KR900003940B1 - 상보형(相補形) 금속산화막 반도체 직접회로장치 - Google Patents

상보형(相補形) 금속산화막 반도체 직접회로장치 Download PDF

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Publication number
KR900003940B1
KR900003940B1 KR1019850001644A KR850001644A KR900003940B1 KR 900003940 B1 KR900003940 B1 KR 900003940B1 KR 1019850001644 A KR1019850001644 A KR 1019850001644A KR 850001644 A KR850001644 A KR 850001644A KR 900003940 B1 KR900003940 B1 KR 900003940B1
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South Korea
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well
diffusion region
type diffusion
type
substrate
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Expired
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KR1019850001644A
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Korean (ko)
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KR850007315A (ko
Inventor
겐지 이나미
마시히꼬 요시모도
사도루 가모도
Original Assignee
미쓰비시전기 주식회사
카다야마히도하지로
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Publication of KR850007315A publication Critical patent/KR850007315A/ko
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Publication of KR900003940B1 publication Critical patent/KR900003940B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019850001644A 1984-04-28 1985-03-14 상보형(相補形) 금속산화막 반도체 직접회로장치 Expired KR900003940B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP86875 1984-04-28
JP59086875A JPS60231356A (ja) 1984-04-28 1984-04-28 相補形金属酸化膜半導体集積回路装置
JP59-86875 1984-04-28

Publications (2)

Publication Number Publication Date
KR850007315A KR850007315A (ko) 1985-12-02
KR900003940B1 true KR900003940B1 (ko) 1990-06-04

Family

ID=13898998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850001644A Expired KR900003940B1 (ko) 1984-04-28 1985-03-14 상보형(相補形) 금속산화막 반도체 직접회로장치

Country Status (4)

Country Link
US (1) US4772930A (enExample)
JP (1) JPS60231356A (enExample)
KR (1) KR900003940B1 (enExample)
GB (1) GB2158640B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS648659A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Supplementary semiconductor integrated circuit device
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
US6563730B1 (en) 2002-04-09 2003-05-13 National Semiconductor Corporation Low power static RAM architecture
US6711051B1 (en) 2002-09-05 2004-03-23 National Semiconductor Corporation Static RAM architecture with bit line partitioning

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (enExample) * 1969-09-05 1973-11-06
JPS5534582B2 (enExample) * 1974-06-24 1980-09-08
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
GB1558502A (en) * 1975-07-18 1980-01-03 Tokyo Shibaura Electric Co Semiconductor integrated circuit device
GB1559581A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device
JPS5234680A (en) * 1975-09-12 1977-03-16 Toshiba Corp Integrated circuit
US4035826A (en) * 1976-02-23 1977-07-12 Rca Corporation Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
EP0084000A3 (en) * 1982-01-11 1985-07-10 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Cmos device
JPS58127348A (ja) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp 大規模半導体集積回路装置
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS6136946A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS60231356A (ja) 1985-11-16
GB2158640A (en) 1985-11-13
KR850007315A (ko) 1985-12-02
JPH0144023B2 (enExample) 1989-09-25
US4772930A (en) 1988-09-20
GB8510505D0 (en) 1985-05-30
GB2158640B (en) 1988-02-24

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