KR860006829A - 반도체의 기상 성장방법 및 그 장치 - Google Patents
반도체의 기상 성장방법 및 그 장치 Download PDFInfo
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- KR860006829A KR860006829A KR1019860001177A KR860001177A KR860006829A KR 860006829 A KR860006829 A KR 860006829A KR 1019860001177 A KR1019860001177 A KR 1019860001177A KR 860001177 A KR860001177 A KR 860001177A KR 860006829 A KR860006829 A KR 860006829A
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- Prior art keywords
- wafer
- semiconductor
- gas
- phase growth
- reaction vessel
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims 17
- 238000001947 vapour-phase growth Methods 0.000 title claims 7
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 claims 22
- 239000007789 gas Substances 0.000 claims 12
- 239000012495 reaction gas Substances 0.000 claims 3
- 239000002994 raw material Substances 0.000 claims 2
- 238000007599 discharging Methods 0.000 claims 1
- 238000010574 gas phase reaction Methods 0.000 claims 1
- 239000007792 gaseous phase Substances 0.000 claims 1
- 230000005484 gravity Effects 0.000 claims 1
- 229910000039 hydrogen halide Inorganic materials 0.000 claims 1
- 239000012433 hydrogen halide Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000007723 transport mechanism Effects 0.000 claims 1
- 239000002912 waste gas Substances 0.000 claims 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/057—Gas flow control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예를 나타낸 단면 설명도. 제2도는 본 발명의 1실시예에서 사용한 웨이퍼 지지법의 개략도. 제3도는 본 발명의 다른 실시예를 나타낸 단면 설명도.
* 도면의 주요부분에 대한 부호의 설명
1: 웨이퍼, 2: 홀더, 3: 가열체, 31: 상부버퍼, 32: 하부버퍼, 4: 공급노즐, 5: 배출노즐, 6: 반응용기, 7: 벨자아베이스, 8: 로체베이스, 9: 가열원, 10: 지지구, 11: 회전기구, 12: 축, 13: 가열체지지대, 14: 지지대, 15: 가스공급노즐, 16: 배기구.
Claims (8)
- 주면을 대략 수평이 되게하고 또한 대략 일정한 간격으로 배치되고 주면의 대략 중앙을 축으로 하여 수평면내에서 회전하는 상태로 유지된 다수매의 반도체 웨이퍼를, 그 웨이퍼 전부를 거의 실질적으로 둘러싼 통 형상의 가열체 내부에 수납하고, 상기 가열체를 외기와 격리하기 위한 반응 용기내에 설치하고, 그 가열체를 반응용기밖에 설치된 가열원에 의하여 가열하고, 상기 웨이퍼 주변의 한쪽의 측면으로 부터 각각의 웨이퍼 주면에 대럭 평행으로 반응가스를 공급하고, 대략 공급구에 대응시킨 다른쪽의 측면으로부터 이들의 반응가스를 배기함으로써 상기 반도체 웨이퍼를 회전시키면서 그 위에 박막을 기상성장 시키는 반도체의 기상성장 방법.
- 제1항에 있어서, 반응가스의 복수의 공급구멍에 대향하는 위치에 복수의 배기구멍이 있으며, 각웨이퍼 주면위를 반응가스가 평행으로 흐르는 것을 특징으로 하는 반도체 기상성장 방법.
- 반응용기내에 다수매의 반도체 웨이퍼를 상기 반도체 웨이퍼 전체를 포함하여 고온으로 가열하고 원료가스를 공급하는 다수의 구멍 또는 슬리트를 가지며 또한 내관의 원료가스의 흐름 방향과 외관의 원료가스의 흐름 방향이 서로 반대 방향이 되는 2중관 노즐을 사용하여 내관으로부터 상기 웨이퍼에 원료가스를 공급하여 에피택셜층을 형성하는 반도체의 에피택셜 성장방법.
- 제3항에 있어서, 반도체 웨이퍼를 반응용기내의 가열체내에 배치하고, 2중관 노즐에 대응시켜서 배기 노즐에는 2중관 노즐의 내관에 있어서의 각 원료가스 공급구멸에 대향하여 다수의 배기 구멍이 설치되고 내관의 공급 구멍으로부터 분출하는 원료가스가 각 웨이퍼 위를 수평으로 흐르며 배기 구멍으로 흡기되는 것을 특징으로 하는 반도체의 기상성장 방법.
