JP4564299B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JP4564299B2 JP4564299B2 JP2004220662A JP2004220662A JP4564299B2 JP 4564299 B2 JP4564299 B2 JP 4564299B2 JP 2004220662 A JP2004220662 A JP 2004220662A JP 2004220662 A JP2004220662 A JP 2004220662A JP 4564299 B2 JP4564299 B2 JP 4564299B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- row
- cell array
- decoder
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 84
- 230000015654 memory Effects 0.000 claims description 79
- 238000003491 array Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000001102 characteristic energy-loss spectroscopy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
図1はこの発明の第1実施形態に係る半導体集積回路装置の構成例を示すブロック図、図2はこの発明の第1実施形態に係る半導体集積回路装置のレイアウト例を示す平面図、図3はこの発明の第1実施形態に係る半導体集積回路装置の回路例を示す回路図である。
図8は、この発明の第2実施形態に係る半導体集積回路装置のレイアウト例を示す平面図である。
第3実施形態は、ロウデコード回路RDを、2ブロック分のレイアウトピッチ2Pに配置する例である。
Claims (4)
- 半導体チップと、
前記半導体チップに配置されたメモリセルアレイと、
前記半導体チップに、前記メモリセルアレイの両端に沿って配置された第1、第2デコーダ列とを具備し、
前記第1デコーダ列の配置位置は前記第2デコーダ列の配置位置からずれており、このずれによって生じたスペースが、前記半導体チップの隅に配置されることを特徴とする半導体集積回路装置。 - 半導体チップと、
前記半導体チップに配置された第1メモリセルアレイと、
前記半導体チップに、前記第1メモリセルアレイの両端に沿って配置された第1、第2デコーダ列と、
前記半導体チップに、前記第2デコーダ列に沿って配置された第2メモリセルアレイと、
前記半導体チップに、前記第2メモリセルアレイの両端に沿って配置された第3、第4デコーダ列とを具備し、
前記第1、第3デコーダ列の配置位置は、前記第2、第4デコーダ列の配置位置からずれており、このずれによって生じたスペースが、前記半導体チップの隅に配置されることを特徴とする半導体集積回路装置。 - 前記メモリセルアレイは、選択ゲート線、及び制御ゲート線を共有する複数のブロックを含み、
前記第1、第2デコーダ列は、前記複数のブロック毎に、それぞれ設けられたデコード回路を含み、
前記デコード回路のレイアウトピッチは、前記ブロックのレイアウトピッチの2倍であることを特徴とする請求項1に記載の半導体集積回路装置。 - 前記第1、第2メモリセルアレイは、選択ゲート線、及び制御ゲート線を共有する複数のブロックを含み、
前記第1、第2、第3、第4デコーダ列は、前記複数のブロック毎に、それぞれ設けられたデコード回路を含み、
前記デコード回路のレイアウトピッチは、前記ブロックのレイアウトピッチの2倍であることを特徴とする請求項2に記載の半導体集積回路装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220662A JP4564299B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体集積回路装置 |
PCT/JP2005/013765 WO2006011529A1 (ja) | 2004-07-28 | 2005-07-27 | 半導体集積回路装置 |
US11/668,380 US7408262B2 (en) | 2004-07-28 | 2007-01-29 | Semiconductor integrated circuit device |
US12/171,943 US7663247B2 (en) | 2004-07-28 | 2008-07-11 | Semiconductor intergrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004220662A JP4564299B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006041275A JP2006041275A (ja) | 2006-02-09 |
JP4564299B2 true JP4564299B2 (ja) | 2010-10-20 |
Family
ID=35786279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004220662A Expired - Fee Related JP4564299B2 (ja) | 2004-07-28 | 2004-07-28 | 半導体集積回路装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7408262B2 (ja) |
JP (1) | JP4564299B2 (ja) |
WO (1) | WO2006011529A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4564299B2 (ja) * | 2004-07-28 | 2010-10-20 | 株式会社東芝 | 半導体集積回路装置 |
JP2010513973A (ja) * | 2006-12-19 | 2010-04-30 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | レンズ構造体及び製造方法並びに成形ポリマー品の製造 |
US8284601B2 (en) * | 2009-04-01 | 2012-10-09 | Samsung Electronics Co., Ltd. | Semiconductor memory device comprising three-dimensional memory cell array |
US10591804B2 (en) * | 2015-03-30 | 2020-03-17 | Luminit Llc | Quantum wave-converter |
CN107533863B (zh) * | 2015-04-27 | 2021-04-02 | 索尼半导体解决方案公司 | 存储器设备、存储器系统和存储器控制方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832295A (ja) * | 1981-08-19 | 1983-02-25 | Fujitsu Ltd | 半導体記憶装置 |
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPH022668A (ja) * | 1988-06-16 | 1990-01-08 | Mitsubishi Electric Corp | 読出専用半導体記憶装置および半導体記憶装置 |
JPH03203085A (ja) * | 1989-12-29 | 1991-09-04 | Samsung Electron Co Ltd | 半導体メモリアレイ |
JPH03214669A (ja) * | 1989-03-20 | 1991-09-19 | Hitachi Ltd | 半導体記憶装置 |
JPH04162664A (ja) * | 1990-10-26 | 1992-06-08 | Nec Corp | 半導体記憶装置 |
