KR910007145A - 버랙터 다이오드의 스무더 정밀분류 방법 - Google Patents

버랙터 다이오드의 스무더 정밀분류 방법 Download PDF

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Publication number
KR910007145A
KR910007145A KR1019900014977A KR900014977A KR910007145A KR 910007145 A KR910007145 A KR 910007145A KR 1019900014977 A KR1019900014977 A KR 1019900014977A KR 900014977 A KR900014977 A KR 900014977A KR 910007145 A KR910007145 A KR 910007145A
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South Korea
Prior art keywords
diode
lead frame
picked
silicon wafer
smoother
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KR1019900014977A
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English (en)
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KR0142187B1 (ko
Inventor
파쉬케 클라우스
지펠 로란트
Original Assignee
호르스트 에프. 예니쉬. 볼파강 자우어
도이취 아이티티 인터스트리스 게젤샤프트 미트 베쉬랭크터 하프퉁
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Application filed by 호르스트 에프. 예니쉬. 볼파강 자우어, 도이취 아이티티 인터스트리스 게젤샤프트 미트 베쉬랭크터 하프퉁 filed Critical 호르스트 에프. 예니쉬. 볼파강 자우어
Publication of KR910007145A publication Critical patent/KR910007145A/ko
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Publication of KR0142187B1 publication Critical patent/KR0142187B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/01—Subjecting similar articles in turn to test, e.g. "go/no-go" tests in mass production; Testing objects at points as they pass through a testing station
    • G01R31/013—Testing passive components
    • G01R31/016—Testing of capacitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/028—Dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/162—Testing steps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

내용 없음

Description

버렉터 다이오드의 스무더 정밀분류 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 복수의 다이오드 다이스를 갖는 실리콘 웨이퍼의 개략도

Claims (3)

  1. 동일한 전기 파라미터를 갖는 버렉터 다이오드의 스무더 정밀 분류를 위한 방법에 있어서, 실리콘 웨이퍼(1)상에 형성되며, 실리콘 웨이퍼가 다이스되어 시이트에 의해 홀드된 후에, 굴곡 경로를 따라 픽업되어 리이드 프레임상에 장착, 결합되고 플라스틱 캡슐로 싸여지는 다이오드, 즉 다이오드 다이스(2)를 제조하는 단계를 포함하는데, 상기 리이드 프레임은 주석으로 도금된 후에 교차 결합이 제거되는 스탬핑 디바이스로 유도되며, 상기 다이오드 및 그 사이에 장착된 리이드 와이어의 세로 결합으로 구성된 나머지 리이드 프레임은 제2스탬핑 디바이스로 유도되며, 상기 다이오드는 상기 리이드 프레임으로부터 분리되며 파라미터를 결정하기 위해 개별 측정부로 유도하는 클록식 측정휠의 클램핑 디바이스에 의해 각각 그랩스프되고, 허용 오차 한계밖에 있는 상기 다이오드는 제거되며, 상기 요건에 일치하는 다이오드는 픽업되어 콘베이어 벨트상에 버퍼휠을 통해 배치되는 것을 특징으로 하는 버랙터 다이오드의 스무더 정밀분류방법.
  2. 제 1 항에 있어서, 상기 다이오드 디바이스(2)는 실리콘 웨이퍼(1)를 횡단하는 온도 변화율에 수직인 굴곡 경로를 따라 픽업되는 것을 특징으로 하는 방법.
  3. 제 1 항 또는 제 2 항에 있어서, 상기 다이오드 다이스는 합금에 의해 리이드 프레임상에 장착되는 것을 특징으로 하는 방법.
    ※ 참고사항 : 최초 출원 내용에 의하여 공개하는 것임.
KR1019900014977A 1989-09-21 1990-09-21 버랙터 다이오드의스무더 정밀분류 방법 KR0142187B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE39314952 1989-09-21
DEP39314952 1989-09-21
DE3931495A DE3931495C2 (de) 1989-09-21 1989-09-21 Verfahren zur "fließenden" Feinklassifizierung von Kapazitätsdioden
EP19900111156 EP0418477A3 (en) 1989-09-21 1990-06-13 Fine classification process for capacity diodes
EP90111156.7 1990-06-13

Publications (2)

Publication Number Publication Date
KR910007145A true KR910007145A (ko) 1991-04-30
KR0142187B1 KR0142187B1 (ko) 1998-06-01

Family

ID=6389876

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900014977A KR0142187B1 (ko) 1989-09-21 1990-09-21 버랙터 다이오드의스무더 정밀분류 방법

Country Status (5)

Country Link
US (1) US5102818A (ko)
EP (1) EP0418477A3 (ko)
KR (1) KR0142187B1 (ko)
DE (1) DE3931495C2 (ko)
MY (1) MY106852A (ko)

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Also Published As

Publication number Publication date
DE3931495C2 (de) 1997-06-26
EP0418477A2 (de) 1991-03-27
US5102818A (en) 1992-04-07
DE3931495A1 (de) 1991-04-04
EP0418477A3 (en) 1991-11-27
KR0142187B1 (ko) 1998-06-01
MY106852A (en) 1995-08-30

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