JP6285446B2 - 割り送り式インライン基板処理ツール - Google Patents
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- JP6285446B2 JP6285446B2 JP2015535693A JP2015535693A JP6285446B2 JP 6285446 B2 JP6285446 B2 JP 6285446B2 JP 2015535693 A JP2015535693 A JP 2015535693A JP 2015535693 A JP2015535693 A JP 2015535693A JP 6285446 B2 JP6285446 B2 JP 6285446B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- Chemical Vapour Deposition (AREA)
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Description
Claims (14)
- 割り送り式インライン基板処理ツールであって、
基板キャリアと、
線状配置になるように、互いに結合される複数のモジュールと
を備え、
前記基板キャリアは、
ベースと、
各基板支持体の基板支持表面が「v」字状に前記ベースの上面から上方の外方へ拡がっている1対の対向する基板支持体であって、前記基板支持体は前記ベースの上面に結合されて上面から離れて延び、前記基板支持体は、それぞれ基板を支持し、前記基板支持体上に配置された基板の上面と、前記基板支持体上に配置された別の基板の上面とが対向する、基板支持体と、
前記ベースの上面に形成された複数のスロットであって、前記基板支持体がそれぞれ、前記複数のスロットのそれぞれの中に部分的に配置される、複数のスロットと、を備え、
前記複数のモジュールの各モジュールが、第1の端部、第2の端部、及び下面を有する筐体を備え、筐体の下面によって、前記基板キャリアを支持するとともに、前記複数のモジュールのうちの最初のモジュールから中間モジュールを経て最終のモジュールまで、前記複数のモジュールを通って前記基板キャリアが直動するための経路を提供し、
前記複数のモジュールのうちの少なくとも1つのモジュールが、
前記筐体の側面に配置されて、前記筐体内へ放射熱を取込可能な窓と、
前記筐体の前記側面に結合されて、前記窓を通って前記筐体内へ放射熱を提供する加熱ランプと、
前記筐体の頂部近傍に配置されて、前記筐体内へプロセスガスを提供するガス入口と、
前記ガス入口とは反対側の前記筐体の底部に配置されて、前記筐体から前記プロセスガスを除去する排気口と
を備える、割り送り式インライン基板処理ツール。 - 前記ベースがグラファイト製である、請求項1に記載の割り送り式インライン基板処理ツール。
- さらに、
前記ベースの底面にはチャネルが形成され、
前記ベースの上面には孔が形成され、前記孔は、前記チャネルに流体的に結合されて、ベース経由で1つまたは複数のガスを流し出すための経路を形成する、請求項1または2に記載の割り送り式インライン基板処理ツール。 - さらに、
前記ベース内部には、前記チャネルに外接して導管が形成され、導管は前記チャネルに洗浄ガスを提供する、請求項3に記載の割り送り式インライン基板処理ツール。 - さらに、
前記複数のモジュールの各モジュールと隣接するモジュールとの間には、バリアが配置され、バリアは各モジュールを隣接するモジュールから隔離する、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。 - 前記バリアが、可動ゲートまたはガスパージカーテンの1つである、請求項5に記載の割り送り式インライン基板処理ツール。
- 前記複数のモジュールの各モジュールは、ガスパージ、基板の温度変更、基板の焼成、材料堆積、材料堆積後の処理、または基板の冷却の1つを実施するように構成される、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。
- 前記複数のモジュールの内面には複数のローラが設けられ、ローラは、前記基板キャリアが前記複数のモジュールを通って移動するのを容易にする、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。
- 前記基板キャリアが、前記複数のモジュールを通ってトラック上を摺動する、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。
- さらに、
前記複数のモジュールのうちの少なくとも1つのモジュールの内面に石英ライナが配置される、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。 - 前記割り送り式インライン基板処理ツールに前記基板キャリアを提供するために、前記割り送り式インライン基板処理ツールの第1の端部に配置されたロードモジュールと、
前記割り送り式インライン基板処理ツールから前記基板キャリアを取り出すために、前記割り送り式インライン基板処理ツールの前記第1の端部とは反対側の第2の端部に配置されたアンロードモジュールと
をさらに備える、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。 - 前記基板キャリアを洗浄するために、前記複数のモジュールのうちの最終のモジュールの後から前記複数のモジュールのうちの最初のモジュールの前までの間に配置された洗浄モジュール
をさらに備える、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。 - 前記ガス入口が、
前記筐体内へプロセスガスの噴射流を提供するように構成された第1の組のガスオリフィスと、
前記筐体内へパージガスの層流を提供するように構成された第2の組のガスオリフィスとを備える、請求項1から4のいずれか一項に記載の割り送り式インライン基板処理ツール。 - 割り送り式インライン基板処理ツールであって、
基板キャリアと、
線状配置になるように、互いに結合される複数のモジュールと
を備え、
前記基板キャリアは、
ベースであって、
前記ベースの底面にはチャネルが形成され、
前記ベースの上面には孔が形成され、前記孔は、前記チャネルに流体的に結合されて、ベース経由で1つまたは複数のガスを流し出すための経路を形成し、前記ベース内部には、前記チャネルに外接して導管が形成され、導管は前記チャネルに洗浄ガスを提供するベースと、
