KR870005438A - 반도체 장치 제조방법 및 장치 - Google Patents
반도체 장치 제조방법 및 장치 Download PDFInfo
- Publication number
- KR870005438A KR870005438A KR860009492A KR860009492A KR870005438A KR 870005438 A KR870005438 A KR 870005438A KR 860009492 A KR860009492 A KR 860009492A KR 860009492 A KR860009492 A KR 860009492A KR 870005438 A KR870005438 A KR 870005438A
- Authority
- KR
- South Korea
- Prior art keywords
- holder
- chamber
- cvd
- type
- cvd system
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 11
- 238000004519 manufacturing process Methods 0.000 title claims 5
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims 18
- 230000008021 deposition Effects 0.000 claims 5
- 238000004891 communication Methods 0.000 claims 2
- 230000006835 compression Effects 0.000 claims 2
- 238000007906 compression Methods 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 241000380131 Ammophila arenaria Species 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
Classifications
-
- H01L21/203—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32678—Electron cyclotron resonance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02535—Group 14 semiconducting materials including tin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 ECR 보강 CVD 시스템의 횡단면도.
제2도는 본 발명 일실시예의 횡단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반응 챔버 2 : 공진 챔버
3 : 마이크로파 발진기 4 : 절연자
5 및 5' : 헬름 홀츠 코일 6 : 전원
9 : 진공 펌프 11 : 배기 시스템
10 : 기판 31 : 기판 홀더
Claims (16)
- 반도체 장치 제조 시스템으로서,CVD처리가 실행되는 제1 반응 챔버를 가지는 제1 CVD시스템과,마이크로파보강 CVD가 실행되는 제2 반응 챔버를 가지는 제2 CVD시스템을 구비하며, 상기 제1 및 제2 반응 챔버는 서로간에 연통하도록 되어 있으며,기판이 작착된 기판 홀더와,상기 제1 챔버 내측으로 부터 공기압축 방법으로 상기 제2챔버 내측으로 상기 홀더를 전송하기 위한 전송 수단을 구비하는 것을 특징으로 하는 반도체 장치 제조장치.
- 제1항에 있어서,CVD 처리가 실행되는 제3 챔버를 가지는 제3 CVD 시스템을 구비하여, 상기 제2 및 제3 챔버가 공기압축 방법으로 서로간에 연통하도록 되어 있는 것을 특징으로 하는 반도체 장치 제조장치.
- 제2항에 있어서,상기 제1 CVD 시스템은 p형 반도체층의 침착을 수행하는데 적합하고,상기 제2 CVD 시스템은 i형 반도체층의 침착을 수행하는데 적합하며,상기 제3 CVD 시스템은 n형 반도체층의 침착을 수행하는데 적합하도록 구성되어 있는 것을 특징으로 하는 반도체 장치 제조장치.
- 제1항에 있어서,상기 제1 및 제2 챔버간을 분배하는 게이트 밸브를 포함하는 것을 특징으로 하는 반도체 장치 제조장치.
- 제1항에 있어서,상기 홀더는 칼라형으로 형성되며 여기에서 기판이 보유되는 것을 특징으로 하는 반도체 장치 제조장치.
- 제5항에 있어서,칼라형 홀더는, 홀더가 챔버내에 배치될시에 CVD에 대한 화학반응이 발생하는 반응 영역을 상기 홀더내로 실질적으로 한정하는 것을 특징으로 하는 반도체 장치 제조 장치.
- 제1항에 있어서,마이크로파 보강 CVD 시스템은 ECR 시스템과 CVD 시스템과 조합된 것을 특징으로 하는 반도체 장치 제조장치.
- 제7항에 있어서,상기 제1 CVD 시스템은 글로우 방전 CVD 시스템인 것을 특징으로 하는 반도체 장치 제조장치.
- 제7항에 있어서,상기 제1 CVD 시스템은 광 보강 CVD 시스템인 것을 특징으로 하는 반도체 장치 제조장치.
- 제3항에 있어서,형성된 상기 층은 태양 전지인 것을 특징으로 하는 반도체 장치 제조장치.
- 반도체장치 제조 바업으로서,기판을 기판 홀더상에 설치하는 단계와,상기 홀더를 제1 반응 챔버내에 배치하는 단계와,상기 제1 반응 챔버내에서 제1 CVD 처리를 수행하는 단계와,상기 기판을 대기중의 공기와 접촉되게 함이 없이, 상기 홀더를 상기 제1 챔버로 부터 제2 반응 챔버로 전달하는 단계 및,상기 제2 반응 챔버내의 마이크로파에 의해 보강된 제2 화학 반응을 수행하는 단계로 이루어진 것을 특징으로 하는 반도체 장치 제조방법.
- 제11항에 있어서,상기 기판을 대기중의 공기와 접촉되게 함이 없이 상기 홀더를 상기 제2챔버로부터 제3반응 챔버로 전달하는 단계와,상기 제3 반응 챔버내에서 제3화학 반응을 수행하는 단계로 이루어진 것을 특징으로 하는 반도체 장치 제조방법.
- 제12항에 있어서,상기 제1, 제2 및 제3 화학 반응이 p-형, i-형 및 n-형 반도체 층의 침착과 함께 발생하는 단계를 특징으로 하는 반도체 장치 제조방법.
- 제12항에 있어서,상기 제1, 제2 및 제3 화학 반응이 n-형, i-형 및 p-형 반도체 층의 침착과 함께 발생하는 단계를 특징으로 하는 반도체 장치 제조방법.
- 제13항에 있어서,상기 p-형, i-형 및 n-형 반도체가 일체적으로 태양 전지를 구성하는 단계를 특징으로 하는 반도체 장치 제조방법.
- 제11항에 있어서,상기 제2화학 반응이 규소가스, 게르마늄 혼합가스, 주석 혼합가스 또는 탄화물 가스로 진행되는 단계를 특징으로 하는 반도체 장치 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60253299A JP2654433B2 (ja) | 1985-11-12 | 1985-11-12 | 珪素半導体作製方法 |
JP253299 | 1985-11-12 | ||
JP60259194A JPH0766911B2 (ja) | 1985-11-18 | 1985-11-18 | 被膜形成方法 |
JP259194 | 1985-11-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870005438A true KR870005438A (ko) | 1987-06-08 |
KR910003169B1 KR910003169B1 (ko) | 1991-05-20 |
Family
ID=26541131
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860009492A KR910003169B1 (ko) | 1985-11-12 | 1986-11-11 | 반도체 장치 제조 방법 및 장치 |
KR1019900011462A KR910003171B1 (ko) | 1985-11-12 | 1990-07-27 | 반도체 장치 제조 방법 및 시스템 |
KR1019900011461A KR910003170B1 (ko) | 1985-11-12 | 1990-07-27 | 반도체 장치 제조 방법 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900011462A KR910003171B1 (ko) | 1985-11-12 | 1990-07-27 | 반도체 장치 제조 방법 및 시스템 |
KR1019900011461A KR910003170B1 (ko) | 1985-11-12 | 1990-07-27 | 반도체 장치 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US4808553A (ko) |
EP (2) | EP0224360B1 (ko) |
KR (3) | KR910003169B1 (ko) |
CN (3) | CN1029442C (ko) |
DE (1) | DE3684759D1 (ko) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US5753542A (en) * | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
US5258364A (en) * | 1987-10-07 | 1993-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of shaping superconducting oxide material |
US5179073A (en) * | 1987-10-07 | 1993-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Method of shaping superconducting oxide material |
JPH067594B2 (ja) * | 1987-11-20 | 1994-01-26 | 富士通株式会社 | 半導体基板の製造方法 |
GB2213835B (en) * | 1987-12-18 | 1992-07-08 | Gen Electric Co Plc | Deposition apparatus |
KR920003431B1 (ko) * | 1988-02-05 | 1992-05-01 | 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 | 플라즈마 처리 방법 및 장치 |
JPH01239919A (ja) * | 1988-03-22 | 1989-09-25 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法およびプラズマ処理装置 |
EP0334109B1 (de) * | 1988-03-24 | 1993-06-02 | Siemens Aktiengesellschaft | Verfahren und Vorrichtung zum Herstellen von aus amorphen Silizium-Germanium-Legierungen bestehenden Halbleiterschichten nach der Glimmentladungstechnik, insbesondere für Solarzellen |
US5174881A (en) * | 1988-05-12 | 1992-12-29 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming a thin film on surface of semiconductor substrate |
US5407867A (en) * | 1988-05-12 | 1995-04-18 | Mitsubishki Denki Kabushiki Kaisha | Method of forming a thin film on surface of semiconductor substrate |
US5232868A (en) * | 1988-10-04 | 1993-08-03 | Agency Of Industrial Science And Technology | Method for forming a thin semiconductor film |
US4962063A (en) * | 1988-11-10 | 1990-10-09 | Applied Materials, Inc. | Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing |
US5112776A (en) * | 1988-11-10 | 1992-05-12 | Applied Materials, Inc. | Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing |
US5152866A (en) * | 1989-01-13 | 1992-10-06 | Hughes Aircraft Company | Plasma/radiation assisted molecular beam epitaxy method |
NL8900469A (nl) * | 1989-02-24 | 1990-09-17 | Imec Inter Uni Micro Electr | Werkwijze en toestel voor het aanbrengen van epitaxiaal silicium en silicides. |
DE69033663T2 (de) * | 1989-08-28 | 2001-06-21 | Hitachi, Ltd. | Verfahren zur Behandlung eines Aluminium enthaltenden Musters |
JP2948842B2 (ja) * | 1989-11-24 | 1999-09-13 | 日本真空技術株式会社 | インライン型cvd装置 |
DE69116058T2 (de) * | 1990-09-27 | 1996-08-22 | At & T Corp | Verfahren zur Herstellung integrierter Schaltungen |
US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
TW237562B (ko) * | 1990-11-09 | 1995-01-01 | Semiconductor Energy Res Co Ltd | |
JPH04253328A (ja) * | 1991-01-29 | 1992-09-09 | Hitachi Ltd | 表面処理装置 |
US5578520A (en) | 1991-05-28 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for annealing a semiconductor |
US5766344A (en) | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
US6979840B1 (en) * | 1991-09-25 | 2005-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having anodized metal film between the gate wiring and drain wiring |
US7097712B1 (en) * | 1992-12-04 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for processing a semiconductor |
CN1052566C (zh) * | 1993-11-05 | 2000-05-17 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
US6897100B2 (en) * | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
WO1995026571A1 (en) * | 1994-03-25 | 1995-10-05 | Amoco/Enron Solar | Stabilized amorphous silicon and devices containing same |
JP3317209B2 (ja) * | 1997-08-12 | 2002-08-26 | 東京エレクトロンエイ・ティー株式会社 | プラズマ処理装置及びプラズマ処理方法 |
AU5600200A (en) | 1999-06-10 | 2001-01-02 | Allied-Signal Inc. | Spin-on-glass anti-reflective coatings for photolithography |
JP4439665B2 (ja) * | 2000-03-29 | 2010-03-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置 |
GB0214273D0 (en) * | 2002-06-20 | 2002-07-31 | Boc Group Plc | Apparatus for controlling the pressure in a process chamber and method of operating same |
DE102005004311A1 (de) * | 2005-01-31 | 2006-08-03 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von aus mehreren Komponentenhalbleitern bestehende Schichtenfolgen |
US20090078199A1 (en) * | 2007-09-21 | 2009-03-26 | Innovation Vacuum Technology Co., Ltd. | Plasma enhanced chemical vapor deposition apparatus |
US20110297088A1 (en) * | 2010-06-04 | 2011-12-08 | Texas Instruments Incorporated | Thin edge carrier ring |
JP6285446B2 (ja) * | 2012-10-09 | 2018-02-28 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 割り送り式インライン基板処理ツール |
US20150040970A1 (en) * | 2013-08-06 | 2015-02-12 | First Solar, Inc. | Vacuum Deposition System For Solar Cell Production And Method Of Manufacturing |
CN103556126A (zh) * | 2013-10-14 | 2014-02-05 | 中国科学院半导体研究所 | 优化配置的多腔室mocvd反应系统 |
US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
KR20170005240A (ko) * | 2015-07-01 | 2017-01-12 | 주식회사 아바코 | 도전 산화물층의 증착 장비 및 방법 |
CN109750274B (zh) * | 2017-11-01 | 2021-10-22 | 长鑫存储技术有限公司 | 半导体生产设备及半导体工艺方法 |
CN111739971B (zh) * | 2020-08-03 | 2021-02-19 | 苏州迈正科技有限公司 | 镀膜设备、方法、系统及太阳能电池、组件、发电系统 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3594227A (en) * | 1968-07-12 | 1971-07-20 | Bell Telephone Labor Inc | Method for treating semiconductor slices with gases |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
JPS5766625A (en) * | 1980-10-11 | 1982-04-22 | Semiconductor Energy Lab Co Ltd | Manufacture of film |
JPS58169980A (ja) * | 1982-03-19 | 1983-10-06 | Matsushita Electric Ind Co Ltd | 光起電力素子の製造方法 |
US4435445A (en) * | 1982-05-13 | 1984-03-06 | Energy Conversion Devices, Inc. | Photo-assisted CVD |
US4504518A (en) * | 1982-09-24 | 1985-03-12 | Energy Conversion Devices, Inc. | Method of making amorphous semiconductor alloys and devices using microwave energy |
EP0106637B1 (en) * | 1982-10-12 | 1988-02-17 | National Research Development Corporation | Infra red transparent optical components |
US4515107A (en) * | 1982-11-12 | 1985-05-07 | Sovonics Solar Systems | Apparatus for the manufacture of photovoltaic devices |
JPS59159167A (ja) * | 1983-03-01 | 1984-09-08 | Zenko Hirose | アモルフアスシリコン膜の形成方法 |
JPS59200248A (ja) * | 1983-04-28 | 1984-11-13 | Canon Inc | 像形成部材の製造法 |
-
1986
- 1986-11-11 KR KR1019860009492A patent/KR910003169B1/ko not_active IP Right Cessation
- 1986-11-12 DE DE8686308829T patent/DE3684759D1/de not_active Expired - Fee Related
- 1986-11-12 EP EP86308829A patent/EP0224360B1/en not_active Expired - Lifetime
- 1986-11-12 EP EP91202023A patent/EP0457415A1/en not_active Withdrawn
- 1986-11-12 CN CN86107683A patent/CN1029442C/zh not_active Expired - Lifetime
-
1987
- 1987-07-04 CN CN87104656.3A patent/CN1005881B/zh not_active Expired
- 1987-07-04 CN CN87104657A patent/CN1007565B/zh not_active Expired
- 1987-11-10 US US07/118,894 patent/US4808553A/en not_active Expired - Fee Related
- 1987-11-10 US US07/118,893 patent/US4808554A/en not_active Expired - Lifetime
-
1990
- 1990-07-27 KR KR1019900011462A patent/KR910003171B1/ko not_active IP Right Cessation
- 1990-07-27 KR KR1019900011461A patent/KR910003170B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910003171B1 (ko) | 1991-05-20 |
KR920003832A (ko) | 1992-02-29 |
CN87104657A (zh) | 1987-12-16 |
CN1007565B (zh) | 1990-04-11 |
EP0224360B1 (en) | 1992-04-08 |
US4808553A (en) | 1989-02-28 |
CN87104656A (zh) | 1987-12-16 |
CN1029442C (zh) | 1995-08-02 |
CN86107683A (zh) | 1987-05-20 |
EP0457415A1 (en) | 1991-11-21 |
US4808554A (en) | 1989-02-28 |
KR910003169B1 (ko) | 1991-05-20 |
KR910003170B1 (ko) | 1991-05-20 |
KR920003833A (ko) | 1992-02-29 |
CN1005881B (zh) | 1989-11-22 |
EP0224360A2 (en) | 1987-06-03 |
DE3684759D1 (de) | 1992-05-14 |
EP0224360A3 (en) | 1987-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR870005438A (ko) | 반도체 장치 제조방법 및 장치 | |
KR970054585A (ko) | 질화물계 iii-v족 화합물 반도체 소자 및 그의 제조 방법 | |
US5976259A (en) | Semiconductor device, manufacturing method, and system | |
KR930005134A (ko) | 증착된 반도체상에 형성된 개선된 유전체 | |
KR890011040A (ko) | 실리콘 기판과 금속층 사이의 실리콘 카바이드 장벽층 | |
KR970705174A (ko) | 실리콘 캐패시터 제조 방법(process for producing a silicon capacitor) | |
KR970013071A (ko) | 반도체 장치용 최종 패시베이션 구조물 및 그 형성방법 | |
KR920008876A (ko) | Cvd실리콘 산화질화막의 제조방법 | |
JPS5766625A (en) | Manufacture of film | |
KR850008568A (ko) | 반도체 장치 | |
US3698071A (en) | Method and device employing high resistivity aluminum oxide film | |
KR970054583A (ko) | 발광 다이오드의 제조 방법 | |
US3753805A (en) | Method of producing planar, double-diffused semiconductor devices | |
US4099997A (en) | Method of fabricating a semiconductor device | |
IE841425L (en) | Foam semiconductor dopant carriers | |
IE33385B1 (en) | Semiconductor device and fabrication of same | |
KR950015593A (ko) | 반도체 소자의 확산방지용 티타늄나이트라이드 박막 형성방법 | |
US3808059A (en) | Method for manufacturing iii-v compound semiconductor device | |
KR870010638A (ko) | 금속절연 반도체형 다결정실리콘 태양전지의 제조방법 | |
KR910005434A (ko) | 저압화학증착비용 고온 배기가스의 냉각장치 | |
GB1318856A (en) | Semiconductor devices | |
JPS6489568A (en) | Manufacture of semiconductor device | |
JPS5671967A (en) | Semiconductor system | |
KR970030452A (ko) | 산화막과 질화막으로 이루어진 충간절연막의 식각방법 | |
KR970053508A (ko) | 반도체 소자의 텅스텐-플러그 형성 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050512 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |