JPH038102B2 - - Google Patents
Info
- Publication number
- JPH038102B2 JPH038102B2 JP58052264A JP5226483A JPH038102B2 JP H038102 B2 JPH038102 B2 JP H038102B2 JP 58052264 A JP58052264 A JP 58052264A JP 5226483 A JP5226483 A JP 5226483A JP H038102 B2 JPH038102 B2 JP H038102B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor
- reactive gas
- plasma
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007789 gas Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000003085 diluting agent Substances 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 238000007865 diluting Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 11
- 229910000077 silane Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 230000007704 transition Effects 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000036964 tight binding Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Light Receiving Elements (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052264A JPS58175824A (ja) | 1983-03-28 | 1983-03-28 | プラズマ気相反応用装置 |
| JP3333924A JP2540684B2 (ja) | 1983-03-28 | 1991-11-22 | 珪素を主成分とする半導体被膜の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052264A JPS58175824A (ja) | 1983-03-28 | 1983-03-28 | プラズマ気相反応用装置 |
| JP3333924A JP2540684B2 (ja) | 1983-03-28 | 1991-11-22 | 珪素を主成分とする半導体被膜の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55147304A Division JPS5771127A (en) | 1980-10-21 | 1980-10-21 | Manufacture of semiamorphous semiconductor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3333924A Division JP2540684B2 (ja) | 1983-03-28 | 1991-11-22 | 珪素を主成分とする半導体被膜の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58175824A JPS58175824A (ja) | 1983-10-15 |
| JPH038102B2 true JPH038102B2 (zh) | 1991-02-05 |
Family
ID=26392866
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58052264A Granted JPS58175824A (ja) | 1983-03-28 | 1983-03-28 | プラズマ気相反応用装置 |
| JP3333924A Expired - Lifetime JP2540684B2 (ja) | 1983-03-28 | 1991-11-22 | 珪素を主成分とする半導体被膜の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3333924A Expired - Lifetime JP2540684B2 (ja) | 1983-03-28 | 1991-11-22 | 珪素を主成分とする半導体被膜の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS58175824A (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58175824A (ja) * | 1983-03-28 | 1983-10-15 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応用装置 |
| EP0346055B1 (en) * | 1988-06-06 | 1995-04-19 | Research Development Corporation Of Japan | Method for causing plasma reaction under atmospheric pressure |
| WO2009093459A1 (ja) * | 2008-01-25 | 2009-07-30 | Mitsui Engineering & Shipbuilding Co., Ltd. | 原子層成長装置および薄膜形成方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52113164A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Removal of organic agent |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5743891Y2 (zh) * | 1978-11-30 | 1982-09-28 | ||
| JPS5771127A (en) * | 1980-10-21 | 1982-05-01 | Semiconductor Energy Lab Co Ltd | Manufacture of semiamorphous semiconductor |
| JPS58175824A (ja) * | 1983-03-28 | 1983-10-15 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応用装置 |
-
1983
- 1983-03-28 JP JP58052264A patent/JPS58175824A/ja active Granted
-
1991
- 1991-11-22 JP JP3333924A patent/JP2540684B2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52113164A (en) * | 1976-03-19 | 1977-09-22 | Hitachi Ltd | Removal of organic agent |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0620952A (ja) | 1994-01-28 |
| JP2540684B2 (ja) | 1996-10-09 |
| JPS58175824A (ja) | 1983-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2965094B2 (ja) | 堆積膜形成方法 | |
| US4409605A (en) | Amorphous semiconductors equivalent to crystalline semiconductors | |
| JPH0253941B2 (zh) | ||
| KR19990045662A (ko) | 미세결정 실리콘막, 광전지 소자, 및 그 제조 방법 | |
| US4760008A (en) | Electrophotographic photosensitive members and methods for manufacturing the same using microwave radiation in magnetic field | |
| JPS6349751B2 (zh) | ||
| US4520380A (en) | Amorphous semiconductors equivalent to crystalline semiconductors | |
| JPH0653137A (ja) | 水素化アモルファスシリコン膜の形成方法 | |
| US4839312A (en) | Fluorinated precursors from which to fabricate amorphous semiconductor material | |
| JPH0325929B2 (zh) | ||
| JPH038102B2 (zh) | ||
| JP2626701B2 (ja) | Ｍｉｓ型電界効果半導体装置 | |
| JPH0313737B2 (zh) | ||
| JP4346700B2 (ja) | 光電変換装置の作製方法 | |
| JP3201540B2 (ja) | 太陽電池及びその製造方法 | |
| JP3491977B2 (ja) | 多結晶シリコン太陽電池 | |
| JP2004296599A (ja) | 薄膜多結晶シリコン太陽電池及びその製造方法 | |
| JP3100668B2 (ja) | 光起電力素子の製造方法 | |
| JP2675174B2 (ja) | 太陽電池の製造方法 | |
| JPH04373122A (ja) | 薄膜半導体の製造法 | |
| JP3363504B2 (ja) | 光起電力素子の製造方法 | |
| JPS634356B2 (zh) | ||
| JPH04212473A (ja) | 多結晶半導体膜及びその膜を用いた光起電力装置 | |
| JP3984761B2 (ja) | 光起電力素子、その製造方法、およびその製造装置 | |
| JP2728874B2 (ja) | 半導体装置の製法 |