各基板支持体の基板支持表面が「v」字状に前記ベースの上面から外方へ拡がっている1対の対向する基板支持体であって、前記基板支持体は前記ベースの上面に結合されて上面から離れて延び、前記基板支持体は、それぞれ基板を支持し、前記基板支持体上に配置された基板の上面と、前記基板支持体上に配置された別の基板の上面とが対向する、基板支持体と、を備え
前記複数のモジュールの各モジュールが、第1の端部、第2の端部、及び下面を有する筐体を備え、筐体の下面によって、前記基板キャリアを支持するとともに、前記複数のモジュールのうちの最初のモジュールから中間モジュールを経て最終のモジュールまで、前記複数のモジュールを通って前記基板キャリアが直動するための経路を提供し、
前記複数のモジュールのうちの少なくとも1つのモジュールが、
前記筐体の側面に配置されて、前記筐体内へ放射熱を取込可能な窓と、
前記筐体の前記側面に結合されて、前記窓を通って前記筐体内へ放射熱を提供する加熱ランプと、
前記筐体の頂部近傍に配置されて、前記筐体内へプロセスガスを提供するガス入口と、
前記ガス入口とは反対側の前記筐体の底部に配置されて、前記筐体から前記プロセスガスを除去する排気口と
を備える、割り送り式インライン基板処理ツール。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261711493P | 2012-10-09 | 2012-10-09 | |
US61/711,493 | 2012-10-09 | ||
PCT/US2013/061404 WO2014058612A1 (en) | 2012-10-09 | 2013-09-24 | Indexed inline substrate processing tool |
US14/034,921 | 2013-09-24 | ||
US14/034,921 US9406538B2 (en) | 2012-10-09 | 2013-09-24 | Indexed inline substrate processing tool |
Publications (3)
Publication Number | Publication Date |
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JP2015533195A JP2015533195A (ja) | 2015-11-19 |
JP2015533195A5 JP2015533195A5 (ja) | 2016-11-10 |
JP6285446B2 true JP6285446B2 (ja) | 2018-02-28 |
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JP2015535693A Expired - Fee Related JP6285446B2 (ja) | 2012-10-09 | 2013-09-24 | 割り送り式インライン基板処理ツール |
Country Status (6)
Country | Link |
---|---|
US (1) | US9406538B2 (ja) |
JP (1) | JP6285446B2 (ja) |
KR (1) | KR101782874B1 (ja) |
CN (1) | CN104704624B (ja) |
TW (1) | TWI592513B (ja) |
WO (1) | WO2014058612A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016043965A1 (en) * | 2014-09-19 | 2016-03-24 | Applied Materials, Inc. | Parallel plate inline substrate processing tool |
JP7039151B2 (ja) * | 2018-06-08 | 2022-03-22 | 東芝三菱電機産業システム株式会社 | 成膜装置 |
KR20220010559A (ko) * | 2019-05-24 | 2022-01-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 열 처리하기 위한 장치, 기판 프로세싱 시스템, 및 기판을 프로세싱하기 위한 방법 |
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-
2013
- 2013-09-24 CN CN201380051490.1A patent/CN104704624B/zh active Active
- 2013-09-24 WO PCT/US2013/061404 patent/WO2014058612A1/en active Application Filing
- 2013-09-24 KR KR1020157012155A patent/KR101782874B1/ko active IP Right Grant
- 2013-09-24 JP JP2015535693A patent/JP6285446B2/ja not_active Expired - Fee Related
- 2013-09-24 US US14/034,921 patent/US9406538B2/en active Active
- 2013-09-26 TW TW102134793A patent/TWI592513B/zh active
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KR20150066582A (ko) | 2015-06-16 |
CN104704624A (zh) | 2015-06-10 |
US9406538B2 (en) | 2016-08-02 |
TW201418517A (zh) | 2014-05-16 |
US20140099778A1 (en) | 2014-04-10 |
KR101782874B1 (ko) | 2017-09-28 |
TWI592513B (zh) | 2017-07-21 |
WO2014058612A1 (en) | 2014-04-17 |
CN104704624B (zh) | 2017-06-09 |
JP2015533195A (ja) | 2015-11-19 |
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