ES2040256T3 - Circuito para proporcionar una senal detectable correspondiente a la cantidad de radiacion incidente sobre un pixel fotosensible. - Google Patents

Circuito para proporcionar una senal detectable correspondiente a la cantidad de radiacion incidente sobre un pixel fotosensible.

Info

Publication number
ES2040256T3
ES2040256T3 ES198787307461T ES87307461T ES2040256T3 ES 2040256 T3 ES2040256 T3 ES 2040256T3 ES 198787307461 T ES198787307461 T ES 198787307461T ES 87307461 T ES87307461 T ES 87307461T ES 2040256 T3 ES2040256 T3 ES 2040256T3
Authority
ES
Spain
Prior art keywords
incident radiation
circuit
amount
signal corresponding
detectable signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198787307461T
Other languages
English (en)
Inventor
Koichi Kitamura
Louis D. Swatz
Clive Catchpole
Zvi. Yaniv
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OIS Optical Imaging Systems Inc
Original Assignee
OIS Optical Imaging Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OIS Optical Imaging Systems Inc filed Critical OIS Optical Imaging Systems Inc
Application granted granted Critical
Publication of ES2040256T3 publication Critical patent/ES2040256T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/40—Picture signal circuits
    • H04N1/40056—Circuits for driving or energising particular reading heads or original illumination means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Light Receiving Elements (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrophotography Configuration And Component (AREA)

Abstract

MEDIANTE EL MANTENIMIENTO DE LOS PRIMEROS ELECTRODOS DE UN ELEMENTO FOTOGENERADOR (18) Y UN ELEMENTO DE BLOQUEO DE CORRIENTE (16) A UN POTENCIAL COMUN, MIENTRAS SE INTERCONECTAN ELECTRICAMENTE LOS SEGUNDOS ELECTRODOS DE AQUELLOS, EL ELEMENTO DE BLOQUEO NO NECESITA SER CUBIERTO DE LA RADIACION INCIDENTE (12) PORQUE LA SEÑAL ELECTRICA ALMACENADA GENERADA POR EL ELEMENTO FOTO GENERADOR NO SERA DISIPADA POR LOS PARES DE PORTADORES FOTOGENERADOS APORTADOS POR EL ELEMENTO DE BLOQUEO DE CORRIENTE.
ES198787307461T 1986-09-16 1987-08-24 Circuito para proporcionar una senal detectable correspondiente a la cantidad de radiacion incidente sobre un pixel fotosensible. Expired - Lifetime ES2040256T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/907,926 US4714836A (en) 1986-09-16 1986-09-16 Photosensitive pixel with exposed blocking element

Publications (1)

Publication Number Publication Date
ES2040256T3 true ES2040256T3 (es) 1993-10-16

Family

ID=25424863

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198787307461T Expired - Lifetime ES2040256T3 (es) 1986-09-16 1987-08-24 Circuito para proporcionar una senal detectable correspondiente a la cantidad de radiacion incidente sobre un pixel fotosensible.

Country Status (8)

Country Link
US (1) US4714836A (es)
EP (1) EP0260824B1 (es)
JP (1) JPS6386973A (es)
AT (1) ATE87399T1 (es)
CA (1) CA1325056C (es)
DE (1) DE3784991T2 (es)
ES (1) ES2040256T3 (es)
IL (1) IL83893A (es)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910412A (en) * 1987-04-17 1990-03-20 Stemcor Corporation Light biased photoresponsive array
FR2626128B1 (fr) * 1988-01-15 1990-05-04 Thomson Csf Matrice photosensible a deux diodes et une capacite par point, sans remise a niveau optique
DE3816660C1 (en) * 1988-05-17 1989-09-07 Messerschmitt-Boelkow-Blohm Gmbh, 8012 Ottobrunn, De Sensor, especially photodetector arrangement
US5335092A (en) * 1989-04-06 1994-08-02 Nippon Steel Corporation Contact type image sensor
JPH03209767A (ja) * 1990-01-11 1991-09-12 Fuji Xerox Co Ltd イメージセンサ
US5216274A (en) * 1991-01-11 1993-06-01 Fuji Xerox Co., Ltd. Image sensor
EP0515849A3 (en) * 1991-04-27 1993-05-19 Kanegafuchi Chemical Industry Co., Ltd. Image sensor
US5254848A (en) * 1991-06-21 1993-10-19 Fuji Xerox Co., Ltd. Image sensor and method of reading data out of the same having load capacitors being respectively continuously connected to common signal lines
JPH0522516A (ja) * 1991-07-17 1993-01-29 Fuji Xerox Co Ltd イメージセンサ
GB9209734D0 (en) * 1992-05-06 1992-06-17 Philips Electronics Uk Ltd An image sensor
EP0601200A4 (en) * 1992-06-15 1994-10-26 Kanegafuchi Chemical Ind SEMICONDUCTOR ARRANGEMENT.
WO1993026046A1 (en) * 1992-06-15 1993-12-23 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Semiconductor device
US5774180A (en) * 1992-12-04 1998-06-30 Fuji Xerox Co., Ltd. Image sensor capable of producing an image signal free from an afterimage
EP0619676A3 (en) * 1993-04-09 1995-05-24 Kanegafuchi Chemical Ind Method and device for reading images.
EP1786027A3 (en) * 2005-11-14 2009-03-04 Schott AG Plasma etching of tapered structures

