KR880010480A - 유리질층을 형성하는 방법 및 이를 위한 피복용액 - Google Patents

유리질층을 형성하는 방법 및 이를 위한 피복용액 Download PDF

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KR880010480A
KR880010480A KR1019880001342A KR880001342A KR880010480A KR 880010480 A KR880010480 A KR 880010480A KR 1019880001342 A KR1019880001342 A KR 1019880001342A KR 880001342 A KR880001342 A KR 880001342A KR 880010480 A KR880010480 A KR 880010480A
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coating solution
alcohol
solution according
substrate
silicic acid
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KR1019880001342A
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요아힘 메렘 한스
그라프 베르너
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베틀라우퍼, 오일러
훽스트 아크티엔게젤샤프트
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Application filed by 베틀라우퍼, 오일러, 훽스트 아크티엔게젤샤프트 filed Critical 베틀라우퍼, 오일러
Publication of KR880010480A publication Critical patent/KR880010480A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02—Polysilicates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Architecture (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Chemically Coating (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

내용 없음

Description

유리질층을 형성하는 방법 및 이를 위한 피복용액
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (13)

  1. 필수적으로 규산 에스테르, 용매로서 탄소수 4 이상의 지방족 알콜, 촉매 활성량의 +3 미만의 pka를 지닌 산 및 물을 함유하는, 기판상에 유리질층을 형성시키기 위한 피복용액.
  2. 제1항에 있어서, 규산 에스테르가 테트라 알콕시실란, 테트라(알콕시알콕시)실란 및/또는 폴리(알콕시실록산)인 피복용액.
  3. 제2항에 있어서, 폴리(알콕시실록산)이 예비 가수분해된 피복용액.
  4. 제1항 내지 3항중 어느 한항에 있어서, 피복용액 내의 규산 에스테르의 함량이 피복용액 총중량을 기준으로 하여 2 내지 50중량%, 특히 5 내지 25중량%인 피복용액.
  5. 제1항에 있어서, 용매가 50중량% 이상의 알콜을 함유하는 혼합물인 피복용액.
  6. 제1항 또는 5항에 있어서, 알콜이 1가 알콜 또는 다가 알콜, 특히 부분적으로 에테르화되거나 올리고머성 에테르화된 2가 알콜, 특히 이량체 또는 삼량체성 알콜인 피복용액.
  7. 제1항에 있어서, 산의 pka가 +2 내지 -6인 피복용액.
  8. 제1항 또는 7항에 있어서, 산이 유기산인 피복용액.
  9. 제1항에 있어서, 물이 가수분해성 그룹을 완전 가수분해시키는데 필요한 양에 비하여, 90 내지 200%의 양으로 존재하는 피복용액.
  10. 규산 에스테르, 용매, 물 및 산의 균일한 혼합물을 제조하고, 0 내지 120℃, 바람직하게는 20 내지 80℃에서 규산 에스테르를 중축합시킨 다음, 기판상에 피복용액을 전착시키고 열처리시킴을 특 징으로 하여, 제1항 내지 9항에서 청구한 피복용액을 사용하여 기판상에 "조선현상(striation)"이 없는 피복물을 형성시키는 방법.
  11. 제10항에 있어서, 감광성 내식층을 공지의 방식으로, 열처리된 유리질 층상에 전착시키는 방법.
  12. 제10항 또는 11항에 있어서, 기판이 금속, 산화금속 또는 중합체층 특히 반도체 기판 또는 액정 디스플레이인 방법.
  13. 제10항에 있어서, 피복물의 두께가 열처리 후에, 20nm 내지 5.0㎛ 특히 5.0nm 내지 2.0㎛인 방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880001342A 1987-02-13 1988-02-12 유리질층을 형성하는 방법 및 이를 위한 피복용액 KR880010480A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3704518.0 1987-02-13
DE19873704518 DE3704518A1 (de) 1987-02-13 1987-02-13 Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten

Publications (1)

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KR880010480A true KR880010480A (ko) 1988-10-10

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Country Link
US (1) US4842901A (ko)
EP (1) EP0280085B1 (ko)
JP (1) JPS63223185A (ko)
KR (1) KR880010480A (ko)
AT (1) ATE65792T1 (ko)
DE (2) DE3704518A1 (ko)

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Publication number Publication date
DE3704518A1 (de) 1988-08-25
DE3863935D1 (de) 1991-09-05
EP0280085B1 (de) 1991-07-31
EP0280085A1 (de) 1988-08-31
US4842901A (en) 1989-06-27
JPS63223185A (ja) 1988-09-16
ATE65792T1 (de) 1991-08-15

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