KR900003940B1 - 상보형(相補形) 금속산화막 반도체 직접회로장치 - Google Patents

상보형(相補形) 금속산화막 반도체 직접회로장치 Download PDF

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Publication number
KR900003940B1
KR900003940B1 KR1019850001644A KR850001644A KR900003940B1 KR 900003940 B1 KR900003940 B1 KR 900003940B1 KR 1019850001644 A KR1019850001644 A KR 1019850001644A KR 850001644 A KR850001644 A KR 850001644A KR 900003940 B1 KR900003940 B1 KR 900003940B1
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KR
South Korea
Prior art keywords
well
diffusion region
type diffusion
type
substrate
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KR1019850001644A
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English (en)
Korean (ko)
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KR850007315A (ko
Inventor
겐지 이나미
마시히꼬 요시모도
사도루 가모도
Original Assignee
미쓰비시전기 주식회사
카다야마히도하지로
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Publication of KR850007315A publication Critical patent/KR850007315A/ko
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Publication of KR900003940B1 publication Critical patent/KR900003940B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019850001644A 1984-04-28 1985-03-14 상보형(相補形) 금속산화막 반도체 직접회로장치 Expired KR900003940B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP59086875A JPS60231356A (ja) 1984-04-28 1984-04-28 相補形金属酸化膜半導体集積回路装置
JP59-86875 1984-04-28
JP86875 1984-04-28

Publications (2)

Publication Number Publication Date
KR850007315A KR850007315A (ko) 1985-12-02
KR900003940B1 true KR900003940B1 (ko) 1990-06-04

Family

ID=13898998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850001644A Expired KR900003940B1 (ko) 1984-04-28 1985-03-14 상보형(相補形) 금속산화막 반도체 직접회로장치

Country Status (4)

Country Link
US (1) US4772930A (enExample)
JP (1) JPS60231356A (enExample)
KR (1) KR900003940B1 (enExample)
GB (1) GB2158640B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS648659A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Supplementary semiconductor integrated circuit device
US4866567A (en) * 1989-01-06 1989-09-12 Ncr Corporation High frequency integrated circuit channel capacitor
US6563730B1 (en) 2002-04-09 2003-05-13 National Semiconductor Corporation Low power static RAM architecture
US6711051B1 (en) 2002-09-05 2004-03-23 National Semiconductor Corporation Static RAM architecture with bit line partitioning

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836598B1 (enExample) * 1969-09-05 1973-11-06
JPS5534582B2 (enExample) * 1974-06-24 1980-09-08
US4006491A (en) * 1975-05-15 1977-02-01 Motorola, Inc. Integrated circuit having internal main supply voltage regulator
GB1558502A (en) * 1975-07-18 1980-01-03 Tokyo Shibaura Electric Co Semiconductor integrated circuit device
GB1559581A (en) * 1975-07-18 1980-01-23 Tokyo Shibaura Electric Co Complementary mosfet device
JPS5234680A (en) * 1975-09-12 1977-03-16 Toshiba Corp Integrated circuit
US4035826A (en) * 1976-02-23 1977-07-12 Rca Corporation Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region
US4100561A (en) * 1976-05-24 1978-07-11 Rca Corp. Protective circuit for MOS devices
US4063274A (en) * 1976-12-10 1977-12-13 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
EP0084000A3 (en) * 1982-01-11 1985-07-10 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Cmos device
JPS58127348A (ja) * 1982-01-25 1983-07-29 Mitsubishi Electric Corp 大規模半導体集積回路装置
JPS60152055A (ja) * 1984-01-20 1985-08-10 Matsushita Electric Ind Co Ltd 相補型ｍｏｓ半導体装置
JPS60231356A (ja) * 1984-04-28 1985-11-16 Mitsubishi Electric Corp 相補形金属酸化膜半導体集積回路装置
JPS6136946A (ja) * 1984-07-30 1986-02-21 Nec Corp 半導体装置

Also Published As

Publication number Publication date
GB2158640B (en) 1988-02-24
GB2158640A (en) 1985-11-13
US4772930A (en) 1988-09-20
GB8510505D0 (en) 1985-05-30
KR850007315A (ko) 1985-12-02
JPH0144023B2 (enExample) 1989-09-25
JPS60231356A (ja) 1985-11-16

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