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369372A (en) * 1979-06-18 1983-01-18 Canon Kabushiki Kaisha Photo electro transducer device
US4500924A (en) * 1979-11-16 1985-02-19 Matsushita Electric Industrial Co., Ltd. Solid state imaging apparatus
EP0163956A3 (en) * 1984-05-04 1988-04-06 Energy Conversion Devices, Inc. Intergrated radiation sensing array
US4675739A (en) * 1984-05-04 1987-06-23 Energy Conversion Devices, Inc. Integrated radiation sensing array

Also Published As

Publication number Publication date
DE3784991T2 (de) 1993-10-14
EP0260824A3 (en) 1989-03-15
DE3784991D1 (de) 1993-04-29
JPS6386973A (ja) 1988-04-18
EP0260824A2 (en) 1988-03-23
US4714836A (en) 1987-12-22
IL83893A (en) 1991-03-10
ATE87399T1 (de) 1993-04-15
IL83893A0 (en) 1988-02-29
CA1325056C (en) 1993-12-07
EP0260824B1 (en) 1993-03-24

Similar Documents

Publication Publication Date Title
ES2040256T3 (es) Circuito para proporcionar una senal detectable correspondiente a la cantidad de radiacion incidente sobre un pixel fotosensible.
DE3278658D1 (en) Opto-electronic coupling device
ES510729A0 (es) "una disposicion de circuito de proteccion de semiconductores".
FR2581482B1 (fr) Photodiode pin a faible courant de fuite
ES511688A0 (es) "una disposicion de proteccion de cargas para un circuito electrico".
DE69306439D1 (de) P.i.n-Fotodioden mit transparenten leitfähigen Kontakten
IT8521087A0 (it) Dispositivo elettrico di potenza intelligente a circuito integrato monolitico.
IT1226438B (it) Circuito elettronico con dispositivo di protezione da variazioni di tensione della batteria di alimentazione.
ES514202A0 (es) "una instalacion generadora de potencia electrica".
DE3576061D1 (de) Ausgangssignalerzeugungsschaltung fuer ladungsgekoppelte einrichtungen.
IT1228034B (it) Circuito generatore di corrente a specchi complementari di corrente
MX158153A (es) Un interruptor mejorado de circuito electrico de falla de tierra
ITMI911390A1 (it) Circuito di pilotaggio di un transistore di potenza con una corrente di base funzione predeterminata di quella di collettore
IT8223522A0 (it) Circuito generatore di corrente costante, a bassa tensione di alimentazione, integrabile monoliticamente.
IT8523318A0 (it) Circuito rivelatore di inquadramento pseudo-casuale.
ES557668A0 (es) Un dispositivo para proteger un circuito electrico de una transitoria de tension.
DE68900955D1 (de) Spannungspegelverwandlungsschaltung.
DE69122176D1 (de) Elektrisch leitender Film
IT8125477A0 (it) Circuito generatore di impulsi utilizzante una sorgente di corrente.
DE68926155D1 (de) Halbleiterschaltung mit einer Überspannungsschutzschaltung
DE69112568D1 (de) Hochspannungslastschalter.
ITRM920026A0 (it) Circuito di generazione di tensione di riferimento.
JPS6454758A (en) Semiconductor integrated circuit device
FR2669448B1 (fr) Architecture de terminal et circuit de gestion.
DE59003026D1 (de) Elektrisch isolierender Schaltungsträger mit integrierten Kühlmitteln.

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 260824

Country of ref document: ES