KR910001185B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR910001185B1
KR910001185B1 KR1019870003023A KR870003023A KR910001185B1 KR 910001185 B1 KR910001185 B1 KR 910001185B1 KR 1019870003023 A KR1019870003023 A KR 1019870003023A KR 870003023 A KR870003023 A KR 870003023A KR 910001185 B1 KR910001185 B1 KR 910001185B1
Authority
KR
South Korea
Prior art keywords
mos transistor
gate
transistor
vcc
load
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870003023A
Other languages
English (en)
Korean (ko)
Other versions
KR870009398A (ko
Inventor
시게루 아츠미
스미오 다나까
노부아끼 오츠카
다까희시 가메이
Original Assignee
가부시끼가이샤 도시바
와타리 스기이치로
도시바 마이콤 엔지니어링 가부시끼가이샤
다케다이 마사다카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도시바, 와타리 스기이치로, 도시바 마이콤 엔지니어링 가부시끼가이샤, 다케다이 마사다카 filed Critical 가부시끼가이샤 도시바
Publication of KR870009398A publication Critical patent/KR870009398A/ko
Application granted granted Critical
Publication of KR910001185B1 publication Critical patent/KR910001185B1/ko
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
KR1019870003023A 1986-03-21 1987-03-31 반도체기억장치 Expired KR910001185B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-73002 1986-03-21
JP73002 1986-03-31
JP61073002A JPS62231500A (ja) 1986-03-31 1986-03-31 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR870009398A KR870009398A (ko) 1987-10-26
KR910001185B1 true KR910001185B1 (ko) 1991-02-25

Family

ID=13505714

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870003023A Expired KR910001185B1 (ko) 1986-03-21 1987-03-31 반도체기억장치

Country Status (4)

Country Link
EP (1) EP0244628B1 (enExample)
JP (1) JPS62231500A (enExample)
KR (1) KR910001185B1 (enExample)
DE (1) DE3767022D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758600B2 (ja) * 1986-05-23 1995-06-21 日本電気株式会社 半導体装置
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置
DE68926124T2 (de) * 1988-06-24 1996-09-19 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
US4851720A (en) * 1988-09-02 1989-07-25 Cypress Semiconductor Corporation Low power sense amplifier for programmable logic device
JPH0814994B2 (ja) * 1989-01-13 1996-02-14 株式会社東芝 半導体記憶装置
JP2558904B2 (ja) * 1990-01-19 1996-11-27 株式会社東芝 半導体集積回路
KR0142368B1 (ko) * 1994-09-09 1998-07-15 김광호 불휘발성 반도체 메모리장치의 자동프로그램 회로
EP0782250B1 (en) * 1995-12-29 2001-05-30 STMicroelectronics S.r.l. Offset compensating method and circuit for MOS differential stages
DE69721724T2 (de) * 1997-02-28 2004-03-25 Stmicroelectronics S.R.L., Agrate Brianza Spannungspegelumsetzungsverfahren, insbesondere für nichtflüchtigen Speicher
CN103983955B (zh) * 2014-05-15 2017-05-17 中国电子科技集团公司第四十一研究所 一种收发组件测试中电源监控方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993917A (en) * 1975-05-29 1976-11-23 International Business Machines Corporation Parameter independent FET sense amplifier
US4158241A (en) * 1978-06-15 1979-06-12 Fujitsu Limited Semiconductor memory device with a plurality of memory cells and a sense amplifier circuit thereof
JPS5824874B2 (ja) * 1979-02-07 1983-05-24 富士通株式会社 センス回路
US4435788A (en) * 1981-01-30 1984-03-06 Texas Instruments Incorporated Nonvolatile semiconductor memory device
JPS57198594A (en) * 1981-06-01 1982-12-06 Hitachi Ltd Semiconductor storage device
US4421996A (en) * 1981-10-09 1983-12-20 Advanced Micro Devices, Inc. Sense amplification scheme for random access memory
US4611301A (en) * 1983-04-07 1986-09-09 Kabushiki Kaisha Toshiba Read only memory
US4551641A (en) * 1983-11-23 1985-11-05 Motorola, Inc. Sense amplifier

Also Published As

Publication number Publication date
EP0244628A1 (en) 1987-11-11
EP0244628B1 (en) 1990-12-27
JPS62231500A (ja) 1987-10-12
JPH0444360B2 (enExample) 1992-07-21
DE3767022D1 (de) 1991-02-07
KR870009398A (ko) 1987-10-26

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