KR830006826A - 컬러고체촬상소자(固體撮像素子)의 제조방법 - Google Patents

컬러고체촬상소자(固體撮像素子)의 제조방법 Download PDF

Info

Publication number
KR830006826A
KR830006826A KR1019810001644A KR810001644A KR830006826A KR 830006826 A KR830006826 A KR 830006826A KR 1019810001644 A KR1019810001644 A KR 1019810001644A KR 810001644 A KR810001644 A KR 810001644A KR 830006826 A KR830006826 A KR 830006826A
Authority
KR
South Korea
Prior art keywords
color
manufacturing
filter
pickup device
image pickup
Prior art date
Application number
KR1019810001644A
Other languages
English (en)
Other versions
KR840002299B1 (ko
Inventor
노리오 고이께
아끼라 사사노
요시오 다니구찌
도시오 나까노
아사가즈 아오끼
이와오 다께모도
Original Assignee
요시야마 히로요시
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 요시야마 히로요시, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 요시야마 히로요시
Publication of KR830006826A publication Critical patent/KR830006826A/ko
Application granted granted Critical
Publication of KR840002299B1 publication Critical patent/KR840002299B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Optical Filters (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음

Description

컬러고체촬상소자(固體撮像素子)의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명의 설명을 위해서 기재한 고체촬상소자용LSI 및 그 위에 적층된 컬러필터의 구조를 나타낸 개략도.

Claims (4)

  1. 도면에 표시하고 본문에 상술한 바와같이 동일반도체 기판상에 광전변환소자 및 이 소자를 선택하는 주사소자로 이루어진 회소(繪素)를 매트릭스상으로 다수 집적하고, 또한 이 회소의 상부에 도트상컬러필터를 적층한 컬러고체촬상소자의 제조방법에 있어서, 이 컬러필터의 제작에 사용되는 포토에칭용마스크상에 매트릭스상으로 배열된 필터패터언이, 회소치수보다 축소되어서 설치된 마스크를 사용하여, 상기 컬러필터를 가공형성하는 것을 특징으로 하는 컬러고체촬상소자의 제조방법.
  2. 상기 마스크상의 필터패터언의 치수가 컬러필터를 구성하는 각 색깔에 의해서 다른 복수의 상기 마스크를 사용하여 컬러필터를 가공형성하는 것을 특징으로 하는 특허청구의 범위 1기재의 컬러고체촬상소자의 제조방법.
  3. 두꺼운 막두께를 요하는 색깔의 컬러필터일수록 마스크상의 필터패터언이 회소치수에 비해 축소되어 있는 것을 특징으로하는 특허청구의 범위 2기재의 컬러고체촬상소자의 제조방법.
  4. 배열수가 많은 색깔의 컬러필터일수록 마스크상의 필터패터언의 회소치수에 미해서 축소되어 있는 것을 특징으로 하는 특허청구의 범위 2기재의 컬러고체 촬상소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019810001644A 1980-05-26 1981-05-13 컬러고체촬상소자(固體撮像素子)의 제조방법 KR840002299B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6896880A JPS56165362A (en) 1980-05-26 1980-05-26 Manufacture of solid state color image pickup element
JP80-68968 1980-05-26
JP68968 1980-05-26

Publications (2)

Publication Number Publication Date
KR830006826A true KR830006826A (ko) 1983-10-06
KR840002299B1 KR840002299B1 (ko) 1984-12-15

Family

ID=13388974

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019810001644A KR840002299B1 (ko) 1980-05-26 1981-05-13 컬러고체촬상소자(固體撮像素子)의 제조방법

Country Status (6)