- 제3항에 있어서, 원료가스에는 할로겐화 수소가 소량 첨가되는 것을 특징으로 하는 반도체의 기상성장 방법.
- 반도체 웨이퍼의 주면을 대략 수평으로 하고, 또한 대략 일정한 간격으로 적층 상태로 다수매 유지하고 그 웨이퍼의 대략 중심에서 또한 중력 방향을 회전의 축으로 하여 웨이퍼를 회전시키는 수단과, 상기 다수매의 웨이퍼 전체를 실질적으로 둘러싼 가열체와 웨이퍼 주변의 한쪽의 측면으로부터 표면에 거의 평행으로 반응가스를 공급하는 수단과, 각 웨이퍼 표면에서 기상 반응을 끝낸 폐가스를 다른쪽의 측면으로부터 신속하게 배출하는 수단과, 상기 각 웨이퍼 및 가열체, 가스 공급수단, 가스배출수단을 포함하여 외기와 격리하기 위한 반응용기와 그 반응용기 밖에 설치한 상기 가열체를 가열하는 가열수단으로서 이루어진 기상성장 장치.
- 제6항에 있어서, 반응용기의 중심축 방향의 한쪽단부에 접속되고 외기와 전실과의 사이의 반도체 웨이퍼의 반송기구와 상기 반응용기와 상기 전실을 개폐 조작에 의하여 접속 또는 분리하는 격리 플레이트를 가지는 기상성장 장치.
- 제6항에 있어서, 가스공급수단은 그 온도가 반도체 웨이퍼보다 낮은 온도로 유지되는 수단을 가지는 기상성장 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30459 | 1985-02-20 | ||
JP60030459A JPS61191015A (ja) | 1985-02-20 | 1985-02-20 | 半導体の気相成長方法及びその装置 |
JP?60-30459 | 1985-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860006829A true KR860006829A (ko) | 1986-09-15 |
KR940009995B1 KR940009995B1 (ko) | 1994-10-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019860001177A KR940009995B1 (ko) | 1985-02-20 | 1986-02-20 | 반도체의 기상 성장방법및 그 장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US4745088A (ko) |
JP (1) | JPS61191015A (ko) |
KR (1) | KR940009995B1 (ko) |
Families Citing this family (122)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JPH0752718B2 (ja) | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | 薄膜形成方法 |
US6786997B1 (en) | 1984-11-26 | 2004-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing apparatus |
US6113701A (en) | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US5246536A (en) * | 1986-09-08 | 1993-09-21 | Research Development Corporation Of Japan | Method for growing single crystal thin films of element semiconductor |
US5871811A (en) * | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US5198034A (en) * | 1987-03-31 | 1993-03-30 | Epsilon Technology, Inc. | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
US4997677A (en) * | 1987-08-31 | 1991-03-05 | Massachusetts Institute Of Technology | Vapor phase reactor for making multilayer structures |
DE3885833T2 (de) * | 1987-09-22 | 1994-03-24 | Nec Corp | Chemischer Dampfabscheidungsapparat für die Herstellung von hochqualitativen epitaktischen Schichten mit gleichmässiger Dichte. |
US4963423A (en) * | 1987-10-08 | 1990-10-16 | Anelva Corporation | Method for forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means |
KR960014434B1 (ko) * | 1987-12-09 | 1996-10-15 | 후세 노보루 | 플라즈마 처리장치 |
US5036022A (en) * | 1988-07-05 | 1991-07-30 | International Business Machines Corporation | Metal organic vapor phase epitaxial growth of group III-V semiconductor materials |
WO1990010092A1 (en) * | 1989-02-24 | 1990-09-07 | Massachusetts Institute Of Technology | A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition |
JPH0795546B2 (ja) * | 1989-03-31 | 1995-10-11 | 工業技術院長 | シリコン表面の処理方法 |
US5188987A (en) * | 1989-04-10 | 1993-02-23 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device using a polishing step prior to a selective vapor growth step |
US5129360A (en) * | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
US5044943A (en) * | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
JP2998903B2 (ja) * | 1990-11-14 | 2000-01-17 | 東京エレクトロン株式会社 | 熱処理装置 |
