CN87104656A - 半导体器件的制造方法和系统 - Google Patents

半导体器件的制造方法和系统 Download PDF

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CN87104656A
CN87104656A CN87104656.3A CN87104656A CN87104656A CN 87104656 A CN87104656 A CN 87104656A CN 87104656 A CN87104656 A CN 87104656A CN 87104656 A CN87104656 A CN 87104656A
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山崎舜平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Abstract

本文示出了一种改进的半导体器件的制作系统和方法。在此系统中，借助ECR系统和CVD系统的联合可以避免有害的溅射效应。在用联合系统淀积之前，在反应室内可以在基片上预形成一个子层，在不接触大气的情况再传递到用联合系统进行淀积的另一个反应室，以使得这样形成的结有良好的特性。

Description

本发明涉及半导体器件的一种制造方法和系统，特别是涉及半导体器件的一种多反应室系统的制造工艺。
用单一的辉光放电激发反应气体的等离子CVD（化学汽相淀积）系统已是公知的。该工艺比常规的热CVD系统有显著的优越性，在常规热CVD系统中在比较低的温度下即可实现淀积工艺。而且，这样形成的淀积层包括作为复合中和剂的氢和卤素，可使淀积层得到改进了的PN、NI或PI结。
然而，这种辉光放电CVD系统的淀积速度是很低的，按商业实用价值观，还要把速度提高10～500倍。
另一方面，一种由ECR（电子迴旋共振）增强的CVD系统也是公知的，在此系统中淀积工艺是在低于1×10-2乇，例如1×10-2～1×10-5乇的气压下进行的。根据此系统，可以10～100埃/秒的速率来淀积5000埃～10微米厚的淀积层。然而，要淀积多层时，则要花费相当长的时间。
所以，本发明的目的在于提供一种制造半导体的方法和系统，制作出具有优质结的半导体器件。
本发明的另一个目的在于提供一种能进行大量生产的制作半导体的方法和系统
本发明的再一个目的是提供一种工艺时间短的制作半导体的方法和系统。
图1是一个ECR增强CVD系统的剖视图。
图2是本发明的一个实施例的剖视图。
根据本发明，非生产用的气体，如氩气被电子迴旋共振赋能。被激发的非生产用的气体可把它的一部分能转交给生产用的气体，并在一个辉光放电CVD系统内分解，这样可以将本征层无溅射效应地淀积在已形成在基片上的一个子层（杂质半导体层）之上。就是说，大大缓和了辉光放电由溅射效应引起的对基片的损伤的趋势。
淀积可以在多室系统内进行，用该系统可使基片不接触大气，依次地进行多层淀积。其结果可以防止对结的污染，避免结遭受低氧化和低氮化。
还有，把ECR系统与辉光放电CVD系统联合使用，可以实现高工作速度的淀积，并获得优质产品。
淀积是在低气压10-5～10-2乇下，最好是在10-4～10-3乇下进行，这种气压比已有技术所用的气压0.1～0.5乇低得多，低气压可以减少对下一步淀积工艺在反应室内残留下的剩余气体，这就可以简化包括多次淀积工序的制作工艺，避免在下一步淀积之前充分抽空反应室然后打开一个将反应室隔开的阀门的常规步骤。