Country Link
US (1) US4387987A (ko)
EP (1) EP0040984B1 (ko)
JP (1) JPS56165362A (ko)
KR (1) KR840002299B1 (ko)
CA (1) CA1150419A (ko)
DE (1) DE3172882D1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS574680A (en) * 1980-06-11 1982-01-11 Matsushita Electric Ind Co Ltd Color solid-state pickup device
JPH0697790B2 (ja) * 1982-06-14 1994-11-30 株式会社日立製作所 固体撮像装置
JPS5977776A (ja) * 1982-10-25 1984-05-04 Mitsubishi Electric Corp 固体撮像素子
JPS6033506A (ja) * 1983-08-04 1985-02-20 Seiko Instr & Electronics Ltd カラ−固体撮像素子の製造方法
JPS6063502A (ja) * 1984-06-06 1985-04-11 Hitachi Ltd カラ−固体撮像素子の製造方法
JPS6152061A (ja) * 1984-08-22 1986-03-14 Toshiba Corp 密着型カラ−イメ−ジセンサ
JPS6170502A (ja) * 1984-09-14 1986-04-11 Matsushita Electronics Corp 色分離用フイルタ
JPH07117607B2 (ja) * 1986-05-08 1995-12-18 松下電子工業株式会社 カラ−固体撮像装置
KR920005444B1 (ko) * 1989-12-02 1992-07-04 삼성전자 주식회사 칼라필터 및 그 제조방법
JP4811358B2 (ja) * 2007-06-14 2011-11-09 ソニー株式会社 撮像装置
JP2016134587A (ja) * 2015-01-22 2016-07-25 ソニー株式会社 固体撮像装置、及び、電子機器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864818A (en) * 1969-05-06 1975-02-11 Philips Corp Method of making a target for a camera tube with a mosaic of regions forming rectifying junctions
JPS5941351B2 (ja) * 1976-09-13 1984-10-06 株式会社日立製作所 カラ−用固体撮像素子
US4081277A (en) * 1976-10-08 1978-03-28 Eastman Kodak Company Method for making a solid-state color imaging device having an integral color filter and the device
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
JPS6046401B2 (ja) * 1979-02-26 1985-10-16 株式会社日立製作所 固体撮像素子の製造方法
US4325169A (en) * 1979-10-11 1982-04-20 Texas Instruments Incorporated Method of making CMOS device allowing three-level interconnects
US4287661A (en) * 1980-03-26 1981-09-08 International Business Machines Corporation Method for making an improved polysilicon conductor structure utilizing reactive-ion etching and thermal oxidation

Also Published As

Publication number Publication date
EP0040984B1 (en) 1985-11-13
EP0040984A1 (en) 1981-12-02
DE3172882D1 (en) 1985-12-19
US4387987A (en) 1983-06-14
KR840002299B1 (ko) 1984-12-15
JPS56165362A (en) 1981-12-18
CA1150419A (en) 1983-07-19

Similar Documents

Publication Publication Date Title
DE60131215T2 (de) Bildsensorpixellayout zur reduzierung von feststehenden störstrukturen
EP0124025A2 (en) Solid-state color imaging device and process for fabricating the same
KR830006826A (ko) 컬러고체촬상소자(固體撮像素子)의 제조방법
KR930009375A (ko) 고체촬상장치 및 그 제조방법
JPS60123059A (ja) 密着型カラ−イメ−ジセンサ
KR920013734A (ko) 칼라필터의 제조방법
KR880013263A (ko) 컬러고체촬상장치 및 그 제조방법
KR910009099A (ko) 컬러고체촬상장치
US20070161141A1 (en) Shielding Layer outside the Pixel Regions of Optical Device and Method for Making the Same
JPH11354763A (ja) 固体撮像装置およびカラーフィルタアレイの製造方法
KR850005166A (ko) 반도체 장치와 이의 제조방법
JP2007287977A (ja) 固体撮像素子の製造方法、固体撮像素子
JPS6086504A (ja) カラ−固体撮像装置の製造方法
JP2702709B2 (ja) 光半導体装置の製造方法
KR960019443A (ko) 고체촬상장치 및 그 제조방법
JPS58114039A (ja) スクリ−ンマスク製版方法
JPH05190791A (ja) 半導体装置
KR830005724A (ko) 고체촬상소자의 제조방법
Elabd Method of making a semiconductor device
JPH01158770A (ja) カラーイメージセンサの製造方法
JPH10209420A (ja) 固体撮像素子の製造方法
DE2517346C3 (de) Photoempfänger-Matrix
JPS58223971A (ja) 固体撮像素子
JPH04171863A (ja) 色分解フィルタの形成方法
JPH01137201A (ja) カラー固体撮像素子の製造方法