KR910013266A - 반도체 메모리 어레이의 구성방법 - Google Patents

반도체 메모리 어레이의 구성방법 Download PDF

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Publication number
KR910013266A
KR910013266A KR1019890020108A KR890020108A KR910013266A KR 910013266 A KR910013266 A KR 910013266A KR 1019890020108 A KR1019890020108 A KR 1019890020108A KR 890020108 A KR890020108 A KR 890020108A KR 910013266 A KR910013266 A KR 910013266A
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KR
South Korea
Prior art keywords
semiconductor memory
word lines
memory array
word line
word
Prior art date
Application number
KR1019890020108A
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English (en)
Other versions
KR920010344B1 (ko
Inventor
서동일
조수인
민동선
김영래
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890020108A priority Critical patent/KR920010344B1/ko
Priority to JP2069926A priority patent/JPH0792998B2/ja
Priority to DE4009836A priority patent/DE4009836C2/de
Priority to GB9006756A priority patent/GB2239558B/en
Priority to FR9004026A priority patent/FR2656725B1/fr
Priority to US07/501,758 priority patent/US5097441A/en
Priority to IT48185A priority patent/IT1241520B/it
Priority to CN90106625A priority patent/CN1021996C/zh
Publication of KR910013266A publication Critical patent/KR910013266A/ko
Application granted granted Critical
Publication of KR920010344B1 publication Critical patent/KR920010344B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5225—Shielding layers formed together with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Static Random-Access Memory (AREA)

Abstract

내용 없음.

Description

반도체 메모리 어레이의 구성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 메모리 어레이 구성도.

Claims (4)

  1. 다수의 워드라인들과, 상기 워드라인들을 구동시키기 위한 워드라인 드라이버(10)들과 상기 워드라인 드라이버를 구동시키기 위한 동수의 로우어드레스 디코더들을 구비하는 반도체 메모리 어레이에 있어서, 상기 워드라인들이 최소한 4개 이상으로 하나의 조를 형성하여 각 조에 있는 워드라인들이 최초에 인접한 워드라인과는 서로 인접하지 않도록 꼬여 있고, 상기 워드라인 드라이버(10)들이 상기 반도체 메모리 어레이의 양측에 같은 수만큼 나뉘어서 배열됨을 특징으로 하는 반도체 메모리 어레이.
  2. 제1항에 있어서, 상기 워드라인들이 워드라인 접속영역에서 꼬이게 됨을 특징으로 하는 반도체 메모리 어레이.
  3. 제1항에 있어서, 상기 워드라인들이 한번 꼬인후에도 최초에 인접한 워드라인끼리는 서로 인접하지 않도록 2회 이상 꼬여질 수 있음을 특징으로 하는 반도체 메모리 어레이.
  4. 제1항에 있어서, 상기 반도체 메모리 어레이 전체의 워드라인 드라이버(10)들의 갯수가 2N개인 경우 2K개(n〉k≥0,n,k정수)의 워드라인들을 구동시키는 동수의 워드라인 드라이버들을 한 단위로 메모리셀 어레이 양측에 번갈아 가며 배열한 방법을 특징으로 하는 반도체 메모리 설 어레이.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890020108A 1989-12-29 1989-12-29 반도체 메모리 어레이의 구성방법 KR920010344B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019890020108A KR920010344B1 (ko) 1989-12-29 1989-12-29 반도체 메모리 어레이의 구성방법
JP2069926A JPH0792998B2 (ja) 1989-12-29 1990-03-22 半導体メモリアレイ
DE4009836A DE4009836C2 (de) 1989-12-29 1990-03-27 Halbleiterspeichervorrichtung mit vermindertem Wortleitungskopplungsrauschen
GB9006756A GB2239558B (en) 1989-12-29 1990-03-27 Semiconductor memory device
FR9004026A FR2656725B1 (ko) 1989-12-29 1990-03-29
US07/501,758 US5097441A (en) 1989-12-29 1990-03-30 Interdigitated and twisted word line structure for semiconductor memories
IT48185A IT1241520B (it) 1989-12-29 1990-07-31 "dispositivo di memoria a semiconduttori".
CN90106625A CN1021996C (zh) 1989-12-29 1990-07-31 半导体存储设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020108A KR920010344B1 (ko) 1989-12-29 1989-12-29 반도체 메모리 어레이의 구성방법

Publications (2)

Publication Number Publication Date
KR910013266A true KR910013266A (ko) 1991-08-08
KR920010344B1 KR920010344B1 (ko) 1992-11-27

Family

ID=19294149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020108A KR920010344B1 (ko) 1989-12-29 1989-12-29 반도체 메모리 어레이의 구성방법

Country Status (8)

Country Link
US (1) US5097441A (ko)
JP (1) JPH0792998B2 (ko)
KR (1) KR920010344B1 (ko)
CN (1) CN1021996C (ko)
DE (1) DE4009836C2 (ko)
FR (1) FR2656725B1 (ko)
GB (1) GB2239558B (ko)
IT (1) IT1241520B (ko)

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Also Published As

Publication number Publication date
JPH03203085A (ja) 1991-09-04
GB9006756D0 (en) 1990-05-23
DE4009836C2 (de) 1994-01-27
FR2656725A1 (ko) 1991-07-05
GB2239558B (en) 1993-08-18
KR920010344B1 (ko) 1992-11-27
CN1052966A (zh) 1991-07-10
IT9048185A0 (it) 1990-07-31
CN1021996C (zh) 1993-09-01
DE4009836A1 (de) 1991-07-11
FR2656725B1 (ko) 1994-11-04
JPH0792998B2 (ja) 1995-10-09
IT1241520B (it) 1994-01-17
US5097441A (en) 1992-03-17
GB2239558A (en) 1991-07-03
IT9048185A1 (it) 1992-01-31

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