JPS5756746A - Humidity sensitive semiconductor element - Google Patents

Humidity sensitive semiconductor element

Info

Publication number
JPS5756746A
JPS5756746A JP55131601A JP13160180A JPS5756746A JP S5756746 A JPS5756746 A JP S5756746A JP 55131601 A JP55131601 A JP 55131601A JP 13160180 A JP13160180 A JP 13160180A JP S5756746 A JPS5756746 A JP S5756746A
Authority
JP
Japan
Prior art keywords
film
humidity sensitive
humidity
sulfon
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55131601A
Other languages
Japanese (ja)
Inventor
Takashi Yokoyama
Tokuyuki Kaneshiro
Hiroshi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55131601A priority Critical patent/JPS5756746A/en
Publication of JPS5756746A publication Critical patent/JPS5756746A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

PURPOSE:To obtain a humidity sensitive element having a P-N joint which has a high sensitivity and a long life and also a high mass productivity, by protecting the joining part by an oxidation film and forming a metallic layer electrode and a film made of one kind or more of a specific resin on the oxidation film as a humidity sensitive protective film. CONSTITUTION:For example, a p type diffusion layer 2 is formed on an n type silicon substrate 4 and exposed portion of P-N joining of a PNP type MOS element provided with a source electrode 5, a gate electrode 6 and a drain electrode 7, is protected by an insulation film 1 such as SiO2, Si3N4. Next, a humidity sensitive protective film 3 is formed on the film 1 by using one kind or more of polyester, polyester sulfon, polyimide, polyimidoether sulfon, polyimido sulfon, polyimidoquinazoline-dione and silicone resin. Hereby, there is a relation of a straight line between the relative humidity of the humidity sensitive element and a logarithm of a leakage current and the current is increased in accordance with an elevation of the humidity. Thus, the element having a high sensitivity and a stain resistance for adsorption of dust, cigarette smoke or waste gas of a motorcar and also, a hydrolysis resistance and moreover, a long life, is obtained.
JP55131601A 1980-09-24 1980-09-24 Humidity sensitive semiconductor element Pending JPS5756746A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55131601A JPS5756746A (en) 1980-09-24 1980-09-24 Humidity sensitive semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55131601A JPS5756746A (en) 1980-09-24 1980-09-24 Humidity sensitive semiconductor element

Publications (1)

Publication Number Publication Date
JPS5756746A true JPS5756746A (en) 1982-04-05

Family

ID=15061869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55131601A Pending JPS5756746A (en) 1980-09-24 1980-09-24 Humidity sensitive semiconductor element

Country Status (1)

Country Link
JP (1) JPS5756746A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046455A (en) * 1983-08-25 1985-03-13 Chino Works Ltd Humidity element
JPS6157847A (en) * 1984-08-29 1986-03-24 Sharp Corp Field effect type humidity sensor
US5138251A (en) * 1989-10-04 1992-08-11 Olympus Optical Co., Ltd. Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same
EP1191332A1 (en) * 2000-07-25 2002-03-27 Siemens Aktiengesellschaft Suspended Gate Field Effect Transistor (SGFET) with polymer coating used as humidity sensor
US20170023459A1 (en) * 2015-07-22 2017-01-26 International Business Machines Corporation Measurement of particulate matter deliquescence relative humidity

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046455A (en) * 1983-08-25 1985-03-13 Chino Works Ltd Humidity element
JPS6157847A (en) * 1984-08-29 1986-03-24 Sharp Corp Field effect type humidity sensor
JPH0415903B2 (en) * 1984-08-29 1992-03-19 Sharp Kk
US5138251A (en) * 1989-10-04 1992-08-11 Olympus Optical Co., Ltd. Fet sensor apparatus of flow-cell adaptive type and method of manufacturing the same
EP1191332A1 (en) * 2000-07-25 2002-03-27 Siemens Aktiengesellschaft Suspended Gate Field Effect Transistor (SGFET) with polymer coating used as humidity sensor
US20170023459A1 (en) * 2015-07-22 2017-01-26 International Business Machines Corporation Measurement of particulate matter deliquescence relative humidity
US10241021B2 (en) * 2015-07-22 2019-03-26 International Business Machines Corporation Measurement of particulate matter deliquescence relative humidity

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