JP2839720B2 (ja) * | 1990-12-19 | 1998-12-16 | 株式会社東芝 | 熱処理装置 |
US5318633A (en) * | 1991-03-07 | 1994-06-07 | Tokyo Electron Sagami Limited | Heat treating apparatus |
JP2819073B2 (ja) * | 1991-04-25 | 1998-10-30 | 東京エレクトロン株式会社 | ドープド薄膜の成膜方法 |
US5614257A (en) * | 1991-08-09 | 1997-03-25 | Applied Materials, Inc | Low temperature, high pressure silicon deposition method |
JP3121131B2 (ja) * | 1991-08-09 | 2000-12-25 | アプライド マテリアルズ インコーポレイテッド | 低温高圧のシリコン蒸着方法 |
US5695819A (en) * | 1991-08-09 | 1997-12-09 | Applied Materials, Inc. | Method of enhancing step coverage of polysilicon deposits |
JPH05209279A (ja) * | 1991-10-29 | 1993-08-20 | Canon Inc | 金属膜形成装置および金属膜形成法 |
US5198071A (en) * | 1991-11-25 | 1993-03-30 | Applied Materials, Inc. | Process for inhibiting slip and microcracking while forming epitaxial layer on semiconductor wafer |
US5461214A (en) * | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
TW242196B (ko) * | 1992-12-03 | 1995-03-01 | Saint Gdbain Norton Ind Ceramics Corp | |
JP3292540B2 (ja) * | 1993-03-03 | 2002-06-17 | 東京エレクトロン株式会社 | 熱処理装置 |
JP3190165B2 (ja) * | 1993-04-13 | 2001-07-23 | 東京エレクトロン株式会社 | 縦型熱処理装置及び熱処理方法 |
JP3024449B2 (ja) * | 1993-07-24 | 2000-03-21 | ヤマハ株式会社 | 縦型熱処理炉及び熱処理方法 |
JPH0786174A (ja) * | 1993-09-16 | 1995-03-31 | Tokyo Electron Ltd | 成膜装置 |
JPH0786173A (ja) * | 1993-09-16 | 1995-03-31 | Tokyo Electron Ltd | 成膜方法 |
JP3042335B2 (ja) * | 1994-10-25 | 2000-05-15 | 信越半導体株式会社 | 気相成長方法及びその装置 |
JPH09139352A (ja) * | 1995-11-15 | 1997-05-27 | Nec Corp | 縦型炉用ウェーハボート |
JP3971810B2 (ja) * | 1995-11-30 | 2007-09-05 | 三星電子株式会社 | 縦型拡散炉 |
US5781693A (en) * | 1996-07-24 | 1998-07-14 | Applied Materials, Inc. | Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween |
US5879458A (en) * | 1996-09-13 | 1999-03-09 | Semifab Incorporated | Molecular contamination control system |
US5904478A (en) * | 1997-03-07 | 1999-05-18 | Semitool, Inc. | Semiconductor processing furnace heating subassembly |
US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
DE69727658T2 (de) * | 1997-04-22 | 2005-04-28 | Imec Vzw | Kontinuierlicher Ofen mit hohem Durchsatz für Diffusionsbehandlung mit verschiedenen Diffusionsquellen |
US6117266A (en) * | 1997-12-19 | 2000-09-12 | Interuniversifair Micro-Elektronica Cenirum (Imec Vzw) | Furnace for continuous, high throughput diffusion processes from various diffusion sources |
JP2973971B2 (ja) | 1997-06-05 | 1999-11-08 | 日本電気株式会社 | 熱処理装置及び薄膜の形成方法 |
US6352593B1 (en) * | 1997-08-11 | 2002-03-05 | Torrex Equipment Corp. | Mini-batch process chamber |
US6780464B2 (en) | 1997-08-11 | 2004-08-24 | Torrex Equipment | Thermal gradient enhanced CVD deposition at low pressure |
US7393561B2 (en) * | 1997-08-11 | 2008-07-01 | Applied Materials, Inc. | Method and apparatus for layer by layer deposition of thin films |
US6167837B1 (en) | 1998-01-15 | 2001-01-02 | Torrex Equipment Corp. | Apparatus and method for plasma enhanced chemical vapor deposition (PECVD) in a single wafer reactor |
US6352594B2 (en) * | 1997-08-11 | 2002-03-05 | Torrex | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
US20050188923A1 (en) * | 1997-08-11 | 2005-09-01 | Cook Robert C. | Substrate carrier for parallel wafer processing reactor |
