KR850001915A - 부식제(腐蝕劑) 조성물 - Google Patents

부식제(腐蝕劑) 조성물 Download PDF

Info

Publication number
KR850001915A
KR850001915A KR1019840004691A KR840004691A KR850001915A KR 850001915 A KR850001915 A KR 850001915A KR 1019840004691 A KR1019840004691 A KR 1019840004691A KR 840004691 A KR840004691 A KR 840004691A KR 850001915 A KR850001915 A KR 850001915A
Authority
KR
South Korea
Prior art keywords
cooh
solution composition
aqueous solution
composition according
caustic
Prior art date
Application number
KR1019840004691A
Other languages
English (en)
Other versions
KR900000739B1 (ko
Inventor
나오노리(외 1) 엔죠오
Original Assignee
야마다 미노루
다이낑 고오교오 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 야마다 미노루, 다이낑 고오교오 가부시기 가이샤 filed Critical 야마다 미노루
Publication of KR850001915A publication Critical patent/KR850001915A/ko
Application granted granted Critical
Publication of KR900000739B1 publication Critical patent/KR900000739B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means

Abstract

내용 없음

Description

부식제(腐蝕劑) 조성물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 불화수소; 불화암모늄; 과 불소함유카르복시산 및 이들 염으로 구성되는 군으로부터 선정된 계면활성제로 구성되는 부식제 수용액 조성물.
  2. 제1항에 있어서, 불소함유카르복시산이 다음 일반식(Ⅰ)인 부식제 수용액 조성물.
    RfCOOH (Ⅰ)
    상기 일반식(Ⅰ)에서, Rf는 3개 내지 20개탄소원자를 갖는 불소함유 탄화수소기이다.
  3. 제1항에 있어서, 계면활성제의 양이 조성물 중량 기준으로 0.0001 내지 1중량％인 부식제 수용액 조성물.
  4. 제1항에 있어서, 염소―함유 카르복시산염이 다음 일반식(Ⅱ)의 염기와의 염인 부식제 수용액 조성물
    NR1R2R3(Ⅱ)
    상기 일반식(Ⅱ)에서 R1, R2및 R3는 각각 수소, C1내지 C5알킬 또는 하이드록시―C1내지 C5알킬이다.
  5. 제4항에 있어서, 염기가 암모니아인 부식제 수용액 조성물.
  6. 제1항에 있어서, 계면활성제가 CF3(CF2)nCOOH, (CF3)2(CF|2)nCOOH, HCF2(CF2)nCOOH, CF3(CF2)n, ―(CH2)mCOOH, CF3(CF2)nCF＝CH(CH2)mCOOH 및 Cl(CF2CFCl)pCF2COOH(이때 n은 2 내지 17의 정수, m은 1 또는 2이고, 또 p는 1 내지 9의 정수이다)와 이들 화합물과 NH3, (CH3)3N, (C2H5)|2NH, C3H8NH2, NH2CH2CH2OH, NH(CH2CH2OH)2및 N(CH2CH2OH)3와의 염으로 구성되는 군으로 부터 선정된 부식제 수용액 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840004691A 1983-08-10 1984-08-07 부식제 조성물 KR900000739B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP58-147213 1983-08-10
JP83-147213 1983-08-10
JP58147213A JPS6039176A (ja) 1983-08-10 1983-08-10 エッチング剤組成物

Publications (2)

Publication Number Publication Date
KR850001915A true KR850001915A (ko) 1985-04-10
KR900000739B1 KR900000739B1 (ko) 1990-02-10

Family

ID=15425124

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840004691A KR900000739B1 (ko) 1983-08-10 1984-08-07 부식제 조성물

Country Status (5)

