KR900008520A - 불휘발성 메모리 - Google Patents

불휘발성 메모리

Info

Publication number
KR900008520A
KR900008520A KR1019890016148A KR890016148A KR900008520A KR 900008520 A KR900008520 A KR 900008520A KR 1019890016148 A KR1019890016148 A KR 1019890016148A KR 890016148 A KR890016148 A KR 890016148A KR 900008520 A KR900008520 A KR 900008520A
Authority
KR
South Korea
Prior art keywords
data read
read line
circuit
line dbl
dbl
Prior art date
Application number
KR1019890016148A
Other languages
English (en)
Other versions
KR930000765B1 (ko
Inventor
와다유키오
마루야마다다시
나카무라도사마사
Original Assignee
가부시키가이샤도시바
도시바마이코로일렉트로닉스가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤도시바, 도시바마이코로일렉트로닉스가부시키가이샤 filed Critical 가부시키가이샤도시바
Publication of KR900008520A publication Critical patent/KR900008520A/ko
Application granted granted Critical
Publication of KR930000765B1 publication Critical patent/KR930000765B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

내용 없음.

Description

불휘발성 메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 1실시예의 구성을 나타낸 회로도,
제2도는 제1도 회로에 대한 타이밍차트.

Claims (2)

  1. 제1부하회로(2)를 매개하여 제1전원(Vcc)에 접속된 제1데이터독출선(BL)과, 이 제1데이터독출선(BL)과 제2전원(Vss) 사이에 삽입된 불휘발성 트랜지스터(1)로 이루어진 메모리셀, 제2부하회로(4)를 매개하여 상기 제1전원(Vcc)에 접속된 제2데이터독출선(DBL), 이 제2데이터독출선(DBL)과 제2전원(Vss) 사이에 삽입된 불 휘발성 트랜지스터(3)로 이루어진 더미셀 및, 상기 제1데이터독출선(BL)이 한쪽 입력단자에 접속되면서 상기 제2데이터 독출선(DBL)이 다른쪽 입력단자에 각각 접속된 플립플롭회로(6)와 이 플립플롭회로(6)의 출력데이터를 래치하는 래치회로(7)로 이루어진 감지증폭기회로(5)로 구성된 것을 특징으로 하는 불휘발성 메모리.
  2. 제1항에 있어서, 상기 더미셀의 전류를 흘리는 능력이 상기 메모리셀보다도 작게 설정되어 있는 것을 특징으로 하는 불휘발성 메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890016148A 1988-11-09 1989-11-08 불휘발성 메모리 KR930000765B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP28319888A JP2573335B2 (ja) 1988-11-09 1988-11-09 不揮発性メモリ
JP63-283198 1988-11-09
JP88-283198 1988-11-09

Publications (2)

Publication Number Publication Date
KR900008520A true KR900008520A (ko) 1990-06-03
KR930000765B1 KR930000765B1 (ko) 1993-02-01

Family

ID=17662403

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016148A KR930000765B1 (ko) 1988-11-09 1989-11-08 불휘발성 메모리

Country Status (5)

Country Link
US (1) US5058062A (ko)
EP (1) EP0368310B1 (ko)
JP (1) JP2573335B2 (ko)
KR (1) KR930000765B1 (ko)
DE (1) DE68921415T2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573392B2 (ja) * 1990-03-30 1997-01-22 株式会社東芝 半導体記憶装置
JP2637314B2 (ja) * 1991-08-30 1997-08-06 株式会社東芝 不揮発性メモリ回路
JP2819964B2 (ja) * 1992-10-01 1998-11-05 日本電気株式会社 不揮発性半導体記憶装置
DE4302195C2 (de) * 1993-01-27 1996-12-19 Telefunken Microelectron Verfahren zum Betrieb eines nichtflüchtigen Halbleiterspeichers
US5511031A (en) * 1994-08-31 1996-04-23 International Business Machines Corporation Semiconductor memory system having sense amplifier being activated late during clock cycle
WO1997050089A1 (en) * 1996-06-24 1997-12-31 Advanced Micro Devices, Inc. A method for a multiple bits-per-cell flash eeprom with page mode program and read
US7746716B2 (en) 2007-02-22 2010-06-29 Freescale Semiconductor, Inc. Memory having a dummy bitline for timing control
JP4853793B2 (ja) * 2007-11-30 2012-01-11 喜三 高荷 上刃ホルダー及び上刃ホルダーを用いたカッター
JP5708007B2 (ja) * 2011-02-17 2015-04-30 セイコーエプソン株式会社 不揮発性記憶装置、集積回路装置、及び電子機器
US10163475B2 (en) * 2016-12-14 2018-12-25 Samsung Electronics Co., Ltd. Non-volatile memory device having dummy cells and memory system including the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031524A (en) * 1975-10-17 1977-06-21 Teletype Corporation Read-only memories, and readout circuits therefor
US4144590A (en) * 1976-12-29 1979-03-13 Texas Instruments Incorporated Intermediate output buffer circuit for semiconductor memory device
JPS53117341A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
JPS6014438B2 (ja) * 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
US4384349A (en) * 1979-10-01 1983-05-17 Texas Instruments Incorporated High density electrically erasable floating gate dual-injection programmable memory device
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4270190A (en) * 1979-12-27 1981-05-26 Rca Corporation Small signal memory system with reference signal
JPS57130292A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
IE55327B1 (en) * 1981-12-29 1990-08-15 Fujitsu Ltd Nonvolatile semiconductor memory circuit
JPS60150297A (ja) * 1984-01-13 1985-08-07 Nec Corp 記憶装置
JPS6177198A (ja) * 1984-09-21 1986-04-19 Toshiba Corp 半導体記憶装置
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
US4769787A (en) * 1985-07-26 1988-09-06 Hitachi, Ltd. Semiconductor memory device
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4819212A (en) * 1986-05-31 1989-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with readout test circuitry
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
JPS6425394A (en) * 1987-07-21 1989-01-27 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置

Also Published As

Publication number Publication date
KR930000765B1 (ko) 1993-02-01
EP0368310A3 (en) 1991-05-29
JP2573335B2 (ja) 1997-01-22
JPH02130796A (ja) 1990-05-18
EP0368310A2 (en) 1990-05-16
DE68921415T2 (de) 1995-07-27
DE68921415D1 (de) 1995-04-06
US5058062A (en) 1991-10-15
EP0368310B1 (en) 1995-03-01

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