作为生产用的气体可采用硅化物气体，诸如，SinH2n+1（n≥1），SiFn（n≥2），SiHnF4-n（1＜n＜4）或Si（CH3）nH4-n（n＝1，2，3），锗的化合物，诸如，GeH4，GeF4或GeHnF4-n（n＝1，2，3）或锡的化合物，诸如，SnCL4，SnF2或SnF4。
此外，可加入掺杂气体，诸如，B2H6，BF3或PH3作添加物，来制作杂质半导体层。
现在参照图1，表明了采用依本发明的一个系统的等离子增强CVD系统。反应室1在其垂直于附图纸面的两侧兼备一个进料室和一个卸料室（图中未示出），反应室与进料室及卸料室通过闸门阀相互连通。在进料室和卸料室之间，反应空间环绕以不锈钢和/或绝缘体制成的衬套31和31′，以使被激发的反应气体不扩展到结构的内壁，也不聚集使这样的淀积层脱皮的产物。衬套31是用五个基片夹持器10′形成的，并可拿开和安排在如图所示的反应室1之内，基片10被固定在每个夹持器10′的两侧。对于中间的反应室来说，卤素灯丝7用来照射衬套31，而夹持器10′上的基片是用红外灯照射的。衬套31′与衬套30一起形成及装配，构成密封，使三个衬套彼此嵌平。而且，在反应空间1的上下两侧配备了一对网状栅20和20′。用电源6对栅极20和20′施加一个13.56兆赫的交流电场，或在网状电极20和20′之间加一个直流电场，就能产生辉光放电。
在该反应室之上形成一个共振空间，大小与共振室2的内部空间一致，通过管道18将一种非生产用气体通入反应空间。用无激磁铁芯的线圈S和S′，一个围绕本实施例的共振空间的亥姆霍兹（探向）线圈5和5′，该共振空间被施加一个磁场。在共振室2的周围配置一个冷却系统12。而且，用微波振荡器3产生的微波通过隔离器4经过一个人造石英制作的窗口辐照到共振空间。氩气作为非生产用的气体被通入该空间并被激发。在此情况下，磁场的大小选取在875高斯。磁场的大小和微波的频率一般根据待激发的非生产用的气体分子的重量来确定。
按此方式，如此被激发的氩气被磁场收缩并在背景磁场下与微波共振。被激发的氩气通过抽取栅2′转到反应空间1。在栅极2和共振空间之间有一个缓冲空间30和多孔喷嘴23，通过该喷嘴将生产用的气体通入整个反应空间。生产用的气体是用被激发的非生产用的气体混合的，并从非生产气体接收能量而被激发。网状栅20的作用也是一个均化器，以防止被激发的气体倒流。当衬套是用绝缘体制作的情况下，用一对绝缘栅作均化器，并配备多个电极，以产生电子放电。
因此，电子和被激发的气体21下降到整个反应室。即使共振空间和基片表面之间有相当大的距离，来自共振气体的被激发态的气体仍然处于基片附近。当单独使用已有技术的迴旋共振时，上述的距离选取在大约5～15厘米，当共振空间与基片之间的一个短距离减少了被激发气体的能量损耗时，它就会使淀积层不平坦。
另外，为了使反应气体扩展到整个反应室1，并建立一个迴旋共振，共振空间和反应室间的压力例如选取在1×10-3～1×10-4乇，3×104乇。通过控制阀门12与涡轮泵14的配合来控制真空泵9的抽气速率，以实现对压力的调节。
实验例1
本实验例是为用上述系统制备一种非晶硅层而进行的
就是说，本实验例是在高40厘米，长和宽均为50厘米的反应室内进行的，在其内可形成一个高为30厘米，长和宽均为35厘米的反应空间。基片10安装在夹持器31上。当压力为3×10-4乇时，将氩气作为一种非生产用气体通过管道18，以200厘米3/分的速率通入到反应空间1，再通过管道16，以80厘米3/分的速率引入甲硅烷气体。除此之外，同时把用SiH4稀释的B2H6气体漏泄到百万分之0.1～百万分之10，如果需要，以制作一个大体上为本征的半导体。从电源6提供一个初始的40瓦的高频电能。再加一个频率为2.45千兆赫的，200～800瓦，最好是400瓦的微波。磁场大小选取875±100高斯。