Country Link
US (1) US4582624A (ko)
EP (1) EP0133584B1 (ko)
JP (1) JPS6039176A (ko)
KR (1) KR900000739B1 (ko)
DE (1) DE3472421D1 (ko)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4517106A (en) * 1984-04-26 1985-05-14 Allied Corporation Soluble surfactant additives for ammonium fluoride/hydrofluoric acid oxide etchant solutions
US4620934A (en) * 1984-04-26 1986-11-04 Allied Corporation Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4
US4863563A (en) * 1987-01-27 1989-09-05 Olin Corporation Etching solutions containing ammonium fluoride and a nonionic alkyl amine glycidol adduct and method of etching
US4761245A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkylphenol polyglycidol ether surfactant
US4761244A (en) * 1987-01-27 1988-08-02 Olin Corporation Etching solutions containing ammonium fluoride and an alkyl polyaccharide surfactant
JP2617593B2 (ja) * 1988-05-16 1997-06-04 オリン コーポレイション フッ化アンモニウム及びアルキルフェノールポリグリシドール エーテルの陰イオン性硫酸エステルを含有する食刻溶液
EP0405886B1 (en) * 1989-06-26 1996-11-27 Hashimoto Chemical Industries Co., Ltd. Surface treatment agent for fine surface treatment
JPH0353083A (ja) * 1989-07-20 1991-03-07 Morita Kagaku Kogyo Kk 半導体素子の金属汚染を防止する方法
US5258131A (en) * 1990-04-13 1993-11-02 Austen-Chase Industries Inc. Products for treating asbestos
JP3309392B2 (ja) * 1993-02-04 2002-07-29 ダイキン工業株式会社 濡れ性に優れた半導体用ウエットエッチング組成物
US5320709A (en) * 1993-02-24 1994-06-14 Advanced Chemical Systems International Incorporated Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
WO1994027314A1 (en) * 1993-05-13 1994-11-24 Interuniversitair Microelektronica Centrum Method for semiconductor processing using mixtures of hf and carboxylic acid
JPH07216392A (ja) * 1994-01-26 1995-08-15 Daikin Ind Ltd 洗浄剤及び洗浄方法
US5804034A (en) * 1994-03-21 1998-09-08 Texas Instruments Incorporated Method for manufacturing semiconductor device
JP2914555B2 (ja) * 1994-08-30 1999-07-05 信越半導体株式会社 半導体シリコンウェーハの洗浄方法
TW294831B (ko) * 1995-04-26 1997-01-01 Handotai Energy Kenkyusho Kk
KR0175009B1 (ko) * 1995-07-28 1999-04-01 김광호 식각용액 및 이를 이용한 반도체 장치의 식각방법
US5635022A (en) * 1996-02-06 1997-06-03 Micron Technology, Inc. Silicon oxide removal in semiconductor processing
JP3188843B2 (ja) * 1996-08-28 2001-07-16 ステラケミファ株式会社 微細加工表面処理剤及び微細加工表面処理方法
US5753031A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5741358A (en) * 1996-09-27 1998-04-21 W. R. Grace & Co.-Conn. Corrosion inhibiting composition for treating asbestos containing materials
US5753032A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5753035A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5753034A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co. -Conn. Composition and method to remove asbestos
US5753033A (en) * 1996-09-27 1998-05-19 W. R. Grace & Co.-Conn. Composition and method to remove asbestos
US5743841A (en) * 1996-09-27 1998-04-28 W. R. Grace & Co.-Conn. Foam composition for treating asbestos-containing materials and method of using same
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
KR100238234B1 (ko) * 1997-03-20 2000-01-15 윤종용 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법
DE19805525C2 (de) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Verfahren zum Naßätzen von Halbleiterscheiben zum Erzeugen eines definierten Randbereichs durch Unterätzen
US6310018B1 (en) * 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
JPWO2002026686A1 (ja) * 2000-09-27 2004-02-05 旭硝子株式会社 アシルフルオリド類およびカルボン酸塩類の製造方法
US6620743B2 (en) 2001-03-26 2003-09-16 Asm America, Inc. Stable, oxide-free silicon surface preparation
ITMI20020178A1 (it) * 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati
US6849200B2 (en) * 2002-07-23 2005-02-01 Advanced Technology Materials, Inc. Composition and process for wet stripping removal of sacrificial anti-reflective material
US7169323B2 (en) * 2002-11-08 2007-01-30 3M Innovative Properties Company Fluorinated surfactants for buffered acid etch solutions
US6890452B2 (en) * 2002-11-08 2005-05-10 3M Innovative Properties Company Fluorinated surfactants for aqueous acid etch solutions
CA2544209C (en) * 2003-10-28 2011-10-18 Sachem, Inc. Cleaning solutions and etchants and methods for using same
US7479460B2 (en) * 2005-08-23 2009-01-20 Asm America, Inc. Silicon surface preparation
US7319284B2 (en) * 2005-09-02 2008-01-15 Precision Instrument Development Center National Applied Research Laboratories Surface acoustic wave device and method for fabricating the same
US8153019B2 (en) 2007-08-06 2012-04-10 Micron Technology, Inc. Methods for substantially equalizing rates at which material is removed over an area of a structure or film that includes recesses or crevices
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
EP2897795B9 (en) 2012-09-20 2020-10-28 Swissinso SA Laminated glazing with coloured reflection and high solar transmittance suitable for solar energy systems
US11745473B2 (en) 2012-09-20 2023-09-05 Kromatix SA Laminated glazing with coloured reflection and high solar transmittance, and solar energy systems employing the same
CN116590020A (zh) 2021-05-20 2023-08-15 斯泰拉化工公司 微细加工处理剂、和微细加工处理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4055458A (en) * 1975-08-07 1977-10-25 Bayer Aktiengesellschaft Etching glass with HF and fluorine-containing surfactant
JPS5884974A (ja) * 1981-11-13 1983-05-21 Daikin Ind Ltd エツチング剤組成物
JPS5887974A (ja) * 1981-11-19 1983-05-25 Taiko Denki Seisakusho:Kk 映像信号抽出方式

