KR900000739B1 - 부식제 조성물 - Google Patents

부식제 조성물 Download PDF

Info

Publication number
KR900000739B1
KR900000739B1 KR1019840004691A KR840004691A KR900000739B1 KR 900000739 B1 KR900000739 B1 KR 900000739B1 KR 1019840004691 A KR1019840004691 A KR 1019840004691A KR 840004691 A KR840004691 A KR 840004691A KR 900000739 B1 KR900000739 B1 KR 900000739B1
Authority
KR
South Korea
Prior art keywords
caustic
fluorine
composition
cooh
surfactant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019840004691A
Other languages
English (en)
Korean (ko)
Other versions
KR850001915A (ko
Inventor
나오노리 엔죠오
고오지 다무라
Original Assignee
다이낑 고오교오 가부시기 가이샤
야마다 미노루
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다이낑 고오교오 가부시기 가이샤, 야마다 미노루 filed Critical 다이낑 고오교오 가부시기 가이샤
Publication of KR850001915A publication Critical patent/KR850001915A/ko
Application granted granted Critical
Publication of KR900000739B1 publication Critical patent/KR900000739B1/ko
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Detergent Compositions (AREA)
KR1019840004691A 1983-08-10 1984-08-07 부식제 조성물 Expired KR900000739B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP83-147213 1983-08-10
JP58-147213 1983-08-10
JP58147213A JPS6039176A (ja) 1983-08-10 1983-08-10 エッチング剤組成物

Publications (2)

Publication Number Publication Date
KR850001915A KR850001915A (ko) 1985-04-10
KR900000739B1 true KR900000739B1 (ko) 1990-02-10

Family

ID=15425124

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004691A Expired KR900000739B1 (ko) 1983-08-10 1984-08-07 부식제 조성물

Country Status (5)

Country Link
US (1) US4582624A (https=)
EP (1) EP0133584B1 (https=)
JP (1) JPS6039176A (https=)
KR (1) KR900000739B1 (https=)
DE (1) DE3472421D1 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620934A (en) * 1984-04-26 1986-11-04 Allied Corporation Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
US4761245A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant
US4863563A (en) * 1987-01-27 1989-09-05 Olin Corporation Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
DE68910971T2 (de) * 1988-05-16 1994-03-24 Olin Corp Ätzlösungen mit anionischen sulfatestern von alkylphenol-polyglycidol-ether.
EP0405886B1 (en) * 1989-06-26 1996-11-27 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法
US5258131A (en) * 1990-04-13 1993-11-02 Austen-Chase Industries Inc. Products for treating asbestos
EP0691676B1 (en) * 1993-02-04 1999-05-12 Daikin Industries, Limited Wet-etching composition for semiconductors excellent in wettability
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
WO1994027314A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07216392A (ja) * 1994-01-26 1995-08-15 Daikin Ind Ltd 洗浄剤及び洗浄方法
US5804034A (en) * 1994-03-21 1998-09-08 Texas Instruments Incorporated Method for manufacturing semiconductor device
JP2914555B2 (ja) * 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
TW294831B (https=) * 1995-04-26 1997-01-01 Handotai Energy Kenkyusho Kk
KR0175009B1 (ko) * 1995-07-28 1999-04-01 김광호 식각용액 및 이를 이용한 반도체 장치의 식각방법
US5635022A (en) * 1996-02-06 1997-06-03 Micron Technology, Inc. Silicon oxide removal in semiconductor processing
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
US5753035A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5753031A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5753034A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co. -Conn. Composition and method to remove asbestos
US5741358A (en) * 1996-09-27 1998-04-21 W. R. Grace & Co.-Conn. Corrosion inhibiting composition for treating asbestos containing materials
US5753032A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5753033A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5743841A (en) * 1996-09-27 1998-04-28 W. R. Grace & Co.-Conn. Foam composition for treating asbestos-containing materials and method of using same
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
RU2003112232A (ru) * 2000-09-27 2004-09-20 Асахи Гласс Компани, Лимитед (Jp) Способ получения ацилфторида и соли карбоновой кислоты
US6620743B2 (en) 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
ITMI20020178A1 (it) * 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
KR101117939B1 (ko) * 2003-10-28 2012-02-29 사켐,인코포레이티드 세척액 및 에칭제 및 이의 사용 방법
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
US7319284B2 (en) * 2005-09-02 2008-01-15 Precision Instrument Development Center National Applied Research Laboratories Surface acoustic wave device and method for fabricating the same
US8153019B2 (en) 2007-08-06 2012-04-10 Micron Technology, Inc. Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
HRP20201041T1 (hr) 2012-09-20 2020-10-16 Swissinso Sa Laminirano staklo sa obojenim odrazom i visokom solarnom propusnosti pogodno za solarne energetske sustave
US11745473B2 (en) 2012-09-20 2023-09-05 Kromatix SA Laminated glazing with coloured reflection and high solar transmittance, and solar energy systems employing the same
CN116590020A (zh) 2021-05-20 2023-08-15 斯泰拉化工公司 微细加工处理剂、和微细加工处理方法
US12604771B2 (en) * 2021-10-28 2026-04-14 Adeia Semiconductor Bonding Technologies Inc. Direct bonding methods and structures