基片10具有一个透明的导电层。用抽气系统11抽掉无用气体的期间，在基片10上淀积一层非单晶半导体层，例如，非晶硅半导体层，其基片温度为250℃。淀积速度为45埃/秒。该淀积速度比单用等离子CVD的淀积速度1.5埃/秒大30倍。
所得的没有掺杂的非晶硅层的电学特性如下，暗电导率：4×10-10西（门子）/厘米;光电导率：6×10-5西（门子）/厘米（AM：100毫瓦/厘米2）。该电导率与用等离子CVD淀积系统得到的参数相当。当用PIN结制作太阳电池时，I层是依此实验例的方法制备的，可以预期，其转换效率也是高的。
实验例2
本实验例是为说明淀积一个P型非单晶半导体SiXC1-X（0＜X＜1）而进行的。本实验例的制备条件与前一个实验例大致相同，下面仅对不同之处加以阐明。
把作为生产用的气体，一种由H2Si（CH3）2∶SiH4＝1∶7的混合反应气体和B2H6∶SiH4＝5∶1000的混合气体通入到反应空间1。微波振荡器3的输出功率为300瓦。在压力为3×10-4托下，将基片温度保持在180℃。结果，得到的光学能带宽度为2.4电子伏特，暗电导率为3×106西（门子）/厘米。
实验例3
本实验例是为制备N型微晶半导体而做的。在本实验例中，只给出与实验例1不同之处的说明。
也就是说，通入的生产用气体为SiH4∶H2＝1∶5～1∶40，最好为1∶30，压力为3×10-4乇。微波振荡器的输出功率为400瓦。基片温度为250℃。结果，得到的光学能带宽度为1.65电子伏特，电导率为50西（门子）/厘米
因为既使微波功率高，ECR系统也没有溅射效应，所以平均晶粒尺寸趋于增大，使淀积层变得更加多晶化，使得当速度仅为辉光放电等离子CVD系统的50%时，晶化速率就增加到70%。另外，既使反应气体SiH4∶H2＝1∶5～1∶40，根据本实验例所形成的半导体层具有精细制备的微晶结构。
实验例4
在本实施例中，淀积一层SiO2-X（0≤X＜2）或Si3N4-X（0≤X＜4）层。与实验例1相同的说明不加赘述。
氧气和氮气与氩气一起被通入共振空间。把SiH4通过管道16也通入到反应室1，通入的氧气与通入的SiH4之比，或氮气与SiH4之比决定了X之值。当希望X＝0，对应于SiO2或Si3N4时，通入与SiH4等量的氧气或氮气。
现在参照图2，给出了本发明的实施例。本实施例的一个目的在于用一个多反应室系统制作具有PIN结或NIP结的半导体层。
多室系统由五个部分构成。第一部分Ⅰ是送料室1′-1。第二部分Ⅱ是第二室1′-2，如专用于淀积P型层。第三部分Ⅲ是第三室1′-3，如专用于淀积Ⅰ型层。第四部分Ⅳ是第四室1′-4，例如专用于淀积N型层。第五部分Ⅴ是一个卸料室1′-5。欲制作NIP结，将第二部分同第四部分对换。
每一个反应室都配备一个掺杂系统13-1，13-2，……或13-5和一个备有涡轮分子泵14-1，14-2，……或14-5的抽气系统11和真空泵9-1，9-2，……或9-5。中间的三个反应室各自由反应空间1-2，1-3或1-4形成，第二部分Ⅱ是一个光CVD系统，它备有一个水银灯40和卤素灯，安装在与附图纸面垂直的、反应室中间的两侧。第三部分和第四部分是ECR增强CVD系统，每个系统结构均与图1相同，并备有一个亥姆霍兹（探向）线圈5-3或5-4和一个微波振荡器（图中未示出），虽然氩气被用作共振气体，但也可用氢气。对于使用氢气的情况，磁场大小必须按与分子重量成反比地增大。