US20030049372A1 (en) * | 1997-08-11 | 2003-03-13 | Cook Robert C. | High rate deposition at low pressures in a small batch reactor |
WO1999036588A1 (en) * | 1998-01-15 | 1999-07-22 | Torrex Equipment Corporation | Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors |
KR100652909B1 (ko) * | 1998-03-06 | 2006-12-01 | 에이에스엠 아메리카, 인코포레이티드 | 하이 스텝 커버리지를 갖는 실리콘 증착 방법 |
US6310328B1 (en) * | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
JP2000183346A (ja) | 1998-12-15 | 2000-06-30 | Toshiba Corp | 半導体装置及びその製造方法 |
US6475284B1 (en) * | 1999-09-20 | 2002-11-05 | Moore Epitaxial, Inc. | Gas dispersion head |
US6692209B1 (en) * | 1999-11-19 | 2004-02-17 | Litton Systems, Inc. | Method and system for manufacturing a photocathode |
US6666924B1 (en) | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
US6564810B1 (en) | 2000-03-28 | 2003-05-20 | Asm America | Cleaning of semiconductor processing chambers |
KR100560867B1 (ko) * | 2000-05-02 | 2006-03-13 | 동경 엘렉트론 주식회사 | 산화방법 및 산화시스템 |
JP2001351871A (ja) * | 2000-06-09 | 2001-12-21 | Asm Japan Kk | 半導体製造装置 |
JP3929261B2 (ja) * | 2000-09-25 | 2007-06-13 | 株式会社日立国際電気 | 基板処理装置および基板処理方法 |
US20020127763A1 (en) * | 2000-12-28 | 2002-09-12 | Mohamed Arafa | Sidewall spacers and methods of making same |
EP1421607A2 (en) | 2001-02-12 | 2004-05-26 | ASM America, Inc. | Improved process for deposition of semiconductor films |
US7026219B2 (en) * | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US6793966B2 (en) * | 2001-09-10 | 2004-09-21 | Howmet Research Corporation | Chemical vapor deposition apparatus and method |
JP3984820B2 (ja) * | 2001-11-16 | 2007-10-03 | 株式会社神戸製鋼所 | 縦型減圧cvd装置 |
US20030111013A1 (en) * | 2001-12-19 | 2003-06-19 | Oosterlaken Theodorus Gerardus Maria | Method for the deposition of silicon germanium layers |
JP4158386B2 (ja) * | 2002-02-28 | 2008-10-01 | 東京エレクトロン株式会社 | 冷却装置及びこれを用いた熱処理装置 |
AU2003249030A1 (en) * | 2002-07-15 | 2004-02-02 | Aviza Technology, Inc. | Servomotor control system and method in a semiconductor manufacturing environment |
US7186630B2 (en) * | 2002-08-14 | 2007-03-06 | Asm America, Inc. | Deposition of amorphous silicon-containing films |
US6899145B2 (en) * | 2003-03-20 | 2005-05-31 | Asm America, Inc. | Front opening unified pod |
US7727588B2 (en) * | 2003-09-05 | 2010-06-01 | Yield Engineering Systems, Inc. | Apparatus for the efficient coating of substrates |
KR100765681B1 (ko) * | 2003-09-19 | 2007-10-12 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법 및 기판 처리 장치 |
JP4312204B2 (ja) * | 2003-11-27 | 2009-08-12 | 株式会社日立国際電気 | 基板処理装置、基板保持具、及び半導体装置の製造方法 |
JP4379585B2 (ja) * | 2003-12-17 | 2009-12-09 | 信越半導体株式会社 | 気相成長装置およびエピタキシャルウェーハの製造方法 |
KR100631972B1 (ko) * | 2005-02-28 | 2006-10-11 | 삼성전기주식회사 | 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법 |
US8211235B2 (en) * | 2005-03-04 | 2012-07-03 | Picosun Oy | Apparatuses and methods for deposition of material on surfaces |
US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
US20070084406A1 (en) * | 2005-10-13 | 2007-04-19 | Joseph Yudovsky | Reaction chamber with opposing pockets for gas injection and exhaust |