Also Published As

Publication number Publication date
EP0133584A1 (en) 1985-02-27
US4582624A (en) 1986-04-15
DE3472421D1 (en) 1988-08-04
EP0133584B1 (en) 1988-06-29
JPS6219509B2 (ko) 1987-04-28
JPS6039176A (ja) 1985-02-28
KR900000739B1 (ko) 1990-02-10

Similar Documents

Publication Publication Date Title
KR850001915A (ko) 부식제(腐蝕劑) 조성물
KR890000649A (ko) 알칼리 세정제용 첨가제 및 이를 함유하는 조성물
KR920008018A (ko) 피페라진 유도체의 제조방법
ES437541A1 (es) Procedimiento para la obtencion de composiciones formadoras de espuma.
KR830006380A (ko) 발포체 제조용의 열가소성 수지 조성물
KR850002459A (ko) 디히드록시벤즈아미드 유도체 및 그 제조방법
GB1305718A (ko)
KR850001724A (ko) 4-페닐-4-옥소-부텐-2-오인산유도체의 제조방법
GB1511340A (en) Thiophen saccharins
KR860001048A (ko) 플루오로알릴아민 유도체의 제조방법
KR920700279A (ko) 저 표면장력 황산 조성물
KR860003239A (ko) 퀴놀론 카복실산 유도체의 제조방법
DE3676024D1 (de) Alkylethersulfate enthaltende wasch- und reinigungsmittel.
KR830007484A (ko) 신규 신나모일-신나민산 유도체의 제조방법
KR830005191A (ko) 푸란유도체의 제조방법
KR860001797A (ko) 6-메틸-3,4-디하이드로-1,2,3-옥사티아진-4-은 2,2-디옥사이드의 제조방법
KR960701001A (ko) 디아조메탄 유도체의 제조 방법(Process for Producing Diazomethane Derivative)
KR880000372A (ko) 4-페닐-4-옥소-2-부테노산 유도체의 제조방법
KR850001308A (ko) 금속 세척 조성물
KR890011830A (ko) 2-옥시이미노 -3- 옥소부티르산의 제조방법
KR920007978A (ko) 살리실산 유도체의 제조방법
KR850002456A (ko) 항말라리아성의 펜안트렌메탄올 화합물들의 염들
KR840001580A (ko) 6'-(2-아미노-2-〔4-아실욕시페닐〕아세트아미도페니실라노 일옥시메틸 페니실라네이트 1,1-디옥사이드 화합물의 제조방법
KR830002718A (ko) 피라졸 유도체의 제조법
KR920007988A (ko) 4, 4'-디아미노스틸벤-2, 2'-디술폰산의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040120

Year of fee payment: 15

EXPY Expiration of term