KR910015866A - 고체 방사선 검출기 - Google Patents

고체 방사선 검출기 Download PDF

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Publication number
KR910015866A
KR910015866A KR1019910002182A KR910002182A KR910015866A KR 910015866 A KR910015866 A KR 910015866A KR 1019910002182 A KR1019910002182 A KR 1019910002182A KR 910002182 A KR910002182 A KR 910002182A KR 910015866 A KR910015866 A KR 910015866A
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KR
South Korea
Prior art keywords
detector
photodiode
thin film
film transistor
gate
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KR1019910002182A
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English (en)
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KR0162903B1 (ko
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트리 트란 낭
씨. 달퀴스트 존
Original Assignee
게리 엘. 그리스울드
미네소타 마이닝 앤드 매뉴팩츄어링 캄파니
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Publication of KR910015866A publication Critical patent/KR910015866A/ko
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Publication of KR0162903B1 publication Critical patent/KR0162903B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

내용 없음

Description

고체 방사선 검출기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 방사선 사진 시스템에 있어서의 본 발명의 개략도, 제2도는 본 발명에 따른 X선 검출기의 분해사시도, 제3a도는 본 발명에 따른 검출기의 픽셀 유니트의 단면도, 제3b도는 차단 다이오드를 포함하는 본 발명에 따른 검출기의 픽셀 유니트의 단면도.

Claims (10)

  1. 복수개의 픽셀을 포함하며, 각각의 픽셀은; 게이트를 가진 박막트랜지스터와; 상기 픽셀이 X선에 노출되는 때에 전류를 발생하는 상기 박막 트랜지스터의 상기 게이트에 전도가능하게 접속된 포토다이오드를 포함하는 검출기.
  2. 제1항에 있어서, 상기 포토다이오드의 광수신관계의 X선 감응 인광체를 더 포함하는 검출기.
  3. 제1항에 있어서, 상기 포토다이오드는 X선 감응층을 포함하는 검출기.
  4. 제1 내지 3항에 있어서, 상기 픽셀들은 2차원 어레이로 배치된 검출기.
  5. 제1 내지 4항에 있어서, 상기 포토다이오드는 아몰포스 실리콘 다이오드인 검출기.
  6. 제5항에 있어서, 상기 실리콘 다이오드는 도우프되지 않은 아몰포스 실리콘 층과 상기 도우프되지 않은 아몰포스 실리콘층에 이웃하는 도우프된 아몰포스 실리콘층을 포함하고, 상기 실리콘 층들은 모두 제1전극층과 제2전극층 간에 배치되며, 상기 제1전극층은 상기 박막 트랜지스터의 상기 게이트와 전도가능하게 접촉하는 검출기.
  7. 제1 내지 6항에 있어서, 상기 검출기는 X선 흡수 금속층을 더 포함하고, 상기 X선 흡수 금속층은 상기 포토다이오드와 상기 박막트랜지스터의 상기 게이트에 전도가능하게 접촉하는 검출기.
  8. 제1 내지 7항에 있어서, 상기 검출기는 상기 박막 트랜지스터와 상기 포토다이오드 간에 배치된 절연층과, 상기 박막 트랜지스터의 상기 게이트와 상기 포토다이오드 간의 전도성 접속을 허용하는 수단을 더 포함하는 검출기.
  9. 제1 내지 8항에 있어서, 상기 어레이의 상기 픽셀로 부터 전기 신호를 수신하고 상기 픽셀에 전기신호를 송신하는 회로수단을 더 포함하는 검출기.
  10. 제9항에 있어서, 상기 회로 수단은 상기 어레이의 주변부를 따라 배치되는 검출기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002182A 1990-02-09 1991-02-08 방사선 검출기 및 다중-모듈 방사선 검출기 KR0162903B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US47820190A 1990-02-09 1990-02-09
US478,201 1990-02-09

Publications (2)

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KR910015866A true KR910015866A (ko) 1991-09-30
KR0162903B1 KR0162903B1 (ko) 1999-05-01

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KR1019910002182A KR0162903B1 (ko) 1990-02-09 1991-02-08 방사선 검출기 및 다중-모듈 방사선 검출기

Country Status (7)

Country Link
US (1) US5420452A (ko)
EP (1) EP0441521B1 (ko)
JP (1) JPH04214669A (ko)
KR (1) KR0162903B1 (ko)
CA (1) CA2034118A1 (ko)
DE (1) DE69126221T2 (ko)
IL (1) IL96971A0 (ko)

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Publication number Publication date
CA2034118A1 (en) 1991-08-10
KR0162903B1 (ko) 1999-05-01
DE69126221T2 (de) 1997-11-20
EP0441521B1 (en) 1997-05-28
EP0441521A1 (en) 1991-08-14
DE69126221D1 (de) 1997-07-03
IL96971A0 (en) 1992-03-29
US5420452A (en) 1995-05-30
JPH04214669A (ja) 1992-08-05

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