US20070084408A1 (en) * | 2005-10-13 | 2007-04-19 | Applied Materials, Inc. | Batch processing chamber with diffuser plate and injector assembly |
US7794667B2 (en) * | 2005-10-19 | 2010-09-14 | Moore Epitaxial, Inc. | Gas ring and method of processing substrates |
KR100706790B1 (ko) * | 2005-12-01 | 2007-04-12 | 삼성전자주식회사 | 산화 처리 장치 및 방법 |
US20070240644A1 (en) * | 2006-03-24 | 2007-10-18 | Hiroyuki Matsuura | Vertical plasma processing apparatus for semiconductor process |
US20080081112A1 (en) * | 2006-09-29 | 2008-04-03 | Paul Brabant | Batch reaction chamber employing separate zones for radiant heating and resistive heating |
JP4966800B2 (ja) * | 2007-09-26 | 2012-07-04 | 東京エレクトロン株式会社 | 熱処理装置 |
US7900579B2 (en) | 2007-09-26 | 2011-03-08 | Tokyo Electron Limited | Heat treatment method wherein the substrate holder is composed of two holder constituting bodies that move relative to each other |
KR101431197B1 (ko) * | 2008-01-24 | 2014-09-17 | 삼성전자주식회사 | 원자층 증착설비 및 그의 원자층 증착방법 |
KR101687836B1 (ko) * | 2008-03-13 | 2016-12-19 | 엔테그리스, 아이엔씨. | 관형 환경 제어 요소를 갖는 웨이퍼 용기 |
DE102008034330A1 (de) * | 2008-07-23 | 2010-01-28 | Ionbond Ag Olten | CVD-Reaktor zur Abscheidung von Schichten aus einem Reaktionsgasgemisch auf Werkstücken |
US8413815B2 (en) * | 2008-08-27 | 2013-04-09 | Gudeng Precision Industrial Co, Ltd | Wafer container with at least one purgeable supporting module having a long slot |
US8387799B2 (en) * | 2008-08-27 | 2013-03-05 | Gudeng Precision Industrial Co, Ltd. | Wafer container with purgeable supporting module |
US8413814B2 (en) * | 2008-08-27 | 2013-04-09 | Gudeng Precision Industrial Co, Ltd | Front opening unified pod disposed with purgeable supporting module |
US10655219B1 (en) * | 2009-04-14 | 2020-05-19 | Goodrich Corporation | Containment structure for creating composite structures |
JP5730496B2 (ja) * | 2009-05-01 | 2015-06-10 | 株式会社日立国際電気 | 熱処理装置、半導体デバイスの製造方法および基板処理方法 |
JP5632190B2 (ja) * | 2009-07-02 | 2014-11-26 | 株式会社日立国際電気 | 半導体装置の製造方法、基板の製造方法及び基板処理装置 |
KR101313262B1 (ko) * | 2010-07-12 | 2013-09-30 | 삼성전자주식회사 | 화학 기상 증착 장치 및 이를 이용한 반도체 에피 박막의 제조 방법 |
WO2012011423A1 (ja) * | 2010-07-22 | 2012-01-26 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
TW201217059A (en) * | 2010-10-21 | 2012-05-01 | Hon Hai Prec Ind Co Ltd | Coating apparatus and coating method |
DE102011000973A1 (de) * | 2011-02-28 | 2012-08-30 | Schott Solar Ag | Verfahren zur flächigen Gasphasenbehandlng von Halbleiterbauelementen |
KR20130008203A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 반도체 에피 박막 성장방법 및 이를 이용한 반도체 발광소자 제조방법 |
JP2013055201A (ja) * | 2011-09-02 | 2013-03-21 | Tokyo Electron Ltd | 熱処理装置 |
KR101402236B1 (ko) * | 2012-05-25 | 2014-06-02 | 국제엘렉트릭코리아 주식회사 | 노즐 유닛 및 그 노즐 유닛을 갖는 기판 처리 설비 |
CN104520975B (zh) * | 2012-07-30 | 2018-07-31 | 株式会社日立国际电气 | 衬底处理装置及半导体器件的制造方法 |
US20140144380A1 (en) * | 2012-11-28 | 2014-05-29 | Samsung Electronics Co., Ltd. | Gas supply pipes and chemical vapor deposition apparatus |
TWM453233U (zh) * | 2013-01-07 | 2013-05-11 | Gudeng Prec Ind Co Ltd | 應用於基板收納容器的氣體填充裝置 |
DE102013113687A1 (de) * | 2013-12-09 | 2015-06-11 | Otto-Von-Guericke-Universität Magdeburg | Beschichtungssystem |
KR102162366B1 (ko) * | 2014-01-21 | 2020-10-06 | 우범제 | 퓸 제거 장치 |
