KR930009375A - 고체촬상장치 및 그 제조방법 - Google Patents

고체촬상장치 및 그 제조방법 Download PDF

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Publication number
KR930009375A
KR930009375A KR1019920020012A KR920020012A KR930009375A KR 930009375 A KR930009375 A KR 930009375A KR 1019920020012 A KR1019920020012 A KR 1019920020012A KR 920020012 A KR920020012 A KR 920020012A KR 930009375 A KR930009375 A KR 930009375A
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South Korea
Prior art keywords
color filter
layer
material layer
imaging device
forming
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KR1019920020012A
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English (en)
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KR960016178B1 (ko
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토오루 노무라
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단죠 카즈마
마쯔시다덴시고오교오 가부시기가이샤
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Publication of KR930009375A publication Critical patent/KR930009375A/ko
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Publication of KR960016178B1 publication Critical patent/KR960016178B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명에 관한 고체촬상장치는, 목적으로 하는 분광투과율 특성을 가진 착색투명재료에 의해 형성한 컬러필터를 구비하는 것이다. 그 컬러필터는 동일층 내에서 복수의 분광투과율 특성을 가지고 있다. 이 구조에 의해서, 컬러필터로부터 수광부까지의 거리가 크게 되지 않고, 플리커 등의 화상특성불량은 해소된다. 또 적층구조는 아니기 때문에, 열적충격에 의한 컬러필터에의 균열의 발생도 없어지고, 신뢰성이 향상한다.
또 제조방법에 있어서는, 착색투명재료에 대해서 드라이에 칭하므로서, 컬러필터를 구비한 고체촬상장치를 실현하고 있다. 이에 의해서 패턴형성에 수반하는 노광이나 현상 그리고 염색공정 없이 컬러필터의 형성이 가능하며, 효율이 좋은 제조방법을 실현하는 것을 특징으로 한다.

Description

고체촬상장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제 1의 실시예에 있어서의 고체촬상장치의 구조를 표시한 부분확대 단면도,
제2도는 본 발명의 제 2의 실시예에 있어서의 고체촬상장치의 제조방법의 제1 공정을 표시한 부분확대 단면도,
제3도는 본 발명의 제 2의 실시예에 있어서의 고체촬상장치의 제조방법의 제2 공정을 표시한 부분확대 단면도.

Claims (5)

  1. 고체촬상장치기판 위에, 부분적으로 상위한 분광투과율 특성을 가진 단층의 컬러필터층과, 상기 단층의 컬러필터층 위에 형성된 표면이 평탄한 내에칭성재료층과, 상기 내에칭성재료층 위에 형성된 마이크로렌즈를 가진 것을 특징으로 하는 고체촬상장치.
  2. 제1항에 있어서, 단층의 컬러필터층이 유기계고분자착색투명재료로 이루어진 것을 특징으로 하는 고체촬상장치.
  3. 고체촬상장치기판 위에 착색투명재료층을 형성하는 공정과, 상기 착색투명재료층 위에 내에칭성재료층을 선택적으로 형성하는 공정과, 상기 내에칭성재료층을 마스크로 해서 상기 착색재료층을 에칭해서 컬러필터를 형성하는 공정과, 상기 내에칭성재료층 위에 마이크로렌즈를 형성하는 공정을 가진 것을 특징으로 하는 고체촬상장치의 제조방법.
  4. 제3항에 있어서, 컬러필터를 형성하는 공정이 착색투명재료층을 형성하는 공정과, 상기 착색투명재료층 위에 내에칭성재료층을 선택적으로 형성하는 공정과, 상기 내에칭성재료층을 마스크로 해서 상기 착색재료층을 에칭하는 공정을, 상기 착색투명재료의 분광투과율 특성을 바꾸어서 복수회 반복하여, 부분적으로 상위한 분광투과율 특성을 가진 단층의 컬러필터를 형성하는 공정인 것을 특징으로 하는 고체촬상장치의 제조방법.
  5. 제3항 또는 제 4항에 있어서, 착색투명재료층을 형성하는 공정이 유기계고분자착색투명재료층을 형성하는 공정인 것을 특징으로 하는 고체촬상장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020012A 1991-10-31 1992-10-29 고체촬상장치 및 그 제조방법 KR960016178B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-285912 1991-10-31
JP28591291 1991-10-31

Publications (2)

Publication Number Publication Date
KR930009375A true KR930009375A (ko) 1993-05-22
KR960016178B1 KR960016178B1 (ko) 1996-12-04

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US (2) US5321249A (ko)
EP (1) EP0539658B1 (ko)
KR (1) KR960016178B1 (ko)
DE (1) DE69224788T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100934513B1 (ko) * 2005-02-10 2009-12-29 도판 인사츠 가부시키가이샤 고체 촬상 소자 및 그 제조 방법