每相毗邻的反应室之间安装一个闸门阀25-2，25-3……或25-5。通过已打开的阀门，可将基片夹持器31从一个反应室传递到另一个反应室。在进行淀积时，阀门当然是保持关闭的。然而在淀积期间，送入阀门25-1和取出阀门25-6是打开的，以便把一个装在夹持器上的新基片从送入阀门供给送料室1′-1，并把已在反应室1′-2，1′-3和1′-4淀积后的基片取出。
反应空间1-3和1-4的淀积工艺，按实验例1、实验例2或实验例3进行。在反应空间1-2、1-3和1-4完成淀积之后，暂停供应生产用气体和微波辐射源，当阀门25-1和25-6关闭时，用传递装置（图中未示出），把基片夹持器31传递给毗邻的反应室。在不抽取该反应室内部气体的情况下可很快地实现。共振气体氩气可以连续，也可以不连续地通入。在完成传递之后，关闭阀门25-2，至25-5，分别在反应室1′-2，1′-3和1′-4内进行下一步淀积工艺。只有牢记上述工艺才能容易理解到：如此淀积的半导体对P-I结和I-N结的沾污和氧化比用先有技术辉光放电等离子CVD系统形成的半导体的都小。
如此形成的太阳电池的转换效率为12.9%;开路电压为0.92伏;短路电流密度为18.4毫安/厘米2;有效面积为1.05厘米2。之所以有这样高的转换效率是因为在ECR CVD系统内没有发生反应气体的溅射。再有，高转换效率的另一个原因，可以认为淀积期间反应室内的气压是1×10-3～1×10-5乇，3×10-4乇，低于辉光放电等离子系统的气压，并且在淀积之后能用涡轮泵在只用此辉光放电CVD系统所需时间小100倍的极短时间内抽出杂质气体和反应气体。
在本实施例中，闸门阀25-3和25-4可以从系统中省掉。在这种情况下，在两个反应室之间形成一个隔离区，以改进系统的生产率。毗邻的反应室基本上被夹持器31侧壁所隔开。
按照这个改进所制作的太阳电池的转换效率为12.6%;开路电压为0.93伏;短路电流密度为18.3毫安/厘米2;填充系数为0.81;其面积为1.05厘米2。除节省成本之外，还可省去两个阀门25-3和25-4，并可在5分钟之内把夹持器传递给毗邻的反应室，增加了通过量。
再有，依本实施例，用放大倍数为100的显微镜，在暗场中只观察到1～3个φ0.1～0.01微米的针孔，它是用辉光放电法淀积的层中观察到的1/10。
将本发明用于薄膜型绝缘栅FET工艺也是很方便的。在此情况下，第二部分Ⅱ专用于形成半导体层的反应空间。第三部分Ⅲ专用做形成氮化硅层的反应空间。第四部分Ⅳ专用做形成二氧化硅层的反应空间，各步形成工艺大致与前述工艺相同。
尽管，对几个实施例做了说明，但本发明只应受所附的权利要求所限定，而不应受实际举例所限制。下面是对本发明的改进和变化的例子。
辉光放电CVD系统可用来做为本实施例中的第一部分Ⅰ而不是光增强CVD系统。
本发明还可应用到光发射MIS，超晶格光发射器件等等。另外，将本发明用于其它半导体激光器或光集成电路器件也是很有利的。
虽然本实施例中的ECR系统备有一个辉光放电系统，但也可以把一个光增强系统与ECR系统配合使用。在此情况下，一个波长为100毫微米～400毫微米的准分子激光器、氩激光器、氮激光器等等可用做发光的光源。
可用乙硅烷或甲硅烷与SiF2的混合物做生产用的气体，以期更进一步地改进淀积速度。
基片用硅半导体、玻璃、人造树脂、不锈钢或在其上可制备电极的其它材料来做。
SiXGe1-X（0＜X＜1）、SiXSn1-X（0＜X＜1）、CXGe1-X（0＜X＜1）或它们本征的或掺杂的半导体皆可用做待淀积的半导体
有夹持多个基片能力的、如图1所示的基片夹持器可用于如图2所示的多反应室系统。