JP6320824B2 (ja) * | 2014-03-31 | 2018-05-09 | 株式会社東芝 | ガス供給管、およびガス処理装置 |
US9443730B2 (en) | 2014-07-18 | 2016-09-13 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9837271B2 (en) | 2014-07-18 | 2017-12-05 | Asm Ip Holding B.V. | Process for forming silicon-filled openings with a reduced occurrence of voids |
US9881826B2 (en) | 2014-10-24 | 2018-01-30 | Lam Research Corporation | Buffer station with single exit-flow direction |
JP6462161B2 (ja) * | 2016-02-09 | 2019-01-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
US10460932B2 (en) | 2017-03-31 | 2019-10-29 | Asm Ip Holding B.V. | Semiconductor device with amorphous silicon filled gaps and methods for forming |
CN109423627B (zh) * | 2017-08-31 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 圆盘类零件一次性全表面气相沉积炉 |
CN109423628B (zh) * | 2017-08-31 | 2021-02-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一次性全表面气相沉积支架、气相沉积炉及其沉积方法 |
US10790177B2 (en) * | 2017-11-14 | 2020-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems, devices, and methods for using a real time environment sensor in a FOUP |
US10903103B2 (en) * | 2018-01-22 | 2021-01-26 | Nanya Technology Corporation | Front opening unified pod |
CN111868897A (zh) * | 2018-03-28 | 2020-10-30 | 株式会社国际电气 | 基板处理装置、气体喷嘴及半导体装置的制造方法 |
CN113451183B (zh) * | 2020-06-03 | 2023-03-31 | 重庆康佳光电技术研究院有限公司 | 一种晶圆盒 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3224912A (en) * | 1962-07-13 | 1965-12-21 | Monsanto Co | Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds |
JPS4930319B1 (ko) * | 1969-08-29 | 1974-08-12 | ||
US4098223A (en) * | 1976-05-03 | 1978-07-04 | Siemens Aktiengesellschaft | Apparatus for heat treating semiconductor wafers |
US4062318A (en) * | 1976-11-19 | 1977-12-13 | Rca Corporation | Apparatus for chemical vapor deposition |
US4263872A (en) * | 1980-01-31 | 1981-04-28 | Rca Corporation | Radiation heated reactor for chemical vapor deposition on substrates |
US4401689A (en) * | 1980-01-31 | 1983-08-30 | Rca Corporation | Radiation heated reactor process for chemical vapor deposition on substrates |
US4339645A (en) * | 1980-07-03 | 1982-07-13 | Rca Corporation | RF Heating coil construction for stack of susceptors |
US4421786A (en) * | 1981-01-23 | 1983-12-20 | Western Electric Co. | Chemical vapor deposition reactor for silicon epitaxial processes |
JPS5875840A (ja) * | 1981-10-30 | 1983-05-07 | Fujitsu Ltd | 半導体用加熱処理炉 |
US4499853A (en) * | 1983-12-09 | 1985-02-19 | Rca Corporation | Distributor tube for CVD reactor |
US4574093A (en) * | 1983-12-30 | 1986-03-04 | At&T Bell Laboratories | Deposition technique |
US4588451A (en) * | 1984-04-27 | 1986-05-13 | Advanced Energy Fund Limited Partnership | Metal organic chemical vapor deposition of 111-v compounds on silicon |
-
1985
- 1985-02-20 JP JP60030459A patent/JPS61191015A/ja active Pending
-
1986
- 1986-02-19 US US06/830,713 patent/US4745088A/en not_active Expired - Lifetime
- 1986-02-20 KR KR1019860001177A patent/KR940009995B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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US4745088A (en) | 1988-05-17 |
JPS61191015A (ja) | 1986-08-25 |
KR940009995B1 (ko) | 1994-10-19 |
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