KR890013931A - 이미지 센서의 스미어 노이즈 억제장치 및 그의 제조방법 - Google Patents
이미지 센서의 스미어 노이즈 억제장치 및 그의 제조방법 Download PDFInfo
- Publication number
- KR890013931A KR890013931A KR1019880001578A KR880001578A KR890013931A KR 890013931 A KR890013931 A KR 890013931A KR 1019880001578 A KR1019880001578 A KR 1019880001578A KR 880001578 A KR880001578 A KR 880001578A KR 890013931 A KR890013931 A KR 890013931A
- Authority
- KR
- South Korea
- Prior art keywords
- image sensor
- forming
- manufacturing
- polysilicon
- convex lens
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 230000001629 suppression Effects 0.000 title claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 229920005591 polysilicon Polymers 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명 이미지 센서의 단면도이다.
Claims (3)
- 실리콘 기판위에 포토다이오드(D)와 매설채널(E)이 형성되고 수광부가 오픈된 폴리실리콘(J)과 메탈(L)이 차례로 형성되며 그 위에 컬러필터(M)가 형성되는 이미지 센서에 있어서, 폴리실리콘(J)위에 폴리사이드(I)를 형성하고 컬러필터(M)의 수광부를 볼록렌즈(N)로 형성하여서 된 이미지 센서의 스미어 노이즈 억제장치.
- 이미지 센서의 제조방법에 있어서, 실리콘 기판(A)상에 포토다이오드(D)와 매설채널(E)과 폴리실리콘(J)을 형성하는 통상의 공정이후, 폴리실리콘(J)위에 Ti 또는 W을 증착하여 폴리사이드(I)를 형성한후 수광부를 한정식각하는 공정과, 여기에 패시베이션(K)을 형성하고 메탈(L)을 증착한후 수광부를 한정식각하는 공정과, 여기에 컬리펄터(M)를 도포하고 포토레지스터를 수광부의 패턴을 형성한후 이방성 식각방법으로 볼록렌즈(N)를 형성하는 공정과로 됨을 특징으로 하는 이미지 센서의 스미어 노이즈 억제장치의 제조방법.
- 제2항에 있어서, 볼록렌즈(N)의 촛점이 실리콘 기판(A)의 표면으로 되도록 볼록렌즈(N)가 형성됨을 특징으로 하는 이미지 센서의 스미어 노이즈 억제장치의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880001578A KR910003497B1 (ko) | 1988-02-15 | 1988-02-15 | 이미지 센서의 스미어 노이즈 억제장치 및 그의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880001578A KR910003497B1 (ko) | 1988-02-15 | 1988-02-15 | 이미지 센서의 스미어 노이즈 억제장치 및 그의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890013931A true KR890013931A (ko) | 1989-09-26 |
| KR910003497B1 KR910003497B1 (ko) | 1991-06-01 |
Family
ID=19272262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880001578A KR910003497B1 (ko) | 1988-02-15 | 1988-02-15 | 이미지 센서의 스미어 노이즈 억제장치 및 그의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR910003497B1 (ko) |
-
1988
- 1988-02-15 KR KR1019880001578A patent/KR910003497B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR910003497B1 (ko) | 1991-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050506 Year of fee payment: 15 |
|
| LAPS | Lapse due to unpaid annual fee |