KR930009375A - 고체촬상장치 및 그 제조방법 - Google Patents

고체촬상장치 및 그 제조방법 Download PDF

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Publication number
KR930009375A
KR930009375A KR1019920020012A KR920020012A KR930009375A KR 930009375 A KR930009375 A KR 930009375A KR 1019920020012 A KR1019920020012 A KR 1019920020012A KR 920020012 A KR920020012 A KR 920020012A KR 930009375 A KR930009375 A KR 930009375A
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South Korea
Prior art keywords
color filter
layer
material layer
imaging device
forming
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KR1019920020012A
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English (en)
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KR960016178B1 (ko
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토오루 노무라
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단죠 카즈마
마쯔시다덴시고오교오 가부시기가이샤
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Publication of KR930009375A publication Critical patent/KR930009375A/ko
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Publication of KR960016178B1 publication Critical patent/KR960016178B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명에 관한 고체촬상장치는, 목적으로 하는 분광투과율 특성을 가진 착색투명재료에 의해 형성한 컬러필터를 구비하는 것이다. 그 컬러필터는 동일층 내에서 복수의 분광투과율 특성을 가지고 있다. 이 구조에 의해서, 컬러필터로부터 수광부까지의 거리가 크게 되지 않고, 플리커 등의 화상특성불량은 해소된다. 또 적층구조는 아니기 때문에, 열적충격에 의한 컬러필터에의 균열의 발생도 없어지고, 신뢰성이 향상한다.
또 제조방법에 있어서는, 착색투명재료에 대해서 드라이에 칭하므로서, 컬러필터를 구비한 고체촬상장치를 실현하고 있다. 이에 의해서 패턴형성에 수반하는 노광이나 현상 그리고 염색공정 없이 컬러필터의 형성이 가능하며, 효율이 좋은 제조방법을 실현하는 것을 특징으로 한다.

Description

고체촬상장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제 1의 실시예에 있어서의 고체촬상장치의 구조를 표시한 부분확대 단면도,
제2도는 본 발명의 제 2의 실시예에 있어서의 고체촬상장치의 제조방법의 제1 공정을 표시한 부분확대 단면도,
제3도는 본 발명의 제 2의 실시예에 있어서의 고체촬상장치의 제조방법의 제2 공정을 표시한 부분확대 단면도.

Claims (5)

  1. 고체촬상장치기판 위에, 부분적으로 상위한 분광투과율 특성을 가진 단층의 컬러필터층과, 상기 단층의 컬러필터층 위에 형성된 표면이 평탄한 내에칭성재료층과, 상기 내에칭성재료층 위에 형성된 마이크로렌즈를 가진 것을 특징으로 하는 고체촬상장치.
  2. 제1항에 있어서, 단층의 컬러필터층이 유기계고분자착색투명재료로 이루어진 것을 특징으로 하는 고체촬상장치.
  3. 고체촬상장치기판 위에 착색투명재료층을 형성하는 공정과, 상기 착색투명재료층 위에 내에칭성재료층을 선택적으로 형성하는 공정과, 상기 내에칭성재료층을 마스크로 해서 상기 착색재료층을 에칭해서 컬러필터를 형성하는 공정과, 상기 내에칭성재료층 위에 마이크로렌즈를 형성하는 공정을 가진 것을 특징으로 하는 고체촬상장치의 제조방법.
  4. 제3항에 있어서, 컬러필터를 형성하는 공정이 착색투명재료층을 형성하는 공정과, 상기 착색투명재료층 위에 내에칭성재료층을 선택적으로 형성하는 공정과, 상기 내에칭성재료층을 마스크로 해서 상기 착색재료층을 에칭하는 공정을, 상기 착색투명재료의 분광투과율 특성을 바꾸어서 복수회 반복하여, 부분적으로 상위한 분광투과율 특성을 가진 단층의 컬러필터를 형성하는 공정인 것을 특징으로 하는 고체촬상장치의 제조방법.
  5. 제3항 또는 제 4항에 있어서, 착색투명재료층을 형성하는 공정이 유기계고분자착색투명재료층을 형성하는 공정인 것을 특징으로 하는 고체촬상장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020012A 1991-10-31 1992-10-29 고체촬상장치 및 그 제조방법 KR960016178B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP28591291 1991-10-31
JP91-285912 1991-10-31

Publications (2)

Publication Number Publication Date
KR930009375A true KR930009375A (ko) 1993-05-22
KR960016178B1 KR960016178B1 (ko) 1996-12-04

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US (2) US5321249A (ko)
EP (1) EP0539658B1 (ko)
KR (1) KR960016178B1 (ko)
DE (1) DE69224788T2 (ko)

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Also Published As

Publication number Publication date
EP0539658A1 (en) 1993-05-05
DE69224788T2 (de) 1998-07-09
US5336367A (en) 1994-08-09
US5321249A (en) 1994-06-14
DE69224788D1 (de) 1998-04-23
EP0539658B1 (en) 1998-03-18
KR960016178B1 (ko) 1996-12-04

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