JPH10290519A (ja) * | 1997-04-15 | 1998-10-27 | Hitachi Ltd | 半導体集積回路装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0457347B1 (en) | 1990-05-18 | 1997-01-22 | Nec Corporation | Semiconductor memory device |
JPH05275657A (ja) * | 1992-03-26 | 1993-10-22 | Toshiba Corp | 半導体記憶装置 |
US6388314B1 (en) * | 1995-08-17 | 2002-05-14 | Micron Technology, Inc. | Single deposition layer metal dynamic random access memory |
US6172935B1 (en) * | 1997-04-25 | 2001-01-09 | Micron Technology, Inc. | Synchronous dynamic random access memory device |
US5892703A (en) * | 1997-06-13 | 1999-04-06 | Micron Technology, Inc, | Memory architecture and decoder addressing |
JPH11195766A (ja) | 1997-10-31 | 1999-07-21 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JP3768761B2 (ja) | 2000-01-31 | 2006-04-19 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
JP4564299B2 (ja) * | 2004-07-28 | 2010-10-20 | 株式会社東芝 | 半導体集積回路装置 |
-
2004
- 2004-07-28 JP JP2004220662A patent/JP4564299B2/ja not_active Expired - Fee Related
-
2005
- 2005-07-27 WO PCT/JP2005/013765 patent/WO2006011529A1/ja active Application Filing
-
2007
- 2007-01-29 US US11/668,380 patent/US7408262B2/en not_active Expired - Fee Related
-
2008
- 2008-07-11 US US12/171,943 patent/US7663247B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5832295A (ja) * | 1981-08-19 | 1983-02-25 | Fujitsu Ltd | 半導体記憶装置 |
JPS6211262A (ja) * | 1985-07-08 | 1987-01-20 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPH022668A (ja) * | 1988-06-16 | 1990-01-08 | Mitsubishi Electric Corp | 読出専用半導体記憶装置および半導体記憶装置 |
JPH03214669A (ja) * | 1989-03-20 | 1991-09-19 | Hitachi Ltd | 半導体記憶装置 |
JPH03203085A (ja) * | 1989-12-29 | 1991-09-04 | Samsung Electron Co Ltd | 半導体メモリアレイ |
JPH04162664A (ja) * | 1990-10-26 | 1992-06-08 | Nec Corp | 半導体記憶装置 |
JPH10290519A (ja) * | 1997-04-15 | 1998-10-27 | Hitachi Ltd | 半導体集積回路装置 |
Also Published As
Publication number | Publication date |
---|---|
US7408262B2 (en) | 2008-08-05 |
US20080008004A1 (en) | 2008-01-10 |
JP2006041275A (ja) | 2006-02-09 |
WO2006011529A1 (ja) | 2006-02-02 |
US7663247B2 (en) | 2010-02-16 |
US20090008680A1 (en) | 2009-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100648553B1 (ko) | 각각이 부유 게이트와 제어 게이트를 갖는 mos트랜지스터들을 구비한 반도체 메모리 장치와, 이것을포함하는 메모리 카드 | |
US8139407B2 (en) | Nonvolatile semiconductor memory device including NAND-type flash memory and the like | |
JP3884397B2 (ja) | 不揮発性半導体記憶装置 | |
US20140133244A1 (en) | Twin MONOS Array for High Speed Application | |
JP2005268621A (ja) | 半導体集積回路装置 | |
JP2007266209A (ja) | Fin型メモリセル | |
JP2008234820A (ja) | 半導体記憶装置 | |
JP2005116970A (ja) | 不揮発性半導体記憶装置 | |
JP2013021202A (ja) | 半導体記憶装置 | |
JP4564476B2 (ja) | 半導体装置 | |
WO2006011529A1 (ja) | 半導体集積回路装置 | |
US8233325B2 (en) | NAND flash memory | |
JP2008103643A (ja) | 不揮発性半導体メモリ | |
JP4469651B2 (ja) | 不揮発性半導体記憶装置 | |
US8558602B2 (en) | Semiconductor integrated circuit | |
US20070206398A1 (en) | Semiconductor memory | |
US7382653B2 (en) | Electrically rewritable non-volatile semiconductor memory device | |
JP2008004196A (ja) | 半導体メモリ装置 | |
JP2009272000A (ja) | 不揮発性半導体記憶装置およびそのテスト方法 | |
JP2009094103A (ja) | 半導体装置 | |
KR100825525B1 (ko) | 반도체 집적 회로 장치 | |
US20090147583A1 (en) | Semiconductor memory device having mat structure | |
JP2009283665A (ja) | 不揮発性半導体記憶装置 | |
JP6836122B2 (ja) | 半導体記憶装置、集積回路装置、及び、電子機器 | |
JP2022043742A (ja) | 半導体記憶装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20061212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100706 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100730 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130806 Year of fee payment: 3 |
|
LAPS | Cancellation because of no payment of annual fees |