Claims (13)

1、用化学汽相反应制造半导体器件的方法，其特征在于：该方法包括下列步骤：
引入一生产气体到一包括有一置于磁场下的和接收微波的共振空间，以及一与共振空间互通的和在其内有一衬底的反应空间的真空室；
使所述的生产气体置于所说磁场中；
对所述的生产气体施加一微波，以激励所述的生产气体，以及在磁场存在的条件下给通过分解从所述的生产气体中产生的带电粒子供能；
借助于赋能的生产气体的能量，实现硅和碳的化学汽相反应，随后在安置在所述的真空室中的一衬底上淀积SixC1-x(0＜X＜1)半导体层。
2、根据权利要求1的方法其特征在于还包括引入一反应气体到所述的反应空间，所述的生产气体与由微波激励过的所述生产气体混合，并由所述被激励的生产气体的能量赋能。
3、根据权利要求2的方法其特征在于所述的反应气体含有甲基硅烷。
4、根据权利要求2的方法其特征在于所述的反应气体是硅化物气体和碳化物气体的混合物。
5、根据权利要求2的方法其特征在于所述的反应气体是硅烷和甲基硅烷的混合物。
6、根据权利要求3的方法其特征在于所述的甲基硅烷是二甲基硅烷。
7、根据权利要求1的方法其特征在于供能步骤是在电子回旋共振内实施。
8、根据权利要求4的方法其特征在于通过引入作为一掺杂气体的硼化合物气体与所述的反应气体一起，以将所述的碳化硅半导体形成为P型半导体。
9、根据权利要求5的方法其特征在于所述的反应气体包括磷化合物气体作为一掺杂气体。
10、根据权利要求8的方法其特征在于所述的硼化合物气体是用硅烷气体稀释了的乙硼烷气体。
11、用化学汽相反应制造半导体器件的方法其特征在于包括的步骤有：
引入一生产气体到一真空室;
将所述的生产气体置于磁场中;
对所说的生产气体施加一微波，以激励所述生产气体和在磁场存在的条件下，给通过分解从所述的生产气体所产生带电粒子供能，以及供助于被供能的生产气体的能量实现硅和锗的化学汽相反应，随后，在安置在所述真空室的一衬底上淀积SixGe1-x（0＜X＜1）半导体层。
12、用化学汽相反应制造半导体器件的方法其特征在于包括的步骤有;
引入一生产气体到一真空室;
将所述生产气体置于磁场中;
对所述生产气体施加一微波，以激励所述生产气体和在磁场存在的条件下，给通过分解从所述的生产气体所产生带电粒子供能，以及
借助于被供能的生产气体的能量，实现硅和锡的化学汽相反应，随后，在安置在所述真空室内的一衬底上淀积SixSn1-x（0＜X＜1）半导体层。
13、用化学汽相反应制造半导体器件的方法其特征在于包括的步骤有：
引入一生产气体到一真空室;
将所述的生产气体置于磁场中;
对所述的生产气体施加一微波，以激励所述生产气体和在磁场存在的条件下，给通过分解从所述的生产气体所产生带电粒子供能，以及
借助于被供能的生产气体的能量，实现碳和锗的化学汽相反应，随后，在安置在所述的真空室内的一衬底上淀积CxGe1-x（0＜X＜1）半导体层。
CN87104656.3A 1985-11-12 1987-07-04 半导体器件的制造方法和系统 Expired CN1005881B (zh)

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EP0224360A2 (en) 1987-06-03
KR910003170B1 (ko) 1991-05-20
KR870005438A (ko) 1987-06-08
US4808553A (en) 1989-02-28
EP0224360B1 (en) 1992-04-08
CN1029442C (zh) 1995-08-02
KR910003171B1 (ko) 1991-05-20
US4808554A (en) 1989-02-28
KR910003169B1 (ko) 1991-05-20
CN1005881B (zh) 1989-11-22
EP0457415A1 (en) 1991-11-21
EP0224360A3 (en) 1987-08-19
CN1007565B (zh) 1990-04-11
KR920003832A (ko) 1992-02-29
CN86107683A (zh) 1987-05-20
CN87104657A (zh) 1987-12-16
DE3684759D1 (de) 1992-05-14
KR920003833A (ko) 1992-02-29

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