KR900003612B1 - 반도체 기판상에 텅스텐을 선택적으로 부착시키는 방법 - Google Patents

반도체 기판상에 텅스텐을 선택적으로 부착시키는 방법 Download PDF

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Publication number
KR900003612B1
KR900003612B1 KR1019870002325A KR870002325A KR900003612B1 KR 900003612 B1 KR900003612 B1 KR 900003612B1 KR 1019870002325 A KR1019870002325 A KR 1019870002325A KR 870002325 A KR870002325 A KR 870002325A KR 900003612 B1 KR900003612 B1 KR 900003612B1
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KR
South Korea
Prior art keywords
tungsten
patterned mask
semiconductor substrate
gas
mask film
Prior art date
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Expired
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KR1019870002325A
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English (en)
Korean (ko)
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KR870009450A (ko
Inventor
요시미 시오야
야스시 오야마
노리히사 쓰즈기
마모루 마에다
마사아끼 이씨가와
후미다께 미네오
신이찌 이노우에
야스오 우오오씨
아끼라 다부찌
아쓰히로 쑤꾸네
다꾸야 와다나베
다까유끼 오바
Original Assignee
후지쓰 가부시까가이샤
야마모도 다꾸마
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Publication of KR870009450A publication Critical patent/KR870009450A/ko
Application granted granted Critical
Publication of KR900003612B1 publication Critical patent/KR900003612B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H10W20/057—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by selectively depositing, e.g. by using selective CVD or plating

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1019870002325A 1986-03-17 1987-03-14 반도체 기판상에 텅스텐을 선택적으로 부착시키는 방법 Expired KR900003612B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61058753A JPS62216224A (ja) 1986-03-17 1986-03-17 タングステンの選択成長方法
JP61-58753 1986-03-17
JP58753 1986-03-17

Publications (2)

Publication Number Publication Date
KR870009450A KR870009450A (ko) 1987-10-26
KR900003612B1 true KR900003612B1 (ko) 1990-05-26

Family

ID=13093297

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002325A Expired KR900003612B1 (ko) 1986-03-17 1987-03-14 반도체 기판상에 텅스텐을 선택적으로 부착시키는 방법

Country Status (4)

Country Link
US (1) US4804560A (enExample)
EP (1) EP0238024B1 (enExample)
JP (1) JPS62216224A (enExample)
KR (1) KR900003612B1 (enExample)

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US5112439A (en) * 1988-11-30 1992-05-12 Mcnc Method for selectively depositing material on substrates
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Also Published As

Publication number Publication date
EP0238024A2 (en) 1987-09-23
EP0238024B1 (en) 1993-11-24
KR870009450A (ko) 1987-10-26
US4804560A (en) 1989-02-14
JPS62216224A (ja) 1987-09-22
EP0238024A3 (en) 1990-03-14
JPH0579164B2 (enExample) 1993-11-01

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St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000