) 1990-04-18 1991-04-18 Infrarotsensor.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69124630T Expired - Fee Related DE69124630T2 (de) 1990-04-18 1991-04-18 Infrarotsensor und Herstellungsverfahren dafür

Country Status (6)

Country Link
US (1) US5118944A (de)
EP (2) EP0604405B1 (de)
KR (1) KR940003274B1 (de)
AU (1) AU631734B2 (de)
CA (1) CA2040631C (de)
DE (2) DE69124630T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991016607A1 (en) * 1990-04-26 1991-10-31 Commonwealth Of Australia, The Secretary Department Of Defence Semiconductor film bolometer thermal infrared detector
JPH06317475A (ja) * 1991-07-19 1994-11-15 Terumo Corp 赤外線センサおよびその製造方法
DE69313337T2 (de) * 1992-04-17 1998-01-02 Terumo Corp Infrarotsensor und Verfahren für dessen Herstellung
EP0645002B1 (de) * 1992-06-11 1997-04-02 Honeywell Inc. Wärmeisolierungs-mikrostruktur
US5583058A (en) * 1992-09-17 1996-12-10 Mitsubishi Denki Kabushiki Kaisha Infrared detection element array and method for fabricating the same
EP0734589B1 (de) * 1993-12-13 1998-03-25 Honeywell Inc. Integrierte silizium-vakuum-mikropackung für infrarot-geräte
US5602043A (en) * 1995-01-03 1997-02-11 Texas Instruments Incorporated Monolithic thermal detector with pyroelectric film and method
JP3494747B2 (ja) * 1995-03-31 2004-02-09 石塚電子株式会社 薄膜温度センサ及びその製造方法
EP0773435A3 (de) * 1995-07-21 1998-03-11 Texas Instruments Incorporated Verfahren und Vorrichtungen zur Strahlungsmessung
GB2310218B (en) * 1996-02-13 1999-12-22 Marconi Gec Ltd Coatings
GB2316225A (en) 1996-08-06 1998-02-18 Northern Telecom Ltd Semiconductor photodetector packaging
US5831266A (en) * 1996-09-12 1998-11-03 Institut National D'optique Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure
US5962909A (en) * 1996-09-12 1999-10-05 Institut National D'optique Microstructure suspended by a microsupport
GB2334141A (en) * 1998-01-30 1999-08-11 Northern Telecom Ltd Semiconductor device packaging
US6036872A (en) 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
CN1103498C (zh) * 1999-01-28 2003-03-19 北京工业大学 红外探测器
FR2822541B1 (fr) 2001-03-21 2003-10-03 Commissariat Energie Atomique Procedes et dispositifs de fabrication de detecteurs de rayonnement
DE10144343A1 (de) * 2001-09-10 2003-03-27 Perkinelmer Optoelectronics Sensor zum berührugslosen Messen einer Temperatur
EP1369929B1 (de) 2002-05-27 2016-08-03 STMicroelectronics Srl Herstellungsverfahren von verkapselten optischen Sensoren und so hergestellter verkapselter optischer Sensor
GB0405201D0 (en) * 2004-03-09 2004-04-21 Melexis Nv Infra red sensing devices
EP2097725B1 (de) * 2006-12-27 2019-08-28 Analog Devices, Inc. Steueröffnung für einen ip-sensor
DE102007024903B4 (de) * 2007-05-29 2009-05-07 Pyreos Ltd. Vorrichtung mit Sandwichstruktur zur Detektion von Wärmestrahlung, Verfahren zum Herstellen und Verwendung der Vorrichtung
CN104425644B (zh) * 2013-09-09 2016-08-17 钜晶电子股份有限公司 结合红外线感测功能的多波段光感测器及其制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3949223A (en) * 1973-11-01 1976-04-06 Honeywell Inc. Monolithic photoconductive detector array
JPS57178149A (en) * 1981-04-28 1982-11-02 Ricoh Co Ltd Manufacture of electric heater
JPS5879122A (ja) * 1981-11-05 1983-05-12 Kureha Chem Ind Co Ltd 焦電性赤外線検出器
JPH06103218B2 (ja) * 1984-07-23 1994-12-14 光照 木村 光センサ
US4771325A (en) * 1985-02-11 1988-09-13 American Telephone & Telegraph Co., At&T Bell Laboratories Integrated photodetector-amplifier device
JPH0765937B2 (ja) * 1986-05-27 1995-07-19 石塚電子株式会社 センサ素子およびその製造方法
CA1317034C (en) * 1988-09-30 1993-04-27 Alliedsignal Inc. Fabrication of oxynitride frontside microstructures

Also Published As

Publication number Publication date
EP0604405A1 (de) 1994-06-29
EP0604405B1 (de) 1997-02-05
CA2040631C (en) 1996-05-14
KR910018789A (ko) 1991-11-30
EP0453372B1 (de) 1995-01-18
EP0453372A1 (de) 1991-10-23
DE69106763D1 (de) 1995-03-02
DE69124630T2 (de) 1997-07-17
US5118944A (en) 1992-06-02
AU631734B2 (en) 1992-12-03
AU7505191A (en) 1991-12-19
CA2040631A1 (en) 1991-10-19
KR940003274B1 (ko) 1994-04-16
DE69124630D1 (de) 1997-03-20

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee