KR960019570A - 불순물 함유 절연막의 흡습 방지 방법 - Google Patents

불순물 함유 절연막의 흡습 방지 방법 Download PDF

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Publication number
KR960019570A
KR960019570A KR1019940028665A KR19940028665A KR960019570A KR 960019570 A KR960019570 A KR 960019570A KR 1019940028665 A KR1019940028665 A KR 1019940028665A KR 19940028665 A KR19940028665 A KR 19940028665A KR 960019570 A KR960019570 A KR 960019570A
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KR
South Korea
Prior art keywords
impurity
insulating film
containing insulating
moisture absorption
alcohol
Prior art date
Application number
KR1019940028665A
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English (en)
Inventor
이상규
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940028665A priority Critical patent/KR960019570A/ko
Priority to US08/558,585 priority patent/US5707686A/en
Priority to GB9522357A priority patent/GB2294651B/en
Priority to DE19540894A priority patent/DE19540894B4/de
Publication of KR960019570A publication Critical patent/KR960019570A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/976—Temporary protective layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

본 발명은 반도체 소자 제조공정 중 대기 노출시 수분 흡수로 인한 막질 변형을 방지하는 불순물 함유 절연막의 흡습 방지 방법에 관한 것으로, 불순불 함유 절연막을 형성하는 단계; 상기 불순물 함유 절연막(6) 상부에 알콜계 물질을 도포하여 알콜막(7)을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.

Description

불순물 함유 절연막의 흡습 방지 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 일실시예의 공정 단면도.

Claims (4)

  1. 반도체 제조공정중 불순물 함유 절연막의 수분 흡수로 인한 막질 변형을 방지하는 불순물 함유 절연막의 흡습 방지 방법에 있어서, 불순불 함유 절연막을 형성하는 단계; 상기 불순물 함유 절연막 상부에 알콜계 물질을 도포하여 알콜막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 불순물 함유 절연막의 흡습 방지 방법.
  2. 제1항에 있어서, 상기 불순물 함유 절연막은 BPSG막인 것을 특징으로 하는 불순물 함유 절연막의 흡습 방지 방법.
  3. 제1항 또는 제2항에 있어서, 상기 알콜계 물질은 에틸알콜, 이소프로필알콜, 또는 메틸알콜 중 어느 하나인 것을 특징으로 하는 불순물 함유 절연막의 흡습 방지 방법.
  4. 제3항에 있어서, 상기 알콜막은 회전속도 0 내지 500rpm의 속도에서 5 내지 20초동안 회전, 건조되어 형성되는 것을 특징으로 하는 불순물 함유 절연막의 흡습 방지 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940028665A 1994-11-02 1994-11-02 불순물 함유 절연막의 흡습 방지 방법 KR960019570A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019940028665A KR960019570A (ko) 1994-11-02 1994-11-02 불순물 함유 절연막의 흡습 방지 방법
US08/558,585 US5707686A (en) 1994-11-02 1995-10-31 Method for preventing moisture from being absorbed into impurity-contained insulating layer
GB9522357A GB2294651B (en) 1994-11-02 1995-11-01 Method and arrangement for minimising the absorbtion of moisture into an impurity containing insulating layer
DE19540894A DE19540894B4 (de) 1994-11-02 1995-11-02 Verfahren zur Verhinderung der Absorption von Feuchtigkeit in eine Störstellen enthaltende Isolationsschicht

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940028665A KR960019570A (ko) 1994-11-02 1994-11-02 불순물 함유 절연막의 흡습 방지 방법

Publications (1)

Publication Number Publication Date
KR960019570A true KR960019570A (ko) 1996-06-17

Family

ID=19396934

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940028665A KR960019570A (ko) 1994-11-02 1994-11-02 불순물 함유 절연막의 흡습 방지 방법

Country Status (4)

Country Link
US (1) US5707686A (ko)
KR (1) KR960019570A (ko)
DE (1) DE19540894B4 (ko)
GB (1) GB2294651B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462368B1 (ko) * 1996-12-28 2005-04-06 매그나칩 반도체 유한회사 반도체소자의제조방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2322734A (en) * 1997-02-27 1998-09-02 Nec Corp Semiconductor device and a method of manufacturing the same
CN106506098B (zh) * 2016-10-12 2019-04-26 青岛海信移动通信技术股份有限公司 一种射频测试开关和无线通信设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154794A (ja) * 1985-12-27 1987-07-09 ノードソン株式会社 実装回路板への防湿絶縁剤の被覆方法
DE3704518A1 (de) * 1987-02-13 1988-08-25 Hoechst Ag Beschichtungsloesung und verfahren zur erzeugung glasartiger schichten
US5108784A (en) * 1987-12-16 1992-04-28 Ford Motor Company Composite polymer/desiccant coatings for IC encapsulation
US5302198A (en) * 1990-09-14 1994-04-12 Ncr Corporation Coating solution for forming glassy layers
KR940009599B1 (ko) * 1991-10-30 1994-10-15 삼성전자 주식회사 반도체 장치의 층간 절연막 형성방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100462368B1 (ko) * 1996-12-28 2005-04-06 매그나칩 반도체 유한회사 반도체소자의제조방법

Also Published As

Publication number Publication date
GB9522357D0 (en) 1996-01-03
GB2294651A (en) 1996-05-08
GB2294651B (en) 1998-05-06
US5707686A (en) 1998-01-13
DE19540894A1 (de) 1996-05-09
DE19540894B4 (de) 2006-12-07

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