KR900019232A - 발진회로 - Google Patents

발진회로 Download PDF

Info

Publication number
KR900019232A
KR900019232A KR1019900007074A KR900007074A KR900019232A KR 900019232 A KR900019232 A KR 900019232A KR 1019900007074 A KR1019900007074 A KR 1019900007074A KR 900007074 A KR900007074 A KR 900007074A KR 900019232 A KR900019232 A KR 900019232A
Authority
KR
South Korea
Prior art keywords
mos transistor
oscillation
type mos
quot
insulating film
Prior art date
Application number
KR1019900007074A
Other languages
English (en)
Other versions
KR930002286B1 (ko
Inventor
히토시 곤도
히로유키 수와베
아이키 고지마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
다케다이 아사다카
도시바 마이크로 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바, 다케다이 아사다카, 도시바 마이크로 일렉트로닉스 가부시키가이샤 filed Critical 아오이 죠이치
Publication of KR900019232A publication Critical patent/KR900019232A/ko
Application granted granted Critical
Publication of KR930002286B1 publication Critical patent/KR930002286B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/027—Generators characterised by the type of circuit or by the means used for producing pulses by the use of logic circuits, with internal or external positive feedback
    • H03K3/03—Astable circuits
    • H03K3/0307—Stabilisation of output, e.g. using crystal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
    • H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
    • H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음

Description

발진회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 발진회로의 1실시예를 나타낸 구성 설명도, 제2도(a)는 제1도중의 발진회로부분의 소자의 평명패턴의 일례를 나타낸 도면, 제2도(b)는 제2도(a)중의 B-B선으로 잘랐을때의 단면도

Claims (3)

  1. 집적회로외부의 음차형 진동자(X′tal)를 접속시키기 위한 발진입력단자(Xin) 및 발진출력단자(Xout)를 갖춘 반도체집적회로장치내에 설치된 발진회로(OSC″)에 있어서, 상기 진동자(X′tal)로부터 상기 발진입력단자(Xin)로 공급된 신호를 입력으로 하고, 상기 발진출력단자(Xout)로 출력신호를 공급하는 반전논리회로(Ⅳ1)와, 소오스 또는 드레인전극의 어느 한쪽이 상기 발진 입력단자(Xin)에, 다른쪽이 상기 발진출력단자(Xout)에 접속되고 게이트전극에 소정의 제1전위(VDD)가 인가됨에 의해 도통상태로 되는 N형 MOS트랜지스터(N1″)와, 소오스 또는 드레인전극의 어느 한쪽이 상기 발진입력단자(Xin)에, 다른 쪽이 상기발진출력단자(Xout)에 접속되고 게이트전극에 소정의 제2전위가 인가됨에 의와, 도통상태로 되는 P형 MOS트랜지스터(P1″)가 구비되어 있으며, 상기 N형 MOS트랜지스터(N1″)와 P형 MOS트랜지스터(P1″)의 어느 한쪽 또는 양쪽에 채널저항이 소정의 고저항이 되도록 그 게이트절연막(21,23″)이 동일한 반도체 집적회로 장치내에 존재하는 다른 MOS트랜지스터의 게이트절연막(21)보다도 두껍게 형성되어 있는 것을 특징으로 하는 발진회로.
  2. 제1항에 있어서, 상기 N형 MOS트랜지스터(N1″)와 P형 MOS트랜지스터(P1″)의 어느 한쪽 또느 양쪽에 그 게이트절연막으로서 동일한 반도체집적회로장치내에 존재하는 다른 MOS트랜지스터의 게이트절연막(21)과 같은 게이트절연막 및 그 위의 층간(23″)이 사용되고, 그 게이트 전극으로서 상기 층간절연막(23″)상에 형성되는 금속배선층(24″)이 사용되고 있는 것을 특징으로 하는 발진회로.
  3. 제1항 또는 제2항에 있어서, 상기 반전논리회로(Ⅳ1)로 발진제어신호에 의해 반전동작의 가부가 제어되도록 구성되며, 또한 상기 N형 MOS트랜지스터(N1″)와 P형 MOS트랜지스터(P1″)는 발진제어신호(EN)에 의해 게이트전위가 제어되어 동시에 각각 도통상태로 또는 각각 비도통상태로 되는 것을 특징으로 하는 발진회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900007074A 1989-05-17 1990-05-17 발진회로 KR930002286B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP12376289 1989-05-17
JP1-123762 1989-05-17
JP01-123762 1989-05-17

Publications (2)

Publication Number Publication Date
KR900019232A true KR900019232A (ko) 1990-12-24
KR930002286B1 KR930002286B1 (ko) 1993-03-29

Family

ID=14868652

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007074A KR930002286B1 (ko) 1989-05-17 1990-05-17 발진회로

Country Status (5)

Country Link
US (1) US5025230A (ko)
EP (1) EP0398331B1 (ko)
JP (1) JPH0372669A (ko)
KR (1) KR930002286B1 (ko)
DE (1) DE69021632T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0637073A1 (en) * 1993-07-29 1995-02-01 STMicroelectronics S.r.l. Process for realizing low threshold P-channel MOS transistors for complementary devices (CMOS)
US5416445A (en) * 1993-08-02 1995-05-16 Nec Corporation Low power-consumption clock pulse generator with two clock sources selectively available
JP3406949B2 (ja) * 1995-01-31 2003-05-19 キヤノン株式会社 半導体集積回路装置
US5546055A (en) * 1995-08-24 1996-08-13 Dallas Semiconductor Corp. Crystal oscillator bias stabilizer
DE19621228A1 (de) * 1996-05-25 1997-11-27 Itt Ind Gmbh Deutsche Digital einstellbarer Quarzoszillator mit monolithisch integrierter Oszillatorschaltung
JPH10135789A (ja) * 1996-10-28 1998-05-22 Oki Electric Ind Co Ltd 発振回路
JP2000174135A (ja) * 1998-12-07 2000-06-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
SE9902114D0 (sv) * 1999-06-07 1999-06-07 Astra Ab Electrical device
JP3719242B2 (ja) * 2002-09-11 2005-11-24 セイコーエプソン株式会社 半導体装置及び発振回路
JP2005136664A (ja) * 2003-10-30 2005-05-26 Oki Electric Ind Co Ltd 発振回路
US11043916B2 (en) * 2015-05-11 2021-06-22 KVG Quarts Crystal Technology GmbH Oscillator with reduced acceleration sensitivity

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4941055A (ko) * 1972-08-28 1974-04-17
EP0166386A3 (de) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik
US4704587A (en) * 1986-12-04 1987-11-03 Western Digital Corporation Crystal oscillator circuit for fast reliable start-up
JP2573266B2 (ja) * 1987-12-18 1997-01-22 株式会社東芝 発振回路

Also Published As

Publication number Publication date
KR930002286B1 (ko) 1993-03-29
EP0398331A3 (en) 1993-05-26
US5025230A (en) 1991-06-18
DE69021632D1 (de) 1995-09-21
DE69021632T2 (de) 1996-02-22
EP0398331A2 (en) 1990-11-22
JPH0372669A (ja) 1991-03-27
EP0398331B1 (en) 1995-08-16

Similar Documents

Publication Publication Date Title
KR900012372A (ko) 절연-게이트 필드 효과트랜지스터를 포함한 집적 반도체 장치
KR890008849A (ko) 퓨우즈 상태 검출회로
KR920010900A (ko) 반도체지연회로
KR900019232A (ko) 발진회로
KR920010888A (ko) 입력보호회로를 갖춘 반도체 장치
KR880012008A (ko) 전원절환회로
KR890005977A (ko) 증폭기 장치
US3979698A (en) Crystal oscillator circuit
KR100890849B1 (ko) 기준전압회로 및 전자기기
KR920015378A (ko) 기판 바이어스 회로
KR880004589A (ko) 기판바이어스 전압발생기를 구비한 상보형 집적회로 배열
KR890009000A (ko) 디지탈 집적 회로
KR20000028857A (ko) 지연 회로
KR880008537A (ko) 단일체 집적 회로 및 집적 논리 회로
KR950012714A (ko) 상보형 금속 산화물 반도체(cmos) 기술의 집적 전자 회로용 극성 반전 보호장치
US4048590A (en) Integrated crystal oscillator circuit with few external components
WO2003003559A1 (en) An electrical oscillator circuit and an integrated circuit
KR920004225B1 (ko) 마스터 슬라이스(Master slice)방법을 사용하여 반도체 집적회로를 형성하는 방법
KR940020669A (ko) 바이어스 회로(bias circuit)
FR2490895B1 (fr) Circuit d'entretien pour oscillateur a faible consommation de courant
JPH0624319B2 (ja) 入力回路
KR890001104A (ko) 반도체집적회로
JP5407778B2 (ja) 半導体集積回路及び発振回路
KR860000748A (ko) 발진기 혼합기 회로
KR890001283A (ko) 발생기 회로

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030228

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee