DE68921415T2 - Nichtflüchtige Speicheranordnung, fähig zum Liefern richtiger Lesedaten zu einem bestimmten Zeitpunkt. - Google Patents

Nichtflüchtige Speicheranordnung, fähig zum Liefern richtiger Lesedaten zu einem bestimmten Zeitpunkt.

Info

Publication number
DE68921415T2
DE68921415T2 DE68921415T DE68921415T DE68921415T2 DE 68921415 T2 DE68921415 T2 DE 68921415T2 DE 68921415 T DE68921415 T DE 68921415T DE 68921415 T DE68921415 T DE 68921415T DE 68921415 T2 DE68921415 T2 DE 68921415T2
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
device capable
read data
particular time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921415T
Other languages
English (en)
Other versions
DE68921415D1 (de
Inventor
Yukio C O Intellectual Pr Wada
Tadashi C O Intellect Maruyama
Toshimasa C O Intelle Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE68921415D1 publication Critical patent/DE68921415D1/de
Application granted granted Critical
Publication of DE68921415T2 publication Critical patent/DE68921415T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
DE68921415T 1988-11-09 1989-11-09 Nichtflüchtige Speicheranordnung, fähig zum Liefern richtiger Lesedaten zu einem bestimmten Zeitpunkt. Expired - Fee Related DE68921415T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28319888A JP2573335B2 (ja) 1988-11-09 1988-11-09 不揮発性メモリ

Publications (2)

Publication Number Publication Date
DE68921415D1 DE68921415D1 (de) 1995-04-06
DE68921415T2 true DE68921415T2 (de) 1995-07-27

Family

ID=17662403

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921415T Expired - Fee Related DE68921415T2 (de) 1988-11-09 1989-11-09 Nichtflüchtige Speicheranordnung, fähig zum Liefern richtiger Lesedaten zu einem bestimmten Zeitpunkt.

Country Status (5)

Country Link
US (1) US5058062A (de)
EP (1) EP0368310B1 (de)
JP (1) JP2573335B2 (de)
KR (1) KR930000765B1 (de)
DE (1) DE68921415T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573392B2 (ja) * 1990-03-30 1997-01-22 株式会社東芝 半導体記憶装置
JP2637314B2 (ja) * 1991-08-30 1997-08-06 株式会社東芝 不揮発性メモリ回路
JP2819964B2 (ja) * 1992-10-01 1998-11-05 日本電気株式会社 不揮発性半導体記憶装置
DE4302195C2 (de) * 1993-01-27 1996-12-19 Telefunken Microelectron Verfahren zum Betrieb eines nichtflüchtigen Halbleiterspeichers
US5511031A (en) * 1994-08-31 1996-04-23 International Business Machines Corporation Semiconductor memory system having sense amplifier being activated late during clock cycle
WO1997050089A1 (en) * 1996-06-24 1997-12-31 Advanced Micro Devices, Inc. A method for a multiple bits-per-cell flash eeprom with page mode program and read
US7746716B2 (en) * 2007-02-22 2010-06-29 Freescale Semiconductor, Inc. Memory having a dummy bitline for timing control
JP4853793B2 (ja) * 2007-11-30 2012-01-11 喜三 高荷 上刃ホルダー及び上刃ホルダーを用いたカッター
JP5708007B2 (ja) * 2011-02-17 2015-04-30 セイコーエプソン株式会社 不揮発性記憶装置、集積回路装置、及び電子機器
US10163475B2 (en) * 2016-12-14 2018-12-25 Samsung Electronics Co., Ltd. Non-volatile memory device having dummy cells and memory system including the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4031524A (en) * 1975-10-17 1977-06-21 Teletype Corporation Read-only memories, and readout circuits therefor
US4144590A (en) * 1976-12-29 1979-03-13 Texas Instruments Incorporated Intermediate output buffer circuit for semiconductor memory device
JPS53117341A (en) * 1977-03-24 1978-10-13 Toshiba Corp Semiconductor memory
US4223394A (en) * 1979-02-13 1980-09-16 Intel Corporation Sensing amplifier for floating gate memory devices
JPS6014438B2 (ja) * 1979-08-29 1985-04-13 株式会社東芝 不揮発性半導体メモリ−
US4384349A (en) * 1979-10-01 1983-05-17 Texas Instruments Incorporated High density electrically erasable floating gate dual-injection programmable memory device
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array
US4270190A (en) * 1979-12-27 1981-05-26 Rca Corporation Small signal memory system with reference signal
JPS57130292A (en) * 1981-02-05 1982-08-12 Toshiba Corp Semiconductor nonvolatile read-only storage device
IE55327B1 (en) * 1981-12-29 1990-08-15 Fujitsu Ltd Nonvolatile semiconductor memory circuit
JPS60150297A (ja) * 1984-01-13 1985-08-07 Nec Corp 記憶装置
JPS6177198A (ja) * 1984-09-21 1986-04-19 Toshiba Corp 半導体記憶装置
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
US4654831A (en) * 1985-04-11 1987-03-31 Advanced Micro Devices, Inc. High speed CMOS current sense amplifier
KR940011426B1 (ko) * 1985-07-26 1994-12-15 가부시기가이샤 히다찌세이사꾸쇼 반도체 기억 장치
US4713797A (en) * 1985-11-25 1987-12-15 Motorola Inc. Current mirror sense amplifier for a non-volatile memory
US4819212A (en) * 1986-05-31 1989-04-04 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with readout test circuitry
JPS63252481A (ja) * 1987-04-09 1988-10-19 Toshiba Corp 不揮発性半導体メモリ
JPS6425394A (en) * 1987-07-21 1989-01-27 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPH0770235B2 (ja) * 1988-06-24 1995-07-31 株式会社東芝 不揮発性メモリ回路装置

Also Published As

Publication number Publication date
EP0368310B1 (de) 1995-03-01
KR930000765B1 (ko) 1993-02-01
US5058062A (en) 1991-10-15
DE68921415D1 (de) 1995-04-06
JPH02130796A (ja) 1990-05-18
EP0368310A2 (de) 1990-05-16
KR900008520A (ko) 1990-06-03
EP0368310A3 (de) 1991-05-29
JP2573335B2 (ja) 1997-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee