KR870005438A - 반도체 장치 제조방법 및 장치 - Google Patents

반도체 장치 제조방법 및 장치 Download PDF

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KR870005438A
KR870005438A KR860009492A KR860009492A KR870005438A KR 870005438 A KR870005438 A KR 870005438A KR 860009492 A KR860009492 A KR 860009492A KR 860009492 A KR860009492 A KR 860009492A KR 870005438 A KR870005438 A KR 870005438A
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슌페이 야마자끼
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슌페이 야마자끼
가부시끼 가이샤 한도다이 에네르기 겐뀨소
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Abstract

내용 없음

Description

반도체 장치 제조 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 ECR 보강 CVD 시스템의 횡단면도.
제2도는 본 발명 일실시예의 횡단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반응 챔버 2 : 공진 챔버
3 : 마이크로파 발진기 4 : 절연자
5 및 5' : 헬름 홀츠 코일 6 : 전원
9 : 진공 펌프 11 : 배기 시스템
10 : 기판 31 : 기판 홀더

Claims (16)

  1. 반도체 장치 제조 시스템으로서,
    CVD처리가 실행되는 제1 반응 챔버를 가지는 제1 CVD시스템과,
    마이크로파보강 CVD가 실행되는 제2 반응 챔버를 가지는 제2 CVD시스템을 구비하며, 상기 제1 및 제2 반응 챔버는 서로간에 연통하도록 되어 있으며,
    기판이 작착된 기판 홀더와,
    상기 제1 챔버 내측으로 부터 공기압축 방법으로 상기 제2챔버 내측으로 상기 홀더를 전송하기 위한 전송 수단을 구비하는 것을 특징으로 하는 반도체 장치 제조장치.
  2. 제1항에 있어서,
    CVD 처리가 실행되는 제3 챔버를 가지는 제3 CVD 시스템을 구비하여, 상기 제2 및 제3 챔버가 공기압축 방법으로 서로간에 연통하도록 되어 있는 것을 특징으로 하는 반도체 장치 제조장치.
  3. 제2항에 있어서,
    상기 제1 CVD 시스템은 p형 반도체층의 침착을 수행하는데 적합하고,
    상기 제2 CVD 시스템은 i형 반도체층의 침착을 수행하는데 적합하며,
    상기 제3 CVD 시스템은 n형 반도체층의 침착을 수행하는데 적합하도록 구성되어 있는 것을 특징으로 하는 반도체 장치 제조장치.
  4. 제1항에 있어서,
    상기 제1 및 제2 챔버간을 분배하는 게이트 밸브를 포함하는 것을 특징으로 하는 반도체 장치 제조장치.
  5. 제1항에 있어서,
    상기 홀더는 칼라형으로 형성되며 여기에서 기판이 보유되는 것을 특징으로 하는 반도체 장치 제조장치.
  6. 제5항에 있어서,
    칼라형 홀더는, 홀더가 챔버내에 배치될시에 CVD에 대한 화학반응이 발생하는 반응 영역을 상기 홀더내로 실질적으로 한정하는 것을 특징으로 하는 반도체 장치 제조 장치.
  7. 제1항에 있어서,
    마이크로파 보강 CVD 시스템은 ECR 시스템과 CVD 시스템과 조합된 것을 특징으로 하는 반도체 장치 제조장치.
  8. 제7항에 있어서,
    상기 제1 CVD 시스템은 글로우 방전 CVD 시스템인 것을 특징으로 하는 반도체 장치 제조장치.
  9. 제7항에 있어서,
    상기 제1 CVD 시스템은 광 보강 CVD 시스템인 것을 특징으로 하는 반도체 장치 제조장치.
  10. 제3항에 있어서,
    형성된 상기 층은 태양 전지인 것을 특징으로 하는 반도체 장치 제조장치.
  11. 반도체장치 제조 바업으로서,
    기판을 기판 홀더상에 설치하는 단계와,
    상기 홀더를 제1 반응 챔버내에 배치하는 단계와,
    상기 제1 반응 챔버내에서 제1 CVD 처리를 수행하는 단계와,
    상기 기판을 대기중의 공기와 접촉되게 함이 없이, 상기 홀더를 상기 제1 챔버로 부터 제2 반응 챔버로 전달하는 단계 및,
    상기 제2 반응 챔버내의 마이크로파에 의해 보강된 제2 화학 반응을 수행하는 단계로 이루어진 것을 특징으로 하는 반도체 장치 제조방법.
  12. 제11항에 있어서,
    상기 기판을 대기중의 공기와 접촉되게 함이 없이 상기 홀더를 상기 제2챔버로부터 제3반응 챔버로 전달하는 단계와,
    상기 제3 반응 챔버내에서 제3화학 반응을 수행하는 단계로 이루어진 것을 특징으로 하는 반도체 장치 제조방법.
  13. 제12항에 있어서,
    상기 제1, 제2 및 제3 화학 반응이 p-형, i-형 및 n-형 반도체 층의 침착과 함께 발생하는 단계를 특징으로 하는 반도체 장치 제조방법.
  14. 제12항에 있어서,
    상기 제1, 제2 및 제3 화학 반응이 n-형, i-형 및 p-형 반도체 층의 침착과 함께 발생하는 단계를 특징으로 하는 반도체 장치 제조방법.
  15. 제13항에 있어서,
    상기 p-형, i-형 및 n-형 반도체가 일체적으로 태양 전지를 구성하는 단계를 특징으로 하는 반도체 장치 제조방법.
  16. 제11항에 있어서,
    상기 제2화학 반응이 규소가스, 게르마늄 혼합가스, 주석 혼합가스 또는 탄화물 가스로 진행되는 단계를 특징으로 하는 반도체 장치 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860009492A 1985-11-12 1986-11-11 반도체 장치 제조 방법 및 장치 KR910003169B1 (ko)

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JP60253299A JP2654433B2 (ja) 1985-11-12 1985-11-12 珪素半導体作製方法
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KR1019900011461A KR910003170B1 (ko) 1985-11-12 1990-07-27 반도체 장치 제조 방법
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Publication number Publication date
KR920003833A (ko) 1992-02-29
EP0224360A3 (en) 1987-08-19
CN1005881B (zh) 1989-11-22
CN87104656A (zh) 1987-12-16
CN87104657A (zh) 1987-12-16
CN1007565B (zh) 1990-04-11
CN1029442C (zh) 1995-08-02
US4808554A (en) 1989-02-28
KR910003169B1 (ko) 1991-05-20
KR910003170B1 (ko) 1991-05-20
EP0224360B1 (en) 1992-04-08
DE3684759D1 (de) 1992-05-14
EP0224360A2 (en) 1987-06-03
KR920003832A (ko) 1992-02-29
KR910003171B1 (ko) 1991-05-20
US4808553A (en) 1989-02-28
EP0457415A1 (en) 1991-11-21
CN86107683A (zh) 1987-05-20

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