KR950025907A - 반도체소자의 감광막 형성방법 - Google Patents

반도체소자의 감광막 형성방법 Download PDF

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Publication number
KR950025907A
KR950025907A KR1019940001941A KR19940001941A KR950025907A KR 950025907 A KR950025907 A KR 950025907A KR 1019940001941 A KR1019940001941 A KR 1019940001941A KR 19940001941 A KR19940001941 A KR 19940001941A KR 950025907 A KR950025907 A KR 950025907A
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KR
South Korea
Prior art keywords
semiconductor wafer
photosensitive film
semiconductor device
photoresist film
increased
Prior art date
Application number
KR1019940001941A
Other languages
English (en)
Other versions
KR970009977B1 (en
Inventor
배상만
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR94001941A priority Critical patent/KR970009977B1/ko
Priority to DE19503388A priority patent/DE19503388C2/de
Priority to US08/382,756 priority patent/US5498449A/en
Publication of KR950025907A publication Critical patent/KR950025907A/ko
Application granted granted Critical
Publication of KR970009977B1 publication Critical patent/KR970009977B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

본 발명은 반도체 소자의 감광막 형성방법에 관한 것으로서, 표면의 굴곡이 심한 반도체웨이퍼의 정면이 위로 향하도록하여 저속회전시키며 감광막을 도포한후, 상기 반도체웨이퍼의 배면이 위로향하도록 하여 고속회전시켜 회전력 및 중력에 의해 감광수지가 돌출부쪽으로 집중되어 감광막의 돌출부분과 골부분의 두께를 거의 균일하게 형성하였으므로, 후속 노광공정시 광흡수율이 균일하여 임계크기의 균일도가 증가되므로 표면의 굴곡이 심한 반도체 소자에서 신뢰성 및 공정수율이 증가되고, 반도체 소자의 고집적화가 유리하다.

Description

반도체소자의 감광막 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 감광막 형성방법을 설명하기 위한 개략도.

Claims (1)

  1. 패턴을 형성하고자 하는 반도체 웨이퍼의 정면이 위로 향하도록하여 저속회전시키며 감광막을 도포하는 공정과, 상기 반도체웨이퍼의 배면이 위로 향하도록한 후 고속회전시켜 반도체 웨이퍼 표면의 굴곡과 무관하게 균일한 두께로 감광막을 형성하는 공정을 구비하는 반도체 소자의 감광막 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR94001941A 1994-02-03 1994-02-03 Method of deposisting a photoresist in the semiconductor device KR970009977B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR94001941A KR970009977B1 (en) 1994-02-03 1994-02-03 Method of deposisting a photoresist in the semiconductor device
DE19503388A DE19503388C2 (de) 1994-02-03 1995-02-02 Photolackfilm-Beschichtungsverfahren
US08/382,756 US5498449A (en) 1994-02-03 1995-02-02 Photoresist film coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR94001941A KR970009977B1 (en) 1994-02-03 1994-02-03 Method of deposisting a photoresist in the semiconductor device

Publications (2)

Publication Number Publication Date
KR950025907A true KR950025907A (ko) 1995-09-18
KR970009977B1 KR970009977B1 (en) 1997-06-19

Family

ID=19376689

Family Applications (1)

Application Number Title Priority Date Filing Date
KR94001941A KR970009977B1 (en) 1994-02-03 1994-02-03 Method of deposisting a photoresist in the semiconductor device

Country Status (3)

Country Link
US (1) US5498449A (ko)
KR (1) KR970009977B1 (ko)
DE (1) DE19503388C2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0171918B1 (ko) * 1994-03-25 1999-03-30 김주용 감광수지 코팅 두께 조절방법 및 조절장치
US5677001A (en) * 1996-08-22 1997-10-14 Vanguard International Semiconductor Corporation Striation-free coating method for high viscosity resist coating
US6117486A (en) * 1997-03-31 2000-09-12 Tokyo Electron Limited Photoresist coating method and apparatus
US20050046375A1 (en) * 2002-07-31 2005-03-03 Maslov Boris A. Software-based adaptive control system for electric motors and generators
US20050074552A1 (en) * 2003-10-07 2005-04-07 Howard Ge Photoresist coating process for microlithography

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3795534A (en) * 1972-04-19 1974-03-05 Rca Corp Manufacture of video discs
DE2816213A1 (de) * 1977-04-18 1978-10-26 Exxon Research Engineering Co Verfahren zum schmieren von beruehrungsflaechen bei hohen temperaturen und/oder oxidationsbedingungen sowie schmiermittel zur durchfuehrung des verfahrens
US4590094A (en) * 1984-10-29 1986-05-20 International Business Machines Corporation Inverted apply using bubble dispense

Also Published As

Publication number Publication date
DE19503388A1 (de) 1995-08-10
US5498449A (en) 1996-03-12
DE19503388C2 (de) 2002-08-01
KR970009977B1 (en) 1997-06-19

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