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
JPS5884974A (ja) * 1981-11-13 1983-05-21 Daikin Ind Ltd エツチング剤組成物
JPS5887974A (ja) * 1981-11-19 1983-05-25 Taiko Denki Seisakusho:Kk 映像信号抽出方式

Also Published As

Publication number Publication date
JPS6039176A (ja) 1985-02-28
EP0133584A1 (en) 1985-02-27
DE3472421D1 (en) 1988-08-04
EP0133584B1 (en) 1988-06-29
US4582624A (en) 1986-04-15
JPS6219509B2 (https=) 1987-04-28
KR850001915A (ko) 1985-04-10

Similar Documents

Publication Publication Date Title
KR900000739B1 (ko) 부식제 조성물
US4517106A (en) Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
KR960013146B1 (ko) 마이크로 프로세싱용 표면처리 조성물
US7811978B2 (en) Fluorinated sulfonamide surfactants for aqueous cleaning solutions
US5571447A (en) Stripping and cleaning composition
US4620934A (en) Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
JP3630168B2 (ja) エッチング液組成物
US11120994B2 (en) Etching solution, and method of producing semiconductor element
EP0470957A1 (en) ETCHING SOLUTION FOR METAL LAYERS ENGRAVED BY A PHOTORESISTANT.
EP0416126A1 (en) Sulfuric acid composition having low surface tension
KR100607530B1 (ko) 플루오르화 염, 킬레이트제, 및 글리콜 용매를 포함하는선택적 실리콘 산화물 에칭제 제형
JPWO2003081658A1 (ja) エッチング液組成物
JP2003223010A (ja) 剥離剤組成物
WO2010074878A1 (en) Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds
EP0278628A2 (en) Etching solutions containing ammonium fluoride
JPH0433833B2 (https=)
JPH05275407A (ja) 硫酸組成物
JPH11238725A (ja) エッチング組成物
JPS6332867B2 (https=)
JPH0133550B2 (https=)
JP2001040389A (ja) ウエハ洗浄液
JPH06199504A (ja) 低表面張力硫酸組成物
JPH0413430B2 (https=)

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19840807

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19850718

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19840807

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 19890627

Patent event code: PE09021S01D

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

Comment text: Decision on Publication of Application

Patent event code: PG16051S01I

Patent event date: 19900111

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 19900503

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 19900510

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 19900510

End annual number: 3

Start annual number: 1

PR1001 Payment of annual fee

Payment date: 19930210

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 19940201

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 19950203

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 19960209

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 19970206

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 19980206

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 19990204

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20000201

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20010201

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20020130

Start annual number: 13

End annual number: 13

PR1001 Payment of annual fee

Payment date: 20030123

Start annual number: 14

End annual number: 14

FPAY Annual fee payment

Payment date: 20040120

Year of fee payment: 15

PR1001 Payment of annual fee

Payment date: 20040120

Start annual number: 15

End annual number: 15

EXPY Expiration of term
PC1801 Expiration of term