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3067435B2 (ja) * 1992-12-24 2000-07-17 キヤノン株式会社 画像読取用光電変換装置及び該装置を有する画像処理装置
DE69409655T2 (de) * 1993-09-17 1998-08-06 Polaroid Corp Herstellung von mikrolinsen auf festkörper-bildaufnehmer
US5708264A (en) * 1995-11-07 1998-01-13 Eastman Kodak Company Planar color filter array for CCDs from dyed and mordant layers
US5677202A (en) * 1995-11-20 1997-10-14 Eastman Kodak Company Method for making planar color filter array for image sensors with embedded color filter arrays
US6211916B1 (en) * 1996-03-11 2001-04-03 Eastman Kodak Company Solid state imager with inorganic lens array
US5711890A (en) * 1996-03-11 1998-01-27 Eastman Kodak Company Method for forming cylindrical lens arrays for solid state imager
US5824236A (en) * 1996-03-11 1998-10-20 Eastman Kodak Company Method for forming inorganic lens array for solid state imager
US5734190A (en) * 1996-03-11 1998-03-31 Eastman Kodak Company Imager having a plurality of cylindrical lenses
US5756239A (en) * 1996-12-12 1998-05-26 Eastman Kodak Company Method of forming a color filter array with improved resolution
TW370727B (en) * 1998-06-04 1999-09-21 United Microelectronics Corp Method for removing color filter films of CMOS sensor
TW400657B (en) * 1998-06-09 2000-08-01 United Microelectronics Corp The manufacture method of CMOS sensor device
US6297071B1 (en) 1998-07-22 2001-10-02 Eastman Kodak Company Method of making planar image sensor color filter arrays
US6495813B1 (en) 1999-10-12 2002-12-17 Taiwan Semiconductor Manufacturing Company Multi-microlens design for semiconductor imaging devices to increase light collection efficiency in the color filter process
KR100382723B1 (ko) * 2000-11-13 2003-05-09 삼성전자주식회사 고체촬상소자 및 그 제조방법
US20020084407A1 (en) * 2000-12-28 2002-07-04 Xerox Corporation Systems and methods for fabricating an electro-optical device used for image sensing
TW540157B (en) * 2001-05-31 2003-07-01 Konishiroku Photo Ind CMOS image sensor
FR2829876B1 (fr) * 2001-09-18 2004-07-02 St Microelectronics Sa Cellule photosensible incorporant un guide de lumiere et matrice composee de telles cellules
US6861280B2 (en) * 2002-10-25 2005-03-01 Omnivision International Holding Ltd Image sensor having micro-lenses with integrated color filter and method of making
KR100560309B1 (ko) * 2003-12-31 2006-03-14 동부아남반도체 주식회사 씨모스 이미지 센서 및 그 광 칼라 감도 감지 방법
JP4882224B2 (ja) * 2004-11-26 2012-02-22 ソニー株式会社 固体撮像装置の製造方法
KR101304263B1 (ko) * 2005-06-03 2013-09-05 후지필름 가부시키가이샤 안료함유 열경화성 조성물, 및, 컬러필터, 화상기록재료,및, 컬러필터의 제조방법
US7799491B2 (en) * 2006-04-07 2010-09-21 Aptina Imaging Corp. Color filter array and imaging device containing such color filter array and method of fabrication
KR100823031B1 (ko) * 2006-12-21 2008-04-17 동부일렉트로닉스 주식회사 이미지 센서 제조방법
JP2008241744A (ja) * 2007-03-23 2008-10-09 Fujifilm Corp カラーフィルタの製造方法
US9570491B2 (en) 2014-10-08 2017-02-14 Omnivision Technologies, Inc. Dual-mode image sensor with a signal-separating color filter array, and method for same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4236098A (en) * 1979-08-20 1980-11-25 Eastman Kodak Company Solid-state color imaging devices
US4357415A (en) * 1980-03-06 1982-11-02 Eastman Kodak Company Method of making a solid-state color imaging device having a color filter array using a photocrosslinkable barrier
US4416961A (en) * 1980-09-11 1983-11-22 Eastman Kodak Company Color imaging devices and color filter arrays using photo-bleachable dyes
JPS58219748A (ja) * 1982-06-15 1983-12-21 Toshiba Corp 半導体装置
US4827118A (en) * 1986-07-10 1989-05-02 Minolta Camera Kabushiki Kaisha Light-sensitive device having color filter and manufacturing method thereof
JPS63204486A (ja) * 1987-02-20 1988-08-24 Mitsubishi Electric Corp 文字入力装置
JPS63250316A (ja) * 1987-04-07 1988-10-18 Nitto Koryo Kk 浴用剤
JPS63290802A (ja) * 1987-05-25 1988-11-28 Dai Ichi Kogyo Seiyaku Co Ltd 水系水中防汚剤
JPS63304675A (ja) * 1987-06-04 1988-12-12 Mitsubishi Electric Corp 半導体素子装置
JPH0296372A (ja) * 1988-09-30 1990-04-09 Fujitsu Ltd カラー固体撮像素子の製造方法
US5124543A (en) * 1989-08-09 1992-06-23 Ricoh Company, Ltd. Light emitting element, image sensor and light receiving element with linearly varying waveguide index
US5239412A (en) * 1990-02-05 1993-08-24 Sharp Kabushiki Kaisha Solid image pickup device having microlenses
JPH0485960A (ja) * 1990-07-30 1992-03-18 Toshiba Corp 固体撮像装置及びその製造方法
JPH05167054A (ja) * 1991-12-19 1993-07-02 Toshiba Corp 固体撮像装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100934513B1 (ko) * 2005-02-10 2009-12-29 도판 인사츠 가부시키가이샤 고체 촬상 소자 및 그 제조 방법

Also Published As

Publication number Publication date
KR960016178B1 (ko) 1996-12-04
EP0539658B1 (en) 1998-03-18
US5336367A (en) 1994-08-09
DE69224788D1 (de) 1998-04-23
EP0539658A1 (en) 1993-05-05
US5321249A (en) 1994-06-14
DE69224788T2 (de) 1998-07-09

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