KR890005156B1 - 반도체 기억장치 - Google Patents
반도체 기억장치 Download PDFInfo
- Publication number
- KR890005156B1 KR890005156B1 KR1019840000580A KR840000580A KR890005156B1 KR 890005156 B1 KR890005156 B1 KR 890005156B1 KR 1019840000580 A KR1019840000580 A KR 1019840000580A KR 840000580 A KR840000580 A KR 840000580A KR 890005156 B1 KR890005156 B1 KR 890005156B1
- Authority
- KR
- South Korea
- Prior art keywords
- memory cell
- cell block
- blocks
- circuit
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/835—Masking faults in memories by using spares or by reconfiguring using programmable devices with roll call arrangements for redundant substitutions
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Landscapes
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58-018027 | 1983-02-08 | ||
| JP58018027A JPS59144098A (ja) | 1983-02-08 | 1983-02-08 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR840008073A KR840008073A (ko) | 1984-12-12 |
| KR890005156B1 true KR890005156B1 (ko) | 1989-12-14 |
Family
ID=11960179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019840000580A Expired KR890005156B1 (ko) | 1983-02-08 | 1984-02-08 | 반도체 기억장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4604730A (enExample) |
| EP (1) | EP0116464B1 (enExample) |
| JP (1) | JPS59144098A (enExample) |
| KR (1) | KR890005156B1 (enExample) |
| CA (1) | CA1214553A (enExample) |
| DE (1) | DE3484514D1 (enExample) |
| IE (1) | IE56815B1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6148200A (ja) * | 1984-08-14 | 1986-03-08 | Fujitsu Ltd | 半導体記憶装置 |
| JPS6355799A (ja) * | 1986-08-26 | 1988-03-10 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JP2590897B2 (ja) * | 1987-07-20 | 1997-03-12 | 日本電気株式会社 | 半導体メモリ |
| US4807191A (en) * | 1988-01-04 | 1989-02-21 | Motorola, Inc. | Redundancy for a block-architecture memory |
| JPH01167760U (enExample) * | 1988-05-16 | 1989-11-27 | ||
| US5134584A (en) * | 1988-07-22 | 1992-07-28 | Vtc Incorporated | Reconfigurable memory |
| JPH0289299A (ja) * | 1988-09-27 | 1990-03-29 | Nec Corp | 半導体記憶装置 |
| US7190617B1 (en) | 1989-04-13 | 2007-03-13 | Sandisk Corporation | Flash EEprom system |
| US7447069B1 (en) | 1989-04-13 | 2008-11-04 | Sandisk Corporation | Flash EEprom system |
| DE69034227T2 (de) | 1989-04-13 | 2007-05-03 | Sandisk Corp., Sunnyvale | EEprom-System mit Blocklöschung |
| KR910005601B1 (ko) * | 1989-05-24 | 1991-07-31 | 삼성전자주식회사 | 리던던트 블럭을 가지는 반도체 메모리장치 |
| JP2837433B2 (ja) * | 1989-06-05 | 1998-12-16 | 三菱電機株式会社 | 半導体記憶装置における不良ビット救済回路 |
| JPH03116498A (ja) * | 1989-09-28 | 1991-05-17 | Nec Ic Microcomput Syst Ltd | 記憶装置 |
| GB8926004D0 (en) * | 1989-11-17 | 1990-01-10 | Inmos Ltd | Repairable memory circuit |
| US5126973A (en) * | 1990-02-14 | 1992-06-30 | Texas Instruments Incorporated | Redundancy scheme for eliminating defects in a memory device |
| JPH03241598A (ja) * | 1990-02-19 | 1991-10-28 | Fujitsu Ltd | シグネチャー回路 |
| US5274593A (en) * | 1990-09-28 | 1993-12-28 | Intergraph Corporation | High speed redundant rows and columns for semiconductor memories |
| JPH06111596A (ja) * | 1990-10-09 | 1994-04-22 | Texas Instr Inc <Ti> | メモリ |
| JP3001252B2 (ja) * | 1990-11-16 | 2000-01-24 | 株式会社日立製作所 | 半導体メモリ |
| JPH06203595A (ja) * | 1991-08-30 | 1994-07-22 | Texas Instr Inc <Ti> | ユニバーサル・モジューラ・メモリ |
| KR100296850B1 (ko) * | 1992-05-28 | 2001-10-24 | 썬 마이크로시스템즈, 인코포레이티드 | 캐시램용다수의뱅크열용장성초기화제어기 |
| US5471479A (en) * | 1992-08-06 | 1995-11-28 | Motorola, Inc. | Arrangement for column sparing of memory |
| JP2980472B2 (ja) * | 1992-12-21 | 1999-11-22 | 株式会社東芝 | 半導体記憶装置 |
| JP2833574B2 (ja) * | 1996-03-28 | 1998-12-09 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| US6249464B1 (en) | 1999-12-15 | 2001-06-19 | Cypress Semiconductor Corp. | Block redundancy in ultra low power memory circuits |
| JP2007257791A (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Ltd | 半導体記憶装置 |
| US8837192B2 (en) * | 2012-10-19 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company Limited | N-bit rom cell |
| WO2019009902A1 (en) * | 2017-07-06 | 2019-01-10 | Hewlett-Packard Development Company, L.P. | Decoders for memories of fluid ejection devices |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4281398A (en) * | 1980-02-12 | 1981-07-28 | Mostek Corporation | Block redundancy for memory array |
| CA1158775A (en) * | 1980-06-04 | 1983-12-13 | Thomas L. Phinney | Computer annotation system |
| JPS57150197A (en) * | 1981-03-11 | 1982-09-16 | Nippon Telegr & Teleph Corp <Ntt> | Storage circuit |
| US4471472A (en) * | 1982-02-05 | 1984-09-11 | Advanced Micro Devices, Inc. | Semiconductor memory utilizing an improved redundant circuitry configuration |
-
1983
- 1983-02-08 JP JP58018027A patent/JPS59144098A/ja active Granted
-
1984
- 1984-02-01 CA CA000446571A patent/CA1214553A/en not_active Expired
- 1984-02-07 IE IE285/84A patent/IE56815B1/en not_active IP Right Cessation
- 1984-02-08 EP EP84300802A patent/EP0116464B1/en not_active Expired
- 1984-02-08 DE DE8484300802T patent/DE3484514D1/de not_active Expired - Lifetime
- 1984-02-08 KR KR1019840000580A patent/KR890005156B1/ko not_active Expired
- 1984-02-08 US US06/578,000 patent/US4604730A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59144098A (ja) | 1984-08-17 |
| IE56815B1 (en) | 1991-12-18 |
| EP0116464A3 (en) | 1987-06-03 |
| CA1214553A (en) | 1986-11-25 |
| KR840008073A (ko) | 1984-12-12 |
| EP0116464A2 (en) | 1984-08-22 |
| US4604730A (en) | 1986-08-05 |
| EP0116464B1 (en) | 1991-05-02 |
| IE840285L (en) | 1984-08-08 |
| DE3484514D1 (de) | 1991-06-06 |
| JPS6237479B2 (enExample) | 1987-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR890005156B1 (ko) | 반도체 기억장치 | |
| KR950014802B1 (ko) | 불휘발성 반도체 메모리 장치 | |
| KR910001533B1 (ko) | 휴즈회로와 그내의 휴즈상태 검출회로를 갖는 반도체장치 | |
| JPH03157897A (ja) | 半導体記憶装置の冗長回路 | |
| US7760553B2 (en) | Fuse circuit and flash memory device having the same | |
| EP0116440B1 (en) | Integrated semiconductor circuit device for generating a switching control signal | |
| WO1981002360A1 (en) | Block redundancy for memory array | |
| JPH0334640B2 (enExample) | ||
| JPS59140700A (ja) | 集積回路メモリ用のデコード装置 | |
| JPH05307898A (ja) | 半導体メモリ装置 | |
| JP2706659B2 (ja) | メモリ内で冗長素子に切換えるためのスイッチ素子を備える集積回路 | |
| US4870618A (en) | Semiconductor memory equipped with test circuit for testing data holding characteristic during data programming period | |
| JP4115045B2 (ja) | 半導体記憶装置 | |
| US6809973B2 (en) | Flash memory device capable of repairing a word line | |
| US6163497A (en) | Semiconductor memory device | |
| US6288964B1 (en) | Method to electrically program antifuses | |
| US8116163B2 (en) | Semiconductor memory device | |
| US7359264B2 (en) | Semiconductor memory device | |
| KR0172349B1 (ko) | 로우 리던던시 회로를 가지는 반도체 메모리 장치 | |
| JPH022240B2 (enExample) | ||
| JPS58175195A (ja) | 半導体メモリ− | |
| JPS58175196A (ja) | 半導体メモリ− | |
| JPH06150689A (ja) | 半導体メモリ | |
| JPH05243386A (ja) | 半導体記憶装置 | |
| JPH04368699A (ja) | 半導体記憶装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
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| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
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| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
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| FPAY | Annual fee payment |
Payment date: 19921201 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
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| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19931215 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
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| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19931215 |